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PENETRATION DU CHAMP ELECTRIQUE DANS LE SUPRACONDUCTEUR DE MICROPONTS JOSEPHSONAMATUNI L EH; GUBANKOV VN; ZAJTSEV AV et al.1982; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 5; PP. 1851-1863; ABS. ENG; BIBL. 19 REF.Article

THE PERFORMANCE OF DSW MACHINES FOR VLSI RESEARCHSTEVENSON JJM; ROBERTSON JM.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 33-37; BIBL. 5 REF.Article

NOVEL DYNAMIC C.M.O.S. AMPLIFIER FOR SWITCHED-CAPACITOR INTEGRATORSFELSEN LB.1979; ELECTRON LETTERS; GBR; DA. 1979; VOL. 15; NO 7; PP. 532-533; BIBL. 5 REF.Article

TERNARY RATE-MULTIPLIERSMOUFTAH HT; SMITH KC; VRANESIC ZG et al.1980; IEEE TRANS. COMPUT.; ISSN 0018-9340; USA; DA. 1980; VOL. 29; NO 10; PP. 929-931; BIBL. 11 REF.Article

DEVELOPMENTS IN CMOS MEMORYWATSON D.1979; MICROELECTRON. AND RELIABIL.; GBR; DA. 1979 PUBL. 1980; VOL. 19; NO 5-6; PP. 449-452Conference Paper

A TRANSIENT ANALYSIS OF LATCHUP IN BULK CMOSTROUTMAN RR; ZAPPE HP.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 170-179; BIBL. 6 REF.Article

A CMOS PROCESS FOR VLSI INSTRUMENTATIONTONG QIN YI; ROBERTSON JM.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 29-32; BIBL. 5 REF.Article

LE MICROPROCESSEUR 8 BITS EN CMOS AVEC LES PERFORMANCES DES 8085 ET Z80. EN TECHNOLOGIE "P2CMOS", LE NSC 800 DE NATIONAL SEMICONDUCTOR COMBINE LES MEILLEURES PERFORMANCES DES CLASSIQUES 8085 ET Z80. IL CONSOMME QUINZE FOIS MOINSFONTENAY R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 281; PP. 39-41Article

USE OF A 252CF SOURCE IN COSMIC RAY SIMULATION STUDIES ON CMOS MEMORIESSANDERSON TK; MAPPER D; STEPHEN JH et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 373-374; BIBL. 4 REF.Article

HIGH-GAIN C.M.O.S. CASCADE OPERATIONAL AMPLIFIERKRUMMENACHER F; ZUFFEREY JL.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 6; PP. 232-233; BIBL. 3 REF.Article

A SERIAL PARALLEL 6-TRIT ANALOGUE-TO-TERNARY CONVERTERADHEM SMI; ABDUL KARIM MAH.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 4; PP. 387-395; BIBL. 6 REF.Article

RELIABILITY OF C.M.O.S. CIRCUITS.GALLACE LJ.1978; NEW ELECTRON.; G.B.; DA. 1978; VOL. 11; NO 8; PP. 48-62 (6P.)Article

IMPLEMENTATION OF THE UNARY OPERATORS IN TERNARY LOGIC: A UNIVERSAL CMOS CIRCUITLLORIS A; COBO A; PRIETO A et al.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 4; PP. 307-311; BIBL. 15 REF.Article

MODELING LATCH-UP IN CMOS INTEGRATED CIRCUITSESTREICH DB; DUTTON RW.1982; IEEE TRANS. COMPUT.-AIDED DES. INTEGR. CIRCUITS SYST.; ISSN 50629X; USA; DA. 1982; VOL. 1; NO 4; PP. 157-162; BIBL. 14 REF.Article

A RADIATION HARDENED 256 X 4 BULK CMOS RAMNAPOLI LS; SMELTZER RK; DONNELLY R et al.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 3; PP. 458-463; BIBL. 4 REF.Article

EXPANDING HORIZONS IN C.M.O.S.WATSON D.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 13; PP. 51-55; (3 P.)Article

WHY DON'T THESE PARTS WORK IN OUR CIRCUITS. PREVENTING CMOS FAILURE.HART W.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 42-44Article

LATCHUP-FREE SCHOTTKY-BARRIER CMOSSUGINO M; AKERS LA; REBESCHINI ME et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 110-118; BIBL. 17 REF.Article

A SINGLE CMOS SPEECH SYNTHESIS CHIP AND NEW SYNTHESIS TECHNIQUESINOUE K; WAKABAYASHI K; YOSHIKAWA Y et al.1983; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1983; VOL. 18; NO 1; PP. 87-90; BIBL. 8 REF.Article

CMOS 8-BIT SINGLE-CHIP MICROCOMPUTER HD 6301MAEJIMA H; NAKAMURA H; KIHARA T et al.1981; HITACHI REV.; ISSN 0018-277X; JPN; DA. 1981; VOL. 30; NO 4; PP. 171-176; BIBL. 1 REF.Article

PERFORMANCE OF INTEGRATED DYNAMIC MOS AMPLIFIERSHOSTICKA BJ; HOEFFLINGER B; HERBST D et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 8; PP. 298-300; BIBL. 7 REF.Article

CMOS RELIABILITY.GALLACE LJ; PUJOL HL; SCHNABLE GL et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 287-304; BIBL. 2 P.Article

STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOSCOLINGE JP; DEMOULIN E; LOBET M et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 215-219; BIBL. 20 REF.Article

CMOS-D/A-UMSETZER ERSETZT FEINPOTENTIOMETER = CONVERTISSEUR NUMERIQUE-ANALOGIQUE EN TECHNOLOGIE CMOS UTILISE COMME POTENTIOMETRE DE PRECISIONLOESER P.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 6; PP. 71-74; BIBL. 5 REF.Article

HIGH PERFORMANCE 8-BIT SINGLE-CHIP MICROCOMPUTER HD6301XKEIDA H; KAWASHIMO N; KIHARA T et al.1983; HITACHI REVIEW; ISSN 0018-277X; JPN; DA. 1983; VOL. 32; NO 1; PP. 53-58; BIBL. 1 REF.Article

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