MEMORY SWITCHING IN A TYPE I AMORPHOUS CHALCOGENIDETHORNBURG DD.1973; J. ELECTRON. MATER.; U.S.A.; DA. 1973; VOL. 2; NO 1; PP. 3-15; BIBL. 18 REF.Serial Issue

DIRECT OBSERVATION OF SWITCHING PHENOMENA IN MEMORY-TYPE MATERIALS BY ELECTRON MICROSCOPYCHAUDHARI P; LAIBOWITZ RB.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 12; NO 2; PP. 239-242; BIBL. 4 REF.Serial Issue

MEMORY SWITCHING IN AMORPHOUS ARSENIC TRISELENIDETHORNBURG DD.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 2; PP. 113-120; BIBL. 19 REF.Serial Issue

SWITCHING AND MEMORY EFFECTS IN AMORPHOUS CHALCOGENIDE THIN FILMSBUNTON GV; QUILLIAM RM.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 140-144; BIBL. 15 REF.Serial Issue

DISPOSITIVI DI MEMORIA A SEMICONDUTTORI AMORFI E LORO AFFIDABILITA = DISPOSITIFS DE MEMOIRES A SEMICONDUCTEURS AMORPHES ET LEUR FIABILITEBIEY D; MAINO G.1973; ELETTRON. E TELECOMUNIC.; ITAL.; DA. 1973; VOL. 22; NO 2; PP. 53-58; ABS. ANGL.; BIBL. 10 REF.Serial Issue

AMORPHOUS SEMICONDUCTING FILMS: PHYSICAL BACKGROUND OF APPLICATIONSGRIGOROVICI R.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 12; NO 1; PP. 153-166; BIBL. 3 P.Serial Issue

AMORPHOUS MEMORIES AND BISTABLE SWITCHESADLER D; MOSS SC.1972; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1972; VOL. 9; NO 4; PP. 1182-1190; BIBL. 51 REF.Serial Issue

MEMORY SWITCHING PHENOMENA IN THIN FILMS OF THE S-SE-TE SYSTEMHIROSE Y; KUNIOKA A.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 4; PP. 1706-1707; BIBL. 10 REF.Serial Issue

MEMORY EFFECT IN CU-AS-SE GLASSES CONTAINING SMALL AMOUNTS OF AUASAHARA Y; IZUMITANI T.1973; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1973; VOL. 11; NO 5; PP. 407-416; BIBL. 7 REF.Serial Issue