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ON THE STRESS-INDUCED ELECTRICAL PROPERTIES OF POINT DEFECTS IN THE SPHALERITE STRUCTURE. I. THE PIEZOELECTRIC EFFECTBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1047-1049; BIBL. 9 REF.Article

CHEMICAL SHIFT OF THE GA AND AS KALPHA 1,2) AND KBETA 1,3) X-RAY EMISSION LINES.TILGNER J; TOPOL I; LEONHARDT G et al.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 1; PP. 27-30; BIBL. 17 REF.Article

APPLICATIONS OF TERNARY III-V COMPOUNDS TO HIGH-SPEED MICROWAVE MODULATION.IMMORLICA AA JR; PEARSON GL.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 829-836; BIBL. 14 REF.Article

INTERPRETATION DES PHENOMENES ACOUSTOELECTRIQUES PAR UNE THEORIE LINEAIRELEPETRE TP.1972; J. PHYS., COLLOQ.; FR.; DA. 1972; VOL. 33; NO 6; PP. 160-162; ABS. ANGL.; BIBL. 12 REF.; (COLLOQ. PAUL LANGEVIN ULTRASONS; PARIS; 1972)Serial Issue

UNION D'ELEMENTS DES 3EME ET 5EME GROUPES DANS LESQUELS L'EFFET GUNN EST POSSIBLEPROKHOROV EH D.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 22; PP. 3-5; BIBL. 8 REF.Article

MECANISME DES TRANSITIONS ELECTRONIQUES ENTRE VALLEES PAR L'INTERMEDIAIRE DE NIVEAUX QUASI DISCRETS ET EFFET GUNNTIMASHEV SF.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1364-1367; BIBL. 13 REF.Article

PROFILS COMPTON DES ATOMES DES COMPOSES AIIIBV ET AIIBVIKUPLYAUSKIS ZI; YAKIMAVICHYUS IA.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; VOL. 15; NO 4; PP. 569-575; ABS. LITU. ANGL.; BIBL. 7 REF.Article

ON THE STRESS-INDUCED ELECTRICAL PROPERTIES OF POINT DEFECTS IN THE SPHALERITE STRUCTURE. II. THE PIEZORESISTANCE EFFECTBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1050-1052; BIBL. 5 REF.Article

FOTOCATODI AD AFFINITA ELETTRONICA NEGATIVA MATERIALI IIIE V. = PHOTOCATHODE A AFFINITE ELECTRONIQUE NEGATIVE MATERIAU III ET VMALAGUZZI VALERI A.1976; ANTENNA; ITAL.; DA. 1976; VOL. 48; NO 2; PP. 63-64Article

QUANTUM THEORY OF ELECTRONIC DIELECTRIC CONSTANT OF SEMICONDUCTORS (III-V).GOYAL SC; SARKAR KK.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 11-12; PP. 1595-1597; BIBL. 8 REF.Article

THE INFLUENCE OF AN ELECTRIC FIELD ON THE AUGER RECOMBINATION IN SEMICONDUCTORS.GEBRANZIG U; HAUG A; ROSENTHAL W et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 749-760; ABS. ALLEM.; BIBL. 14 REF.Article

ASYMMETRIC CRACKING IN III-V COMPOUNDS.OLSEN GH; ABRAHAMS MS; ZAMEROWSKI TJ et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1650-1656; BIBL. 21 REF.Article

COVALENT BONDING EFFECT ON MAGNETIC SUSCEPTIBILITY IN AIIIBV SEMICONDUCTOR COMPOUNDSSIROTA NN; VITKINA TZ.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 1; PP. 107-110; ABS. RUS; BIBL. 9 REF.Article

ON SURFACE ENERGIES OF ANB8-N SEMICONDUCTING COMPOUNDS.OSHCHERIN BN.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. K 181-K 186; BIBL. 22 REF.Article

SPECTRE D'ENERGIE DES SOLUTIONS SOLIDESZAKHAROV A YU.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 5; PP. 1274-1279; BIBL. 16 REF.Article

ADDITIONAL LONG- AND SHORT-RANGE POTENTIALS FOR DIRECT EXCITONS IN ZINCBLENDE STRUCTURE SOLIDS. II. NUMERICAL RESULTS AND COMPARISON WITH EXPERIMENT.EKARDT W.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 491-496; ABS. ALLEM.; BIBL. 15 REF.Article

ON DEBYE-WALLER FACTORS AND MELTING CRITERIA OF II-VI AND III-V COMPOUND SEMICONDUCTORS.TALWAR DN; AGRAWAL BK.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 17; PP. 2981-2988; BIBL. 1 P.Article

ZUR ABSCHAETZUNG PHYSIKALISCHER UND PHYSIKALISCH-CHEMISCHER DATEN VON ALBV VERBINDUNGEN MIT ZINKBLENDESTRUKTUR = EVALUATION DE DONNEES PHYSIQUES ET PHYSICOCHIMIQUES SUR LES COMPOSES ALBV A STRUCTURE DE BLENDEKUHN G; LEONHARDT A; HUBNER K et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1077-1088; ABS. ANGL.; BIBL. 33 REF.Serial Issue

"UP-HILL" DIFFUSION OF ZINC IN THE III-V SEMICONDUCTORS.TUCK B; ZAHARI MD.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 2; PP. 509-515; ABS. ALLEM.; BIBL. 12 REF.Article

ELECTRONIC STRUCTURE OF THE ACTIVATING LAYER IN III-V: CS-O NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS. = STRUCTURE ELECTRONIQUE DE LA COUCHE ACTIVATRICE DANS LES PHOTOEMETTEURS III-V: CS-O A AFFINITE ELECTRONIQUE NEGATIVECLARK MG.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 5; PP. 535-541; BIBL. 45 REF.Article

CHOCS D'ELECTRONS DANS LES SEMICONDUCTEURS A DEGENERESCENCE INTERMEDIAIREGRYUZNOV OS; TAMARCHENKO VI.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 11; PP. 2131-2137; BIBL. 14 REF.Article

EFFECTIVE CHARGES AND LATTICE DYNAMICS OF ZINC-BLENDE STRUCTURE CRYSTALS. I. EFFECTIVE CHARGESMANI KK; SINGH RP.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 56; NO 2; PP. 723-730; ABS. ALLEM.; BIBL. 27 REF.Serial Issue

DISLOCATIONS AND THE PIEZOELECTRIC EFFECT IN III-V CRYSTALS.BOOYENS H; VERMAAK JS; PROTO GR et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3008-3013; BIBL. 17 REF.Article

FLOW OF COVALENT SOLIDS AT LOW TEMPERATURES.GILMAN JJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5110-5113; BIBL. 11 REF.Article

FORBIDDEN BAND WIDTH CHANGE IN SEMICONDUCTOR SUBSTITUTION ALLOYS.BRATASHEVSKII YU A; ZAKHAROV A YU; IVANCHENKO YU M et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 11-12; PP. 1777-1779; ABS. RUSSE; BIBL. 5 REF.Article

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