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MOS PROPERTIES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 837-843; ABS. FRE; BIBL. DISSEM.Conference Paper

CHARGE DISTRIBUTION EN METAL/AL2O3/SIO2/SI. STRUCTURESEL DESSOUKY A; BALK P.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 75; NO 2; PP. 195-197; BIBL. 6 REF.Article

ENDURANCE AND RETENTION OF MNOS DEVICES OVER THE TEMPERATURE RANGE FROM -50OC TO +125OCJONES RV; BROWN WD.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 6; PP. 959-972; BIBL. 10 REF.Article

EFFET PHOTO-ELECTRIQUE DANS LES CELLULES SANDWICHES MULTICOUCHES RENFERMANT DE LA PHTALOCYANINEILATOVSKIJ VA; DMITRIEV IB; KOMISSAROV GG et al.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1219-1222; BIBL. 4 REF.Article

ETUDE DE LA FIABILITE DU DIELECTRIQUE-PORTE DES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURLASHEVSKIJ RA; FILARETOV GA; SHAPIRO LA et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 347-354; BIBL. 12 REF.Article

FABRICATION-RELATED EFFECTS IN METAL-ZNO-SIO2-SI STRUCTURES.CORNELL ME; ELLIOTT JK; GUNSHOR RL et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 560-562; BIBL. 8 REF.Article

MNOS DENSITY PARAMETERS.BREWER JE.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 618-625; BIBL. 9 REF.Article

PSEUDOSTABLE MNOS STRUCTURES.KASPRZAK LA; GAIND AK; HORNUNG A et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 10; PP. 1631-1634; BIBL. 11 REF.Article

SUBTHRESHOLD DEGRADATION IN MNOS TECHNOLOGYCHAUDHARI PK.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 170-175; BIBL. 13 REF.Article

TWO-DIMENSIONAL PLASMONS IN MULTI-LAYERED STRUCTURESCHAPLIK AV; KRASHENINNIKOV MV.1980; SOLID STATE COMMUNIC.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 2; PP. 189-190; BIBL. 5 REF.Article

MEMORY-WINDOW-SIZE-TEMPERATURE DEPENDENCE OF THE METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTUREMANNING RW; BROWN WD.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1039-1043; BIBL. 16 REF.Article

MULTILAYERED ENCAPSULATION OF GAASLIDOW A; GIBBONS JF; MAGEE T et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 10; PP. 5213-5217; BIBL. 22 REF.Article

A SHORT CHANNEL MOS MODEL INCORPORATING SUBSTHRESHOLD AND AVALANCHE MULTIPLICATION CURRENTS.GUPTA VK; SCHWARTZ AW.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 122-126; BIBL. 24 REF.Conference Paper

NEW TYPES OF METAL-INSULATOR-SEMICONDUCTOR SWITCHADAN A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 17-21; BIBL. 10 REF.Article

TRANSPORT PROCESSES OF ELECTRONS IN MNOS STRUCTURESSUZUKI E; HAYASHI Y; YANAI H et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7001-7006; BIBL. 26 REF.Article

STABLE ROOM-TEMPERATURE LIGHT EMISSION FROM METAL-INSULATOR-METAL JUNCTIONS.JAIN RK; WAGNER S; OLSON DH et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 62-64; BIBL. 17 REF.Article

TEST RESULTS ON AN MNOS MEMORY ARRAY.SCHUERMEYER FL.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 564-568; BIBL. 6 REF.Article

PHOTOEXCITATION DES COURANTS D'EMISSION DANS LES SYSTEMES SEMICONDUCTEUR-DIELECTRIQUE-METALBENSON FM; MILLER AA; SHAPOSHNIKOV AN et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 6; PP. 85-89; BIBL. 11 REF.Article

SYSTEMES DE MEMOIRE A BASE DE STRUCTURES MDS ET MNOSRZHANOV AV; SINITSA SP.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 6; PP. 491-501; BIBL. 5 REF.Article

A METHOD OF TUNGSTEN DOPANT DEPOSITION FOR DUAL-DIELECTRIC CHARGE-STORAGE CELLS.LIGENZA JR; KAHNG D; LEPSELTER MP et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 581-583; BIBL. 8 REF.Article

A SIMPLIFIED HIGH-FREQUENCY MOS CAPACITANCE FORMULA. = FORMULE SIMPLIFIEE DE LA CAPACITE MOS A FREQUENCE ELEVEEBREWS JR.1977; SOLID. STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 607-608; BIBL. 3 REF.Article

PROPRIETES ELECTROPHYSIQUES DES STRUCTURES MDS A BASE DE GE-SIO2-SI3N4-ALGOROKHOV EB; KAMENKOVICH EL; NEIZVESTNYJ IG et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 354-358; BIBL. 32 REF.Article

ETUDE DE L'EFFET DES TRAITEMENTS CHIMIQUES SUR L'ETAT DE CHARGE DU SYSTEME SI-SIO2-MOGURSKIJ LI; KOSTENKO EM; RUMAK NV et al.1980; VESCI AKAD. NAVUK BSSR, SER. FIZ.-TEH. NAVUK; ISSN 0002-3566; BYS; DA. 1980; NO 4; PP. 31-34; ABS. ENG; BIBL. 4 REF.Article

SUR LA COMMUTATION DU COURANT DANS UNE STRUCTURE METAL-COUCHE A TRANSPARENCE TUNNEL DE SIO2-JONCTION P-NMALAKHOV BA; POKALYAKIN VI; STEPANOV GV et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 3; PP. 241-248; BIBL. 11 REF.Article

ANNEALING EFFECTS IN TUNNEL JUNCTIONS (THERMAL ANNEALING)KONKIN MK; ADLER JG.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8125-8128; BIBL. 8 REF.Article

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