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MODE GAIN AND JUNCTION CURRENT IN GAAS UNDER LASING CONDITIONS.HAKKI BW.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 288-294; BIBL. 18 REF.Article

HIGH-FORWARD-VOLTAGE PHENOMENON IN INJECTION GAAS/GE HETEROJUNCTIONS.JAIN FC; MELEHY MA.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 36-39; BIBL. 8 REF.Article

EMISSION FROM AN OPTICALLY PUMPED GAAS UNDER DRIFTING FIELD.MINAMI T; YAMANISHI M; KAWAMURA T et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1327-1328; BIBL. 7 REF.Article

TEMPERATURE DEPENDENCE OF THE BAND GAP AND COMPARISON WITH THE THRESHOLD FREQUENCY OF PURE GAAS LASERS.CAMASSEL J; AUVERGNE D; MATHIEU H et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2683-2689; BIBL. 36 REF.Article

INCREASED RADIATION HARDNESS OF GAAS LASER DIODES AT HIGH CURRENT DENSITIES.BARNES CE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3485-3489; BIBL. 11 REF.Article

LIQUID PHASE EPITAXIAL (LPE) GROWN JUNCTION IN1-XGAXP (X EQUIV. A 0.63) LASER OF WAVE LENGTH LAMBDA EQUIV. A 5900 A (2.10 EV, 77OK).HITCHENS WR; HOLONYAK N JR; LEE MH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 6; PP. 352-354; BIBL. 12 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG THE JUNCTION PLANE.HAKKI BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 292-302; BIBL. 26 REF.Article

SEMICONDUCTORS: EPITAXIAL GROWTH OF LASER DIODES.ROBINSON AL.1975; SCIENCE; U.S.A.; DA. 1975; VOL. 188; NO 4189; PP. 720-722; BIBL. 2 REF.Article

PROPRIETES D'OPTIQUE NON LINEAIRE DU SELENIURE DE GALLIUMSOKOLOV VI; SOLOMONOV YU F; SUBASHIEV VK et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 7; PP. 1914-1920; BIBL. 26 REF.Article

CATASTROPHIC FAILURE IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS.HAKKI BW; NASH FR.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3907-3912; BIBL. 21 REF.Article

EFFECTS OF DOPING AND FREE CARRIERS ON THE REFRACTIVE INDEX OF DIRECT-GAP SEMICONDUCTORS.CROSS M; ADAMS MJ.1974; OPTO-ELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 3; PP. 199-216; BIBL. 33 REF.Article

FAR-FIELD EMISSION PATTERNS OF SINGLE HETEROSTRUCTURE GAAS LASERS.HENSHALL GD; WHITEAWAY JEA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 15; PP. 326-327; BIBL. 7 REF.Article

ON THE DEPENDENCE OF THE PHOTON LIFETIME IN GAAS JUNCTION LASERS ON LASER LENGTH.BISWAS SN; KUMAR N.1973; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1973; VOL. 11; NO 11; PP. 855-856; BIBL. 10 REF.Article

PROCESSUS CHIMIQUES DE FORMATION DE PHOTOCATHODES A BASE D'ARSENIURE DE GALLIUMGUGEL' BM; MELAMID AE; STEPANOV BM et al.1979; RADIOTEKH. I EHLEKTRON.; SUN; DA. 1979; VOL. 24; NO 7; PP. 1433-1439; BIBL. 16 REF.Article

A DENSELY PACKED MONOLITHIC LINEAR ARRAY OF GAAS-ALXGA1-XAS TRIP BROCIED HETEROSTRUCTURE LASERTSANG WT; LOGAN RA; SALATHE RP et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 162-165; BIBL. 4 REF.Article

CARACTERISTIQUES TEMPORELLES DES LASERS A INJECTIONGRIGOR'EV VM.1977; TRUDY NAUCH-ISSLEDOVAT. INST. GIDROMETEOROL. PRIBOROSTR., MOSKVA; S.S.S.R.; DA. 1977; NO 34; PP. 15-18; BIBL. 2 REF.Article

MULTIPLY RESONANT DISTRIBUTED-FEEDBACK LASERS.STOLL HM; SEIB DH.1976; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1976; VOL. 12; NO 1; PP. 53-57; BIBL. 15 REF.Article

SH LASERS WITH A CONSTANT AL DISTRIBUTION IN THE P+-ALXGA1-X AS REGION.MYSZYNSKI Z; NAKWASKI W.1976; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1976; VOL. 24; NO 2; PP. 153-158; ABS. RUSSE; BIBL. 4 REF.Article

DIODES A EMISSION DE LUMIERE A BASE DE NITRURE DE GALLIUM)DEMCHENKO AM; KESAMANLY FP.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 9-16; BIBL. 20 REF.Article

CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS.STERN F.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 5382-5386; BIBL. 25 REF.Article

CW, SINGLE-MODE, TUNABLE GAAS LASER SYSTEM WITH GOOD FREQUENCY STABILITY.PICQUE JL; ROIZEN S; STROKE HH et al.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 6; NO 3; PP. 373-379; BIBL. 29 REF.Article

GE DOPED GAAS DOUBLE HETEROJUNCTION LASERS WITH SI COMPENSATION.ASHLEY KL; DELANEY JB.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 815-816; BIBL. 11 REF.Article

MONOLITHIC GA1-XINXAS MESA LASERS WITH GROWN OPTICAL FACETS.BLUM FA; LAWLEY KL; HOLTON WC et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2605-2611; BIBL. 10 REF.Article

OUTPUT COUPLING AND DISTRIBUTED FEEDBACK UTILIZING SUBSTRATE CORRUGATIONS IN DOUBLE-HETEROSTRUCTURE GAAS LASERS.SCIFRES DR; BURNHAM RD; STREIFER W et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 5; PP. 295-297; BIBL. 13 REF.Article

SINGLE LASER BEAM OF SPATIAL COHERENCE FROM AN ARRAY OF GAAS LASERS: FREE-RUNNING MADE.PHILIPP RUTZ EM.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4552-4556; BIBL. 7 REF.Article

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