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Results 1 to 25 of 33

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SOME ASPECTS OF RELIABILITY IN AMORPHOUS CHALCOGENIDE MEMORY SWITCHES. = ASPECTS DE LA FIABILITE DANS LES COMMUTATEURS DE MEMOIRE A CHALCOGENURES AMORPHESSTEVENTON AG.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 15; PP. 1869-1881; BIBL. 8 REF.Article

A ZNTE THIN FILM MEMORY DEVICEBURGELMAN M.1980; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1980; VOL. 7; NO 1-3; PP. 93-96; BIBL. 9 REF.Article

AUTOMATIC "TRY AND VERIFY" CIRCUIT TO INVESTIGATE THE RELIABILITY OF MEMORY SWITCHING IN AMORPHOUS MATERIALS.MANHART S; SCHMIDT C; REITHMEIER G et al.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 4; PP. 316-321; BIBL. 12 REF.Article

ELECTRO-OPTICAL PROPERTIES OF AMORPHOUS AS2SE5-SILICON HETEROJUNCTIONS.ALONSO B; PIQUERAS J; MUNOZ E et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 41-43; BIBL. 9 REF.Article

SWITCHING EFFECTS IN ELECTRON - BEAM - DEPOSITED POLYMER FILMS.BALLARD WP; CHRISTY RW.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 1; PP. 81-88; BIBL. 13 REF.Article

AMORPHER HALBLEITERSPEICHERWERKSTOFF NIEDRIGER SCHALTFELDSTAERKE. = MEMOIRE A MATERIAU SEMICONDUCTEUR AMORPHE A CHAMP DE COMMUTATION DE FAIBLE INTENSITEKAS HH.1977; NATURWISSENSCHAFTEN; DTSCH.; DA. 1977; VOL. 64; NO 8; PP. 434-435; BIBL. 4 REF.Article

COMMUTATION MEMOIRE ET PHENOMENE DE CONDUCTION IONIQUE DANS DES VERRES DU SYSTEME AS2S3-AGMARUNO S; NODA M; NONDO Y et al.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 7; PP. 750-757; ABS. ANGL.; BIBL. 15 REF.Article

CHALCOGENIDE MEMORY MATERIALSHOLMBERG SH; SHANKS RR; BLUHM VA et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 333-344; BIBL. 17 REF.Article

AMORPHOUS SEMICONDUCTOR DEVICES DISPLAYING MEMORY IN ONE POLARITY AND THRESHOLD SWITCHING IN THE OPPOSITE POLARITY.NICOLAIDES RV.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 7; PP. 331-333; BIBL. 8 REF.Article

RESEAU LOCAL DE TRANSMISSION DE DONNEES AVEC COMMUTATION DE MEMOIREZAVADSKIJ VM.1980; AVTOMAT. VYCHISLIT. TEKH.; SUN; DA. 1980; NO 5; PP. 83-85; BIBL. 3 REF.Article

SOFTWARE GENERATION TOOLS FOR BANK SWITCHED MEMORYPEDERSEN TJ.1979; COMPSAC 79. INTERNATIONAL COMPUTER SOFTWARE AND APPLICATIONS CONFERENCE. 3/1979/CHICAGO IL; USA; NEW YORK: IEEE; DA. 1979; PP. 612-617; BIBL. 3 REF.Conference Paper

INFLUENCE DE LA MATIERE DES ELECTRODES SUR L'EFFET DE COMMUTATION DANS LES COUCHES TRES RESISTANTES DE SELENIURE DE ZINCOGINSKAS A; CHESNIS A; SHIKTOROV N et al.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 3; PP. 347-353; ABS. LITU. ANGL.; BIBL. 15 REF.Article

EFFET DE COMMUTATION AVEC MEMOIRE DANS LES MONOCRISTAUX DE GA2TE3ALIEV SI; NIFTIEV GM; PLIEV FI et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 3; PP. 579-583; BIBL. 6 REF.Article

THE THRESHOLD CHARACTERISTICS OF CHALCOGENIDE-GLASS MEMORY SWITCHESOWEN AE; ROBERTSON JM; MAIN C et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 32; NO 1-3; PP. 29-52; BIBL. 21 REF.Article

A ZNTE-THIN FILM MEMORY DEVICEBURGELMAN M.1979; EUROPEAN HYBRID MICROELECTRONICS CONFERENCE. 2/1978/GHENT; NLD; PIJNACKER: DUTCH EFFICIENCY BUREAU; DA. 1979; PP. 189-196; BIBL. 9 REF.Conference Paper

BRUIT DE FOND DANS LES HETEROJONCTIONS A COUCHES MINCES SE-AG2SE QUI PRESENTENT UN EFFET DE COMMUTATION AVEC MEMOIREPRIKHOD'KO A; LIBERIS YU; BAREJKIS V et al.1977; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1977; VOL. 17; NO 1; PP. 79-84; ABS. LITU. ANGL.; BIBL. 15 REF.Article

MEMORY SWITCHING IN AMORPHOUS CD-SB FILMSKAWAMURA Y; KASHIWABA Y; IKEDA T et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. 429-433; BIBL. 19 REF.Article

MEMORY SWITCHING IN GEO2 FILMSKHAN MI; HOGARTH CA; KHAN MN et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 2; PP. 215-216; BIBL. 4 REF.Article

MEMORY SWITCHING IN AMORPHOUS GE-S-GA THIN FILMSMYCIELSKI W; LIPINSKI A; IVANOVA Z et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 2; PP. L9-L10; BIBL. 5 REF.Article

FURTHER STUDIES OF MEMORY SWITCHING IN COPPER-CALCIUM-PHOSPHATE GLASS DEVICESMORIDI GR; HOGARTH CA.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 3; PP. 297-304; BIBL. 10 REF.Article

Chemical band approach to the structures of chalcogenide glasses with reversible switching propertiesBICERANO, J; OVSHINSKY, S. R.Journal of non-crystalline solids. 1985, Vol 74, Num 1, pp 75-84, issn 0022-3093Article

ELECTRICAL CONDUCTION IN METAL/IMPLANTED SIO2/SI STRUCTURESRAGAIE HF.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 565-566; BIBL. 8 REF.Article

MEMORY EFFECTS IN GATE FILMS.ROMEO N; SBERVEGLIERI G; TARRICONE L et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 1; PP. 7-11; BIBL. 17 REF.Article

THRESHOLD AND MEMORY SWITCHING IN AMORPHOUS SELENIUM THIN FILMSJONES G; COLLINS RA.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 339-350; ABS. GER; BIBL. 33 REF.Article

SWITCHING IN ORGANIC POLYMER FILMS.HENISCH HK; SMITH WR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 589-591; BIBL. 17 REF.Article

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