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ANALYSE DU FONCTIONNEMENT DES GENERATEURS D'IMPULSIONS EN PONT AVEC COMMANDE TRANSISTORISEE A EMETTEUR COMMUN DANS LES BRANCHES DU PONTOBNOVLENSKIJ PA; FERRONI VV.1977; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1977; VOL. 20; NO 6; PP. 15-20; BIBL. 4 REF.Article

EMITTER DIFFUSION-INDUCED STRESS EFFECT ON COMMON-EMITTER CURRENT GAIN OF SILICON PLANAR TRANSISTORSSTOJADINOVIC ND.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. K89-K93; BIBL. 9 REF.Article

GRAPHICAL TECHNIQUES FOR THE STUDY OF BIASING IN COMMON-EMITTER AMPLIFIERSSANDERS CW.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 1; PP. 67-80; BIBL. 1 REF.Article

MEASUREMENT OF LOW-CURRENT BETA OF A BIPOLAR JUNCTION TRANSISTORHART BL; MASSON VK.1979; J. PHYS. E; GBR; DA. 1979; VOL. 12; NO 7; PP. 574-576; BIBL. 6 REF.Article

OUTPUT INDUCTANCE OF AN EMITTER FOLLOWERCHOMA J JR.1979; IEE J. ELECTRON. CIRCUITS SYST.; GBR; DA. 1979; VOL. 3; NO 4; PP. 162-164; BIBL. 3 REF.Article

EFFECTS OF EMITTER DIFFUSION-INDUCED STRESSES ON THE COMMON-EMITTER CURRENT GAIN OF SILICON PLANAR TRANSISTORSSTOJADINOVIC ND; RISTIC SD.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K83-K88; BIBL. 23 REF.Article

CAN OSCILLATORS BE "COMMON". DOES IT MAKE SENSE TO CLASSIFY THEM IN THE SAME WAY AS AMPLIFIER CIRCUITS.1977; WIRELESS WORLD; G.B.; DA. 1977; VOL. 83; NO 1495; PP. 62-63Article

BI-POLAR JUNCTION TRANSISTOR CHARACTERISTICS IN THE AVALANCHE MODE IN COMMON EMITTER CONFIGURATION.AHARONI H.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 4; PP. 21-29; BIBL. 8 REF.Article

CARACTERISTIQUE D'UN TRANSISTOR DANS LES CONDITIONS D'UNE PRESSION UNIFORME SUR UNE PARTIE DE LA SURFACE DE L'EMETTEURRISTICH SD; TSVEKICH V.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 8; PP. 1633-1639; BIBL. 7 REF.Article

INTERDEPENDANCE DES CARACTERISTIQUES COURANT-TENSION DES TRANSISTORS AU SILICIUM POUR UN COURANT DE BASE NUL AVEC DES CARACTERISTIQUES DE MICROREGIMEMATSON EH A; IGUMNOV DV; RUSAK IM et al.1978; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; BYS; DA. 1978; NO 3; PP. 110-113; ABS. ENG; BIBL. 10 REF.Article

AMPLIFICATEUR MOYENNE FREQUENCE A RECUPERATION RAPIDECHEREMISIN SM.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 3; PP. 118-119; BIBL. 3 REF.Article

WIDE-BAND MATCHED AMPLIFIER DESIGN USING DUAL LOOP FEEDBACK AND TWO COMMON EMITTER TRANSISTOR STAGES.APRILLE TJ JR.1976; I.E.E.E. TRANS. CIRCUITS SYST.; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 434-442; BIBL. 18 REF.Article

APLLICATION OF TENSOR IN TRANSIENT ANALYSIS OF TRANSISTOR NETWORKS.LAHIRI BK.1976; J. INSTIT. ENGRS (INDIA), ELECTRON. TOLECOMMUNIC. ENGNG DIV.; INDIA; DA. 1976; VOL. 57; NO 2; PP. 57-61; BIBL. 4 REF.Article

POWER FEEDTHROUGH VIA CCB IN COMMON-EMITTER CLASS C HF POWER AMPLIFIERS: A COMMONLY BELIEVED FALLACYSOKAL NO.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 2; PP. 113-116; BIBL. 3 REF.Article

CONCEPTION D'AMPLIFICATEURS DE PUISSANCE A LARGE BANDE EN MICRO-ONDES AVEC MONTAGE A BASE COMMUNEPETROV BE; REZNEV AA.1976; ELEKTROSVJAZ; S.S.S.R.; DA. 1976; NO 10; PP. 56-60; BIBL. 8 REF.Article

EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR DEVICESNING TH; ISAAG RD.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2051-2055; BIBL. 9 REF.Article

ANALYSIS OF TRANSISTOR-RESISTOR-COUPLED DEVICE.KHAN AA; ANAND DAS Y.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 4; PP. 260-263; BIBL. 3 REF.Article

APPLICATION OF TENSOR IN NOISE CALCULATION OF TRANSISTORISED AMPLIFIER.LAHIRI BK.1977; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; INDIA; DA. 1977; VOL. 58; NO 1; PP. 1-5; BIBL. 5 REF.Article

AMPLIFICATION D'ONDES MODULEES PAR LA METHODE DE DOHERTY DANS UN AMPLIFICATEUR DE PUISSANCE A TRANSISTORS EN ONDES DECAMETRIQUESVINOGRADOV P YU; VOROB'EV NI; SOKOLOV EH P et al.1977; ELEKTROSVJAZ; S.S.S.R.; DA. 1977; NO 10; PP. 44-47; BIBL. 4 REF.Article

EN EFFEUILLANT LA PRESSE SPECIALISEE ETRANGEREENGELKING J; GILOTAUX P.1978; NOUV. REV. SON; FRA; DA. 1978; NO 21; PP. 169-173Article

Output resistance of the common-emitter amplifierRODE, D. L.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 9, pp 2004-2008, issn 0018-9383, 5 p.Article

Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar TransistorsMIYAKE, Hiroki; KIMOTO, Tsunenobu; SUDA, Jun et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 942-944, issn 0741-3106, 3 p.Article

Comments on effects of using the more accurate intrinsic concentration on bipolar transistor modeling [J. Appl. Phys. 68, 5911 (1990)]. ReplyRODE, D. L; ROSENBAUM, F. J; LIOU, J. J et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 3973-3976, issn 0021-8979Article

Polarization decoupling of stimulated processes sharing a common emission channelDINEV, S. G; HADJICHRISTOV, G. B.Applied physics. B, Photophysics and laser chemistry. 1990, Vol 51, Num 4, pp 263-266, issn 0721-7269Article

Analysis and synthesis of a common-emitter transistor microwave amplifierORLOV, S. I.Journal of communications technology & electronics. 1997, Vol 42, Num 3, pp 302-307, issn 1064-2269Article

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