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THEORIE DE LA DIFFUSION DES PHONONS PAR LES DEFAUTS DANS LES CRISTAUX FORTEMENT ANISOTROPES A RESEAU NACLLOGACHEV YU A; MOJZHES B YA.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 8; PP. 2209-2216; BIBL. 13 REF.Article

ESTIMATION DE LA COMPOSANTE DE POSITION DE L'ENTROPIE DE FUSION DES COMPOSES SEMICONDUCTEURS EN TENANT COMPTE DE LEUR DISSOCIATION AU POINT DE FUSIONAJVAZOV AA; GLAZOV VM; PAVLOVA LM et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 10; PP. 1939-1944; BIBL. 16 REF.Article

ETUDE DES SOL. SOLIDES A BASE DE MONOSELENIURE DE BIABRIKOSOV N KH; BANKINA VF; KOLOMOETS LA et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 12; PP. 2120-2124; BIBL. 6 REF.Serial Issue

ANOMALOUS RESISTIVITY IN STRUCTURAL PHASE TRANSITION OF IV-VI COMPOUND: P-SNTE.KATAMYAMA S.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 381-383; BIBL. 8 REF.Article

SOFT-PHONON-INDUCED RAMAN SCATTERING IN IV-VI COMPOUNDS.SHIMADA T; KOBAYASHI KLI; KATAYAMA Y et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 39; NO 3; PP. 143-146; BIBL. 11 REF.Article

PHOTOCONDUCTIVITY OF AMORPHOUS COMPOUND SEMICONDUCTORS INVOLVING ELEMENTS FROM GROUPS IV, V AND VI.SHIAH RTS; BUBE RH.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 2005-2014; BIBL. 20 REF.Article

INFLUENCE DE L'HYBRIDATION SUR LA TRANSITION DE PHASE A L'ETAT DE FERROMAGNETIQUE EXCITONIQUEPANKRATOV OA.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 6; PP. 2326-2338; ABS. ANGL.; BIBL. 13 REF.Article

UBER DIE ROENTGENOGRAPHISCHE ANALYSE DER MITTLEREN QUADRATISCHEN ATOMVERSCHIEBUNGEN IN EINIGEN HALBLEITERKRISTALLEN. = ANALYSE RX DES DEPLACEMENTS ATOMIQUES QUADRATIQUES MOYENS DANS QUELQUES CRISTAUX DE SEMICONDUCTEURSBUBLIK V; GORELIK SS.1977; KRISTALL U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 8; PP. 859-869; ABS. ANGL.; BIBL. 18 REF.Article

TRANSITIONS DE STRUCTURE DANS LES COMPOSES A4B6AL'TSHULER AM; VEKILOV YU KH; UMAROV GR et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 9; PP. 2577-2584; BIBL. 14 REF.Article

OBTENTION, ETUDE DES PROPRIETES PHYSIQUES DES MATERIAUX DU TYPE AIVBVI ET UTILISATION POSSIBLE EN MICROELECTRONIQUE (SYNTHESE)KOPINETS IF; BLETSKAN DI; MIGOLINETS IM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 25; PP. 3-17; BIBL. 2 P.Article

EPITAXIAL DEPOSITION OF ACTIVE DEVICES OF THE IV-VI MATERIALS ON AN INSULATING SUBSTRATE.LOPEZ OTERO A; HAAS LD; JANTSCH W et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 111-118; BIBL. 3 REF.Conference Paper

ETATS D'IMPURETES DANS LES SEMICONDUCTEURS SANS BANDE INTERDITE ET A BANDE INTERDITE ETROITEDOLGOV EL; DUGAEV VK; PETROV PP et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 1; PP. 108-111; BIBL. 7 REF.Article

STRUCTURAL, INFRA-RED AND OPTICAL MEASUREMENTS IN SOME IV-VI ALLOY SEMICONDUCTORS.POPOVIC ZV; NIKOLIC PM; CHAMBERLAIN JM et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 64; NO 1; PP. 123-124; BIBL. 7 REF.Article

STRUCTURAL INSTABILITIES AND TRANSVERSE EFFECTIVE CHARGES IN IV-VI COMPOUNDS.KATAYAMA S; KAWAMURA H.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 6; PP. 521-524; BIBL. 11 REF.Article

THERMOELECTRIC POWER OF AMORPHOUS COMPOUND SEMICONDUCTORS.VAN DER PLAS HA; BUBE RH.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 24; NO 3; PP. 377-398; BIBL. 22 REF.Article

IMPURITY DOPANT INCORPORATION AND DIFFUSION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF IV-VI SEMICONDUCTORSSMITH DL; PICKHARDT VY.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 2042-2050; BIBL. 19 REF.Article

INTERNATIONAL CONFERENCE ON LOW LYING LATTICE VIBRATIONAL MODES AND THEIR RELATIONSHIP TO SUPER-CONDUCTIVITY AND FERROELECTRICITY. PROCEEDINGS. II. SAN JUAN-MAYAGUEZ, P.R.; 1975.1977; FERROELECTRICS; G.B.; DA. 1977; VOL. 17; NO 1-2; PP. 317-457; BIBL. DISSEM.Conference Paper

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