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FORMATION D'UN PRODUIT DE CONDENSATION DE COMPOSITION STOECHIOMETRIQUE LORS DE L'EVAPORATION SOUS VIDE DU QUARTZ PAR FAISCEAU ELECTRONIQUEAJVAZOV V YA; POROZOV YU P.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 8; PP. 1377-1380; BIBL. 11 REF.Article

CRISTALLISATION DES COUCHES EPITAXIQUES PAR LA METHODE DE CONDENSATION SOUS VIDE (CONDITIONS OPTIMALES ET MECANISME D'ORIENTATION)SHEFTAL RN; BOROVINSKIJ LA.1974; ROST KRISTALLOV; S.S.S.R.; DA. 1974; VOL. 10; PP. 62-70; BIBL. 12 REF.Article

MECANISME DE CROISSANCE DES COUCHES MONOCRISTALLINES DE GERMANIUM A PARTIR D'UN FAISCEAU MOLECULAIRE DANS LE VIDETIKHONOVA AA.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 3; PP. 615-621; H.T. 1; BIBL. 14 REF.Article

A SIMPLY CONSTRUCTED HIGH PERFORMANCE E-BEAM EVAPORATION SOURCEANDREW R.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 6; PP. 376-377Article

IONIZED ZN DOPING OF GAAS MOLECLAR BEAM EPITAXIAL FILMS.NAGANUMA M; TAKAHASHI K.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 342-344; BIBL. 12 REF.Article

MBE EVAPORATION SOURCE FITTED WITH SHUTTER AND WATER-COOLED JACKETBOSACCHI A; FRANCHI S; ALLEGRI P et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 3; PP. 897-898; BIBL. 5 REF.Article

DESIGN CONSIDERATIONS FOR MOLECULAR BEAM EPITAXY SYSTEMSLUSCHER PE; COLLINS DM.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 2; NO 1-2; PP. 15-32; BIBL. 28 REF.Article

EFFECTS OF VERY LOW GROWTH RATES ON GAAS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURESMETZE GM; CALAWA AR.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 818-820; BIBL. 9 REF.Article

GROWTH OF INGAASP BY MOLECULAR BEAM EPITAXYHOLAH GD; EISELE FL; MEEKS EL et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1073-1075; BIBL. 13 REF.Article

THE GROWTH OF ININTENTIONALLY DOPED LAYERS OF GAAS USING MOLECULAR BEAM EPITAXYCOVINGTON DW; MEEKS EL.1978; SOUTHEASTCON'78. INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS. REGION 3. CONFERENCE/1978-04-10/ATLANTA GA; USA; NEW YORK: IEEE; DA. 1978; 380-383; BIBL. 12 REF.Conference Paper

ANISOTROPIE DE CROISSANCE DES COUCHES DE EUS SUR SUPPORT AMORPHEPALATNIK LS; MARINCHEVA VE; NABOKA MN et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 629-633; H.T. 1; BIBL. 12 REF.Article

GROWTH OF CDTE FILMS ON SAPPHIRE BY MOLECULAR BEAM EPITAXYMYERS TH; YAWCHENG LO; BICKNELL RN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 247-248; BIBL. 8 REF.Article

GRADED-BANDGAP III-V TERNARY COMPOUND FILMS BY MOLECULAR BEAM EPITAXY.TATEISHI K; NAGANUMA M; TAKAHASHI K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 5; PP. 785-789; BIBL. 12 REF.Article

SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR BEAM EPITAXY.CHANG LL; SEGMUELLER A; ESAKI L et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 39-41; BIBL. 15 REF.Article

HIGH-SPEED GAAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR GROWN BY MOLECULAR BEAM EPITAXYANKRI D; SCHAFF WJ; BARNARD J et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 278-280; BIBL. 6 REF.Article

LOW THRESHOLD VOLTAGE ZNSE:MN THIN FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR BEAM DEPOSITIONMISHIMA T; TAKAHASHI K.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2153-2155; BIBL. 7 REF.Article

SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERSBEAN JC; SADOWSKI EA.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 137-142; BIBL. 28 REF.Article

THREE-TEMPERATURE METHOD AS AN ORIGIN OF MOLECULAR BEAM EPITAXYFRELLER H; GUENTHER KG.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 4; PP. 291-307; BIBL. 38 REF.Article

MEASUREMENT OF GA AND AL IN A MOLECULAR-BEAM EPITAXY CHAMBER BY ATOMIC ABSORPTION SPECTROMETRY (AAS).KOMETANI TY; WIEGMANN W.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 933-936; BIBL. 11 REF.Conference Paper

EFFECT OF ARSENIC DIMER/TETRAMER RATIO ON STABILITY OF III-V COMPOUND SURFACES GROWN BY MOLECULAR BEAM EPITAXYWOOD CEC; STANLEY CR; WICKS GW et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1868-1871; BIBL. 17 REF.Article

MOLECULAR BEAM EPITAXIAL DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS WITH HIGH CURRENT GAINSSU SL; LYONS WG; TEJAYADI O et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 128-129; BIBL. 10 REF.Article

A PH3 CRACKING FURNACE FOR MOLECULAR BEAM EPITAXYCHOW R; CHAI YG.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. A, VACUUM, SURFACES, AND FILMS; ISSN 512915; USA; DA. 1983; VOL. 1; NO 1; PP. 49-54; BIBL. 12 REF.Article

OPTICAL QUALITY GAINAS GROWN BY MOLECULAR BEAM EPITAXYWICKS G; WOOD CEC; OHNO H et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 435-440; BIBL. 13 REF.Article

CALCULATION OF THE INTEGRATED STICKING COEFFICIENT FROM MEASUREMENTS OF THE FORCE EXERTED ON A SUBSTRATE DURING THE DEPOSITION OF A THIN FILM FROM AN ATOMIC BEAMCUNNINGHAM S; STERN F.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 10; PP. 1847-1851; BIBL. 7 REF.Article

CAPTURE D'IMPURETES PAR CROISSANCE CRISTALLINE A PARTIR D'UNE PHASE GAZEUSE LORSQUE LA SUBSTANCE EST ASYMETRIQUEMENT CAPTUREE PAR DES GRADINSCHERNOV AA; RUZAJKIN MP.1978; IZVEST. KHIM.; GBR; DA. 1978 PUBL. 1979; VOL. 11; NO 3-4; PP. 576-580; ABS. BUL/ENG; BIBL. 6 REF.Article

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