MECANISME DE CROISSANCE DES COUCHES MONOCRISTALLINES DE GERMANIUM A PARTIR D'UN FAISCEAU MOLECULAIRE DANS LE VIDETIKHONOVA AA.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 3; PP. 615-621; H.T. 1; BIBL. 14 REF.Article

A SIMPLY CONSTRUCTED HIGH PERFORMANCE E-BEAM EVAPORATION SOURCEANDREW R.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 6; PP. 376-377Article

IONIZED ZN DOPING OF GAAS MOLECLAR BEAM EPITAXIAL FILMS.NAGANUMA M; TAKAHASHI K.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 342-344; BIBL. 12 REF.Article

EFFECTS OF VERY LOW GROWTH RATES ON GAAS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURESMETZE GM; CALAWA AR.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 818-820; BIBL. 9 REF.Article

GROWTH OF INGAASP BY MOLECULAR BEAM EPITAXYHOLAH GD; EISELE FL; MEEKS EL et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1073-1075; BIBL. 13 REF.Article

THE GROWTH OF ININTENTIONALLY DOPED LAYERS OF GAAS USING MOLECULAR BEAM EPITAXYCOVINGTON DW; MEEKS EL.1978; SOUTHEASTCON'78. INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS. REGION 3. CONFERENCE/1978-04-10/ATLANTA GA; USA; NEW YORK: IEEE; DA. 1978; 380-383; BIBL. 12 REF.Conference Paper

ANISOTROPIE DE CROISSANCE DES COUCHES DE EUS SUR SUPPORT AMORPHEPALATNIK LS; MARINCHEVA VE; NABOKA MN et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 629-633; H.T. 1; BIBL. 12 REF.Article

GROWTH OF CDTE FILMS ON SAPPHIRE BY MOLECULAR BEAM EPITAXYMYERS TH; YAWCHENG LO; BICKNELL RN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 247-248; BIBL. 8 REF.Article

GRADED-BANDGAP III-V TERNARY COMPOUND FILMS BY MOLECULAR BEAM EPITAXY.TATEISHI K; NAGANUMA M; TAKAHASHI K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 5; PP. 785-789; BIBL. 12 REF.Article

SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR BEAM EPITAXY.CHANG LL; SEGMUELLER A; ESAKI L et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 39-41; BIBL. 15 REF.Article

HIGH-SPEED GAAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR GROWN BY MOLECULAR BEAM EPITAXYANKRI D; SCHAFF WJ; BARNARD J et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 278-280; BIBL. 6 REF.Article

LOW THRESHOLD VOLTAGE ZNSE:MN THIN FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR BEAM DEPOSITIONMISHIMA T; TAKAHASHI K.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2153-2155; BIBL. 7 REF.Article

SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERSBEAN JC; SADOWSKI EA.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 137-142; BIBL. 28 REF.Article

THREE-TEMPERATURE METHOD AS AN ORIGIN OF MOLECULAR BEAM EPITAXYFRELLER H; GUENTHER KG.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 4; PP. 291-307; BIBL. 38 REF.Article

MEASUREMENT OF GA AND AL IN A MOLECULAR-BEAM EPITAXY CHAMBER BY ATOMIC ABSORPTION SPECTROMETRY (AAS).KOMETANI TY; WIEGMANN W.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 933-936; BIBL. 11 REF.Conference Paper

Reactive molecular beam epitaxyYOSHIDA, S.CRC Critical reviews in solid state and materials sciences. 1984, Vol 11, Num 4, pp 287-316, issn 0161-1593Article

PROPERTIES OF SILICON-DOPED AL_XGA_1-XAS GROWN BY MOLECULAR BEAM EPITAXYFISCHER R; DRUMMOND TJ; THORNE RE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 99; NO 4; PP. 391-397; BIBL. 12 REF.Article

FILM THICKNESS DISTRIBUTION AT OBLIQUE EVAPORATIONSVENSSON SP; ANDERSSON TG.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 245-247; BIBL. 4 REF.Article

GE INCORPORATION IN GAAS GROWN BY MOLECULAR BEAM EPITAXY: A THERMODYNAMIC STUDYMUNOZ YAGUE A; BACEIREDO S.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2108-2113; BIBL. 24 REF.Article

OPERATIONAL ASPECTS OF A GALLIUM PHOSPHIDE SOURCE OF P₂ VAPOR IN MOLECULAR BEAM EPITAXYWRIGHT SL; KROEMER H.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 143-148; BIBL. 30 REF.Article

EFFECT OF BACKGROUND DOPING ON THE ELECTRON MOBILITY OF (AL, GA)AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5689-5690; BIBL. 11 REF.Article

THREE PERIOD (A1,GA)AS/GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 442-444; BIBL. 12 REF.Article

AN UNCOMPENSATED SILICON BIPOLAR JUNCTION TRANSISTOR FABRICATED USING MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; GRABBE P et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 293-295; BIBL. 4 REF.Article

IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FET'SWOOD CEC; DESIMONE D; JUDAPRAWIRA S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2074-2078; BIBL. 13 REF.Article

MICROSTRUCTURE OF TELLURIUM FILMSCHAKRABARTI B; CHAUDHURI S; MALHOTRA GL et al.1980; J. APPL. PHYS; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4111-4114; BIBL. 16 REF.Article