Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("COMPOSE AIIIBV")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 95

  • Page / 4
Export

Selection :

  • and

ON THE STRESS-INDUCED ELECTRICAL PROPERTIES OF POINT DEFECTS IN THE SPHALERITE STRUCTURE. I. THE PIEZOELECTRIC EFFECTBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1047-1049; BIBL. 9 REF.Article

CHEMICAL SHIFT OF THE GA AND AS KALPHA 1,2) AND KBETA 1,3) X-RAY EMISSION LINES.TILGNER J; TOPOL I; LEONHARDT G et al.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 1; PP. 27-30; BIBL. 17 REF.Article

APPLICATIONS OF TERNARY III-V COMPOUNDS TO HIGH-SPEED MICROWAVE MODULATION.IMMORLICA AA JR; PEARSON GL.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 829-836; BIBL. 14 REF.Article

INTERPRETATION DES PHENOMENES ACOUSTOELECTRIQUES PAR UNE THEORIE LINEAIRELEPETRE TP.1972; J. PHYS., COLLOQ.; FR.; DA. 1972; VOL. 33; NO 6; PP. 160-162; ABS. ANGL.; BIBL. 12 REF.; (COLLOQ. PAUL LANGEVIN ULTRASONS; PARIS; 1972)Serial Issue

ON THE STRESS-INDUCED ELECTRICAL PROPERTIES OF POINT DEFECTS IN THE SPHALERITE STRUCTURE. II. THE PIEZORESISTANCE EFFECTBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1050-1052; BIBL. 5 REF.Article

FOTOCATODI AD AFFINITA ELETTRONICA NEGATIVA MATERIALI IIIE V. = PHOTOCATHODE A AFFINITE ELECTRONIQUE NEGATIVE MATERIAU III ET VMALAGUZZI VALERI A.1976; ANTENNA; ITAL.; DA. 1976; VOL. 48; NO 2; PP. 63-64Article

QUANTUM THEORY OF ELECTRONIC DIELECTRIC CONSTANT OF SEMICONDUCTORS (III-V).GOYAL SC; SARKAR KK.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 11-12; PP. 1595-1597; BIBL. 8 REF.Article

THE INFLUENCE OF AN ELECTRIC FIELD ON THE AUGER RECOMBINATION IN SEMICONDUCTORS.GEBRANZIG U; HAUG A; ROSENTHAL W et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 749-760; ABS. ALLEM.; BIBL. 14 REF.Article

ASYMMETRIC CRACKING IN III-V COMPOUNDS.OLSEN GH; ABRAHAMS MS; ZAMEROWSKI TJ et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1650-1656; BIBL. 21 REF.Article

COVALENT BONDING EFFECT ON MAGNETIC SUSCEPTIBILITY IN AIIIBV SEMICONDUCTOR COMPOUNDSSIROTA NN; VITKINA TZ.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 1; PP. 107-110; ABS. RUS; BIBL. 9 REF.Article

ON SURFACE ENERGIES OF ANB8-N SEMICONDUCTING COMPOUNDS.OSHCHERIN BN.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. K 181-K 186; BIBL. 22 REF.Article

SPECTRE D'ENERGIE DES SOLUTIONS SOLIDESZAKHAROV A YU.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 5; PP. 1274-1279; BIBL. 16 REF.Article

ADDITIONAL LONG- AND SHORT-RANGE POTENTIALS FOR DIRECT EXCITONS IN ZINCBLENDE STRUCTURE SOLIDS. II. NUMERICAL RESULTS AND COMPARISON WITH EXPERIMENT.EKARDT W.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 491-496; ABS. ALLEM.; BIBL. 15 REF.Article

ON DEBYE-WALLER FACTORS AND MELTING CRITERIA OF II-VI AND III-V COMPOUND SEMICONDUCTORS.TALWAR DN; AGRAWAL BK.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 17; PP. 2981-2988; BIBL. 1 P.Article

ZUR ABSCHAETZUNG PHYSIKALISCHER UND PHYSIKALISCH-CHEMISCHER DATEN VON ALBV VERBINDUNGEN MIT ZINKBLENDESTRUKTUR = EVALUATION DE DONNEES PHYSIQUES ET PHYSICOCHIMIQUES SUR LES COMPOSES ALBV A STRUCTURE DE BLENDEKUHN G; LEONHARDT A; HUBNER K et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1077-1088; ABS. ANGL.; BIBL. 33 REF.Serial Issue

DISLOCATIONS AND THE PIEZOELECTRIC EFFECT IN III-V CRYSTALS.BOOYENS H; VERMAAK JS; PROTO GR et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3008-3013; BIBL. 17 REF.Article

FLOW OF COVALENT SOLIDS AT LOW TEMPERATURES.GILMAN JJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5110-5113; BIBL. 11 REF.Article

FORBIDDEN BAND WIDTH CHANGE IN SEMICONDUCTOR SUBSTITUTION ALLOYS.BRATASHEVSKII YU A; ZAKHAROV A YU; IVANCHENKO YU M et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 11-12; PP. 1777-1779; ABS. RUSSE; BIBL. 5 REF.Article

DEPLACEMENT CHIMIQUE ET CHARGES EFFECTIVES DES ATOMES DANS LES CRISTAUX A3B5IL'IN NP; MASTEROV VF.1978; FIZ. TVERD. TELA; S.S.S.R.; DA. 1978; VOL. 20; NO 2; PP. 557-561; BIBL. 22 REF.Article

SELECTIVE ETCHING OF III-V COMPOUNDS WITH REDOX SYSTEMS.TIJBURG RP; VAN DONGEN T.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 687-691; BIBL. 8 REF.Article

LOCAL-MODE FREQUENCIES DUE TO SUBSTITUTIONAL IMPURITIES IN ZINC-BLENDE-TYPE CRYSTALS. II. EFFECTS OF FORCE-CONSTANT CHANGES.TALWAR DN; AGRAWAL BK.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 1432-1442; BIBL. 1 P.Article

COEFFICIENT D'ABSORPTION DE LA LUMIERE DANS UN SEMICONDUCTEUR CUBIQUE PARTIELLEMENT DESORDONNESIDENKO TS; SHEKA DI.1978; FIZ. TVERD. TELA; SUN; DA. 1978; VOL. 20; NO 8; PP. 2453-2458; BIBL. 11 REF.Article

VSESOYUZNAYA KONFERENTSIYA PO LYUMINESTSENTSII. 23. MATERIALY; KISHINEV; 1976. = CONGRES DE L'UNION SUR LA LUMINESCENCE. 23. MATIERES; KISHINEV; 19761976; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1976; VOL. 40; NO 11; PP. 2290-2409; BIBL. DISSEM.Conference Paper

A SEMI-EMPIRICAL FORCE-CONSTANT MODEL FOR TETRAHEDRALLY-BONDED SEMICONDUCTORS.BHAR GC.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 3; PP. 463-465; BIBL. 15 REF.Article

AN EXTENSION OF KEYES' CORRELATION.COTTAM RI; SAUNDERS GA.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 367-373; ABS. ALLEM.; BIBL. 28 REF.Article

  • Page / 4