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IMPLANTATION D'IONS LOURDS DANS LES MONOCRISTAUX DE SILICIUMKISELEVICH M; LYATUSHINSKIJ A; ZHUK V et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 4; PP. 1080-1084; BIBL. 7 REF.Article

ON THE TECHNIQUE AND EVALUATION OF ANGLE-BEVELING SILICON EPITAXIAL LAYERS.SEVERIN PJ; BULLE H; POODT G et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 440-443; BIBL. 12 REF.Article

FONCTION DE GREEN ET DENSITE D'ETATS DES ELECTRONS DANS UN CHAMP D'IMPURETES DISTRIBUEES ALEATOIREMENTLIDORENKO NS; ARBUZOV YU D; EVDOKIMOV VM et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 4; PP. 985-991; BIBL. 8 REF.Article

CHARACTERIZATION OF POLYCRYSTALLINE ZONE-REFINED INGOTS OF HIGH-PURITY GERMANIUM.HUBBARD GS; HALLER EE; HANSEN WL et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 130; NO 2; PP. 481-485; BIBL. 7 REF.Article

CONCENTRATION DEPENDENCE CURVES OF Y2O2S:EU.OZAWA L; HERSH HN.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1222-1225; BIBL. 15 REF.Article

EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON CARBIDE.LUCKE W; COMAS J; HUBLER G et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 994-997; BIBL. 15 REF.Article

STRUCTURE ELECTRONIQUE DU GRAPHITE DOPEBELYJ AA; OVCHINNIKOV AA.1975; TEOR. EKSPER. KHIM., U.S.S.R.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 723-731; BIBL. 7 REF.Article

IMPURITY-CONCENTRATION PROFILE FOR AN EXPONENTIALLY DECAYING DIFFUSION COEFFICIENT IN IRRADIATION ENHANCED DIFFUSION.KOWALL J; PEAK D; CORBETT JW et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 2; PP. 477-478; BIBL. 10 REF.Article

EFFECT OF IRON IMPURITY CONCENTRATION ON KINETICS ORDER OF THERMOLUMINESCENT BLUE EMISSION IN MGO SINGLE CRYSTALS.TAKEUCHI N; INABE K; NANTO H et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 10; PP. 1267-1269; BIBL. 15 REF.Article

FLUORESCENCE STUDY OF SRS: HO PHOSPHORS.JAIN SK; PALIWAL SS; SINHA OP et al.1975; INDIAN J. PHYS.; INDIA; DA. 1975; VOL. 49; NO 4; PP. 296-299; BIBL. 16 REF.Article

COMPORTEMENT DYNAMIQUE DES DISLOCATIONS DANS LA GLACE.PEREZ J; TATIBOUET J; VASSOILLE R et al.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 5; PP. 985-999; ABS. ANGL.; BIBL. 21 REF.Article

ETUDE DE LA DIFFUSION DES ATOMES D'INSERTION ENTRE LA SURFACE ET LE VOLUME DES CORPS SOLIDES. DIFFUSION DU CARBONE DANS LE RHENIUMTONTEGODE A YA; ABDULLAEV RM; YUSIFOV FK et al.1975; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1975; VOL. 45; NO 9; PP. 1904-1914; BIBL. 15 REF.Article

METHODE NUMERIQUE DE RECHERCHE DE LA DISTRIBUTION DE LA CONCENTRATION D'IMPURETE DANS DES COUCHES SEMICONDUCTRICES NON HOMOGENES D'APRES LEURS SPECTRES DE REFLEXIONUSANOV DA; BURENIN PV.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 2; PP. 140-144; BIBL. 24 REF.Article

DEPENDENCE OF EPR LINEWIDTH ON MN CONTENT IN SNTE.INOUE M; YAGI H; KAMINO Y et al.1974; J. PHYS. SOC. JAP.; JAP.; DA. 1974; VOL. 37; NO 1; PP. 284; BIBL. 7 REF.Article

VARIATION EN AMPLITUDE DU FROTTEMENT INTERNE DANS LES MONOCRISTAUX DE MOLYBDENE ET DE TUNGSTENEPOLOTSKIJ IG; VENIEVA T YA; GOLUB TV et al.1976; METALLOFIZIKA, U.S.S.R.; S.S.S.R.; DA. 1976; NO 64; PP. 58-62; BIBL. 11 REF.Article

SIMULTANEOUS DETERMINATION OF THE TOTAL CONTENT OF BORON AND PHOSPHORUS IN HIGH-RESISTIVITY SILICON BY IR SPECTROSCOPY AT LOW TEMPERATURES.KOLBESEN BO.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 353-355; BIBL. 16 REF.Article

SPECTRES ET DUREES DE VIE DE FLUORESCENCE DE CRISTAUX MIXTES ANTHRACENE-PHENANTHRENEIWASHIMA S; HONDA H; KURAMACHI M et al.1975; NIPPON KAGAKU KAISHI; JAP.; DA. 1975; NO 5; PP. 746-750; ABS. ANGL.; BIBL. 18 REF.Article

CHANNELING FLUX IN SINGLE CRYSTALS WITH INTERSTITIAL ATOMS: IMPURITY CONCENTRATION DEPENDENCE.DELLA MEA G; DRIGO AV; LO RUSSO S et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 5; PP. 1836-1846; BIBL. 16 REF.Article

A STUDY OF THE MOLAR FRACTION EFFECT IN THE PCL3-IN-H2 SYSTEM.CLARKE RC.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 166-168; BIBL. 11 REF.Article

ABSORPTION DE LA LUMIERE DANS LE SILICIUM FORTEMENT DOPEVENGALIS B YU; KASTAL'SKIJ AA; MAL'TSEV SB et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 2; PP. 526-529; BIBL. 9 REF.Article

INFLUENCE DU RECOUVREMENT DES FONCTIONS D'ONDE DES ATOMES D'IMPURETES HYDROGENOIDES SUR LE SPECTRE D'ABSORPTION OPTIQUE DES SEMICONDUCTEURS FORTEMENT COMPENSESKAL'FA AA.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 1; PP. 47-52; BIBL. 10 REF.Article

THE VARIATION OF IMPURITY IONIZATION WITH DOPING IN HEAVILY DOPED GERMANIUM.ROY DK; GEORGE PJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 757-758; BIBL. 7 REF.Article

RESONANCE GAMMA NUCLEAIRE DES ATOMES NEUTRES D'ETAIN DANS UNE MATRICE CRISTALLINE IN2TE3KOSHKIN VM; OVECHKINA EE; ROMANOV VP et al.1975; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 69; NO 6; PP. 2218-2221; ABS. ANGL.; BIBL. 10 REF.Article

CONTROL OF IMPURITY DENSITY IN HOMOEPITAXIAL SEMICONDUCTOR LAYERS GROWN BY SUBLIMATION AT UHVBENNETT RJ; PARISH C.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 497-501; BIBL. 10 REF.Serial Issue

ELARGISSEMENT DE NIVEAUX LOCALISES DU A LA CONCENTRATION DANS UN FERROMAGNETIQUE A IMPURETES ANTIFERROMAGNETIQUESBALAGUROV B YA; GEJLIKMAN MB.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 5; PP. 1851-1860; ABS. ANGL.; BIBL. 8 REF.Article

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