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THE VISCOSITY OF THE GASEOUS HEXAFLUORIDES OF SULFUR, SELENIUM AND TELLURIUM.UEDA K; KIGOSHI K.1974; J. INORG. NUCL. CHEM.; G.B.; DA. 1974; VOL. 36; NO 5; PP. 989-992; BIBL. 23 REF.Article

POSSIBILITES D'UTILISATION DE LA DIFFUSION DE LARGE BANDE DANS UN DEFLECTEUR SUIVANT DEUX COORDONNEES, BASE SUR LA DIFFRACTION ANISOTROPEKUZIN AG; KULAKOV SV; SEMENOV AM et al.1979; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 10; PP. 2231-2233Article

SCHOTTKY EFFECT IN THE PR3TE4-PR2TE3 SYSTEM.MITAROV RG; TIKHONOV VV; VASILEV LN et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 457-467; ABS. RUSSE; BIBL. 23 REF.Article

SUSCEPTIBILITE MAGNETIQUE DES ALLIAGES DU SYSTEME TE-TLKUZ'MENKO PP; SUPRINENKO PA; KAL'NAYA GI et al.1974; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1974; VOL. 19; NO 10; PP. 1614-1618; ABS. ANGL.; BIBL. 17 REF.Article

RECTIFICATION PHENOMENA AND PHOTOVOLTAIC EFFECTS IN AN AMORPHOUS SE1-X1TEX1-SE1-X2TEX2 HETEROSTRUCTUREKIKUCHI T; EMA Y; HAYASHI T et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5043-5044; BIBL. 4 REF.Article

DIELECTRIC PROPERTIES OF GLASSY AS10TE75GE15.SRIVASTAVA KK; GOYAL DR; KUMAR A et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 323-329; ABS. ALLEM.; BIBL. 8 REF.Article

SUSCEPTIBILITE MAGNETIQUE DES CHALCOGENURES ET VERRES A BASE DE CHALCOGENURESSUVOROVA LN; BAJDAKOV LA.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 5; PP. 806-810; BIBL. 13 REF.Article

THRESHOLD SWITCHING CHARACTERISTICS.ESQUEDA P; HENISCH HK.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 97-108; BIBL. 17 REF.Article

ETUDE DE LA SUSCEPTIBILITE MAGNETIQUE DES VERRES DES SYSTEMES BINAIRES ARSENIC-TELLURE ET GERMANIUM-TELLUREBAJDAKOV LA; LANUS VR; SOMOVA VG et al.1974; VEST. LENINGRAD. UNIV.; S.S.S.R.; DA. 1974; NO 10; PP. 119-122; ABS. ANGL.; BIBL. 10 REF.Article

ETUDE DE MATERIAUX DOUES D'UNE ANISOTROPIE ARTIFICIELLE DU POUVOIR THERMOELECTRIQUEGEL'FGAT DM; DASHEVSKIJ ZM; DUDKIN LD et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 11; PP. 1932-1935; BIBL. 3 REF.Article

SOME FEATURES RELEVANT TO THE SWITCHING PROCESSES IN THE AMORPHOUS SEMICONDUCTOR SI12GE10AS30TE48.SAJI M; KAO KC.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 2; PP. 275-283; BIBL. 10 REF.Article

EVIDENCE FOR PERCOLATION-CONTROLLED CONDUCTIVITY IN AMORPHOUS ASXTE1-X FILMS.AST DG.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 17; PP. 1042-1045; BIBL. DISSEM.Article

HIGH-STABILITY ACOUSTO-OPTICAL DEVICES USING BULK ACOUSTIC WAVES IN TEO2PROKLOV VV; ANTONOV SN; MESH MY et al.1978; ELECTRON LETTERS; GBR; DA. 1978; VOL. 14; NO 17; PP. 535-536; BIBL. 3 REF.Article

ELECTRONIC STRUCTURE OF AS2S3, AS2SE3 AND AS2TE3 GLASSES BY THE EXTENDED HUECKEL THEORY.SHIMIZU T; ISHII N.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 1; PP. K39-K42; BIBL. 15 REF.Article

INFRARED PROPERTIES OF ASXTE1-X GLASSES.TAYLOR PC; BISHOP SG; MITCHELL DL et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 1; PP. 167-170; BIBL. 17 REF.Article

METHODS FOR COMPENSATING THE NONLINEARITY IN THE DIFFRACTION ANGLE IN TEO2 ABNORMAL BRAGG DEFLECTORS.KAWABUCHI M; FUKUMOTO A; HAYAMI H et al.1975; APPL. OPT.; U.S.A.; DA. 1975; VOL. 14; NO 1; PP. 15; BIBL. 2 REF.Article

PIEZORESISTANCE OF TELLURIUM AND SELENIUM-TELLURIUM MIXED CRYSTALS.TAKAGI T.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 675-681; ABS. ALLEM.; BIBL. 16 REF.Article

CARACTERISTIQUES D'ABSORPTION ET DE LUMINESCENCE D'ACTIVATEURS LANTHANIDES DANS UN VERRE DE TELLURITEKOVALEVA IV; KOLOBKOV VP; YAKHKIND AK et al.1975; FIZ. KHIM. STEKLA; S.S.S.R.; DA. 1975; VOL. 1; NO 4; PP. 308-313; BIBL. 18 REF.Article

ENERGY-BAND GAP AND DENSITY OF SI-AS-TE AMORPHOUS SEMICONDUCTORSNUNOSHITA M; ARAI H.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 2; PP. 337-341; ABS. ALLEM.; BIBL. 17 REF.Serial Issue

ON THE STRUCTURE OF AMORPHOUS GEXTE1-X SYSTEMS.KAMNA AGGARWAL; MENDIRATTA RG; RAJ KAMAL et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 357-361; BIBL. 11 REF.Article

ELECTRICAL CONDUCTIVITY OF GE-TE GLASSES UNDER HYDROSTATIC PRESSURE.NAKAMURA Y; NUMATA M; HOSHINO H et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 2; PP. 259-265; BIBL. 17 REF.Article

RESONANCE ABSORPTION IN THE AMORPHOUS SEMICONDUCTOR SI12-GE10-AS30-TE48.BARAKAT MA; KAO KC; BRIDGES E et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 2; PP. 209-215; BIBL. 10 REF.Article

TEO2 ANISOTROPIC BRAGG LIGHT DEFLECTOR WITHOUT MIDBAND DEGENERACY.YANO T; KAWABUCHI M; FUKUMOTO A et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 689-691; BIBL. 6 REF.Article

THE RELATIONSHIP BETWEEN STATISTICAL ASPECTS OF SWITCHING AND THE STRUCTURE OF CHALCOGENIDE GLASSES.MCMILLAN PW; NESVADRA P.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 2; PP. 189-208; BIBL. 14 REF.Article

GLASS FORMING ABILITY AND THE ELECTRICAL PROPERTIES OF SEMICONDUCTING ASXTE1-X GLASSES.HRUBY A; STOURAC L.1974; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1974; VOL. 24; NO 10; PP. 1132-1138; BIBL. 23 REF.Article

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