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DEVICE APPLICATIONS OF THE TERNARY SEMICONDUCTING COMPOUNDS.SMITH R.1975; J. PHYS., COLLOQUE; FR.; DA. 1975; PP. 89-99; ABS. FR.; BIBL. 2 P. 1/2; (2E. CONF. INT. COMPOSES SEMICOND. TERNAIRES; STRASBOURG; 1975)Conference Paper

CONTRIBUTION TO THE THERMODYNAMICS OF REFRACTORY THREE-COMPONENT COMPOUNDSANDRIEVSKIJ RA; FEDOROV EH M.1975; IN: THERMODYN. NUCL. MATER. PROC. SYMP.; VIENNA; 1974; VIENNA; I.A.E.A.; DA. 1975; VOL. 2; PP. 367-378; ABS. ANGL.; BIBL. 11 REF.Conference Paper

APPLICATIONS OF TERNARY III-V COMPOUNDS TO HIGH-SPEED MICROWAVE MODULATION.IMMORLICA AA JR; PEARSON GL.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 829-836; BIBL. 14 REF.Article

UNION D'ELEMENTS DES 3EME ET 5EME GROUPES DANS LESQUELS L'EFFET GUNN EST POSSIBLEPROKHOROV EH D.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 22; PP. 3-5; BIBL. 8 REF.Article

JUNCTION ELECTROLUMINESCENCE IN CUINS2.BRIDENBAUGH PM; MIGLIORATO P.1975; APPL. PHYS. LAB.; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 459-460; BIBL. 9 REF.Article

NEW SEMICONDUCTING MATERIALS.NIKOLIC PM.1975; SCI. OF SINTERG; YUGOSL.; DA. 1975; VOL. 7; NO 2; PP. 129-146; BIBL. 4 P.Article

BOWING EFFECT OF DIRECT ENERGY GAP IN III-V TERNARY ALLOYSYOSHIOKA H; SONOMURA H; MIYAUCHI T et al.1978; BULL. UNIV. OSAKA PREFECT., A; JPN; DA. 1978; VOL. 27; NO 2; PP. 137-147; BIBL. 9 REF.Article

THERMAL CONDUCTIVITY OF TERNARY COMPOUNDSWASIM SM.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K35-K40; BIBL. 13 REF.Article

IMAGING IN TERNARY CHALCOGENIDE SENSORS BY PHOTO AND THERMAL DOPING.INOUE E; YASUJIMA H; KOKADO H et al.1977; PHOTOGR. SCI. ENGNG; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 142-145; BIBL. 8 REF.Article

TERNARY COMPOUNDS. A PROMISING WAY TO MAKE SUPERCONDUCTORS.ROBINSON AL.1977; SCIENCE; U.S.A.; DA. 1977; VOL. 196; NO 4293; PP. 966-968Article

EXCITON PERCOLATION. I. MIGRATION DYNAMICS.HOSHEN J; KOPELMAN R.1976; J. CHEM. PHYS.; U.S.A.; DA. 1976; VOL. 65; NO 7; PP. 2817-2823; BIBL. 14 REF.Article

PROBLEMS IN OPTOELECTRONIC SEMICONDUCTORS.WHITE AM.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 4; PP. 714-726; BIBL. 104 REF.Article

TERNARY SEMICONDUCTORS OF TYPE IB-III-VI2 AND IIB-IV-V2.KAUFMANN U; SCHNEIDER J.1974; IN: FESTKOERPER PROBL. XIV. PLENARY LECT. GER. PHYS. SOC.; FREUDENSTADT; 1974; OXFORD; PERGAMON; DA. 1974; PP. 229-260; BIBL. 3 P.Conference Paper

PREPARATION AND PROPERTIES OF TERNARY II-IV-V2 LAYERS AND HETEROJUNCTIONS BASED ON THEMVALOV YA; GORYUNOVA NA; LEONOV EI et al.1973; ACTA PHYS. ACAD. SCI. HUNGAR.; HONGR.; DA. 1973; VOL. 33; NO 1; PP. 1-15; ABS. RUSSE; BIBL. 10 REF.Serial Issue

THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS.SEBESTYEN T; HARTNAGEL HL; HERRON LH et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 12; PP. 1073-1077; BIBL. 20 REF.Article

EFFECT OF DISORDER ON DIRECT AND INDIRECT BAND GAPS OF SEMICONDUCTOR ALLOYS.ALTARELLI M.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 10; PP. 1607-1611; ABS. ALLEM.; BIBL. 26 REF.Article

DETECTION INFRAROUGE PAR LES SOLUTIONS SOLIDES TERNAIRES PB1-XSNXTE.MOULIN M; FAURE M; CADOZ JL et al.1972; SEMINAIRES CHIM. ETAT SOLIDE; FR.; DA. 1972; NO 7; PP. 103-108; ABS. ANGL.; BIBL. 25 REF.Article

RELATION BETWEEN THE PHONON FREQUENCIES AND COHESIVE ENERGY OF CRYSTALSSETHI VC; AGARWAL SK; WARRIER AVR et al.1982; JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS; ISSN 0022-3697; USA; DA. 1982; VOL. 43; NO 3; PP. 329-331; BIBL. 10 REF.Article

LIQUID PHASE EPITAXY OF II-IV-V2 CHALCOPYRITE COMPOUNDS.BEDAIR SM; LITTLEJOHN MA.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 952-956; BIBL. 19 REF.Article

ETUDE PRELIMINAIRE DE PHOTORECEPTEURS A BASE DE COMPOSES III-V A GRANDE LARGEUR DE BANDE INTERDITE.BOISSY MC; DIGUET D.1975; DGRST-7470677; FR.; DA. 1975; PP. 1-25; BIBL. 4 REF.; (RAPP. FINAL, ACTION CONCERTEE: CCM)Report

CATHODOLUMINESCENCE STUDIES ON COMPOUND SEMICONDUCTORS.STRACK H.1974; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1974; VOL. 47; NO 2; PP. 46-54; ABS. ALLEMArticle

ANALYSE DE L'EVOLUTION DES DEFAUTS DE STRUCTURE DE SEMICONDUCTEURS PAR TOPOGRAPHIE EN REFLEXION DE TYPE BERG BARRETTVEILEX R; SCHILLER C.1971; DGRST-70 72 335; FR.; DA. 1971; PP. (37 P.); H.T. 20; ABS. FR.; BIBL. 1 P.; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.). 4 FASCReport

EPITAXIAL LAYERS OF SEMICONDUCTOR TERNARY COMPOUNDS DEPOSITED BY R.F. MULTICATHODE SPUTTERINGCORSI C; PETROCCO G; ALFIERI I et al.sdIN: C.R. SYMP. PULVERISATION CATHOD. APPL.; NICE; 1972; PARIS; MAPREN; DA. S.D.; PP. 37-52; BIBL. 12 REF.Conference Paper

DETECTIVITY CALCULATIONS OF III-V TERNARY COMPOUND PDB PHOTODETECTORSKAUSHIK SB; PUROHIT RK; SHARMA BL et al.1983; INFRARED PHYSICS; ISSN 0020-0891; GBR; DA. 1983; VOL. 23; NO 1; PP. 15-18; BIBL. 10 REF.Article

SPRAY PYROLYSIS OF TERNARY AND QUATERNARY SOLAR CELL MATERIALSPAMPLIN BR.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 1; NO 4; PP. 395-403; BIBL. 3 P.Article

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