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THE INFLUENCE OF SUPERFICIAL CONDUCTION ON THE MAGNETORESISTIVITY OF ANTIMONY.TSAI CL; WALDORF D; TANAKA K et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 60; NO 1; PP. 72-74; BIBL. 5 REF.Article

SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALINGEITAN B; FROHMAN BENTCHKOWSKY D.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 254-266; BIBL. 29 REF.Article

A NEW METHOD FOR THE MEASUREMENT OF THE SURFACE ELECTRICAL CONDUCTIVITY OF ICE.GRIFFITHS RF; LATHAM J.1974; J. METEOROL. SOC. JAP.; JAP.; DA. 1974; VOL. 52; NO 2; PP. 238-242; ABS. JAP.; BIBL. 9 REF.Article

SURFACE PHYSICS OF SILVER HALIDES.TAN YT.1976; PROGR. SOLID-STATE CHEM.; G.B.; DA. 1976; VOL. 10; NO 4; PP. 193-205; BIBL. 44 REF.Article

EFFETS DE RESONANCE DANS LES SPECTRES DE CONVERSION D'ONDES ELECTROMAGNETIQUES AUX LIGNES DE SEPARATION DE SURFACES AVEC DISPERSION SPATIALEAGRANOVICH VM; KRAVTSOV VE; LESKOVA TA et al.1983; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1983; VOL. 84; NO 1; PP. 103-117; ABS. ENG; BIBL. 11 REF.Article

CONTINUOUS RECORDING OF OUTDOOR INSULATOR SURFACE CONDUCTANCEDAKIN TW; MULLEN GA.1972; I.E.E.E. TRANS. ELECTR. INSULAT.; U.S.A.; DA. 1972; VOL. 7; NO 4; PP. 169-175; BIBL. 4 REF.Serial Issue

ELECTRICAL CHARACTERISTICS OF POLYMER THICK FILM RESISTORS. II: PHENOMENOLOGICAL EXPLANATIONSHEN LI FU.1981; IEEE TRANS. COMPON. HYBRIDS AMNUF. TECHNOL.; ISSN 0148-6411; USA; DA. 1981; VOL. 4; NO 3; PP. 289-293; BIBL. 19 REF.Article

ELECTRICAL CHARACTERISTICS OF POLYMER THICK FILM RESISTORS. I: EXPERIMENTAL RESULTSSHEN LI FU; MONG SONG LIANG; SHIRAMATSU T et al.1981; IEEE TRANS. COMPON. HYBRIDS MANUF. TECHNOL.; ISSN 0148-6411; USA; DA. 1981; VOL. 4; NO 3; PP. 283-288; BIBL. 12 REF.Article

SUR LA CONDUCTIVITE ELECTRIQUE DE LA SURFACE (111) DU GERMANIUM FORMEE PAR SPALLATIONARISTOV V YU; TAL'YANSKIJ VI; KHARLAMOV AA et al.1981; PIS'MA Z. EKSP. TEOR. FIZ.; ISSN 0370-274X; SUN; DA. 1981; VOL. 34; NO 6; PP. 335-338; BIBL. 5 REF.Article

STUDIES OF SURFACE CONDUCTION MECHANISM IN SILICON COVERED BY ULTRA-THIN OXIDE LAYERRUZYLLO J; JAKUBOWSKI A; SWIT A et al.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 26; NO 6; PP. 103-110; ABS. RUS; BIBL. 4 REF.Article

CAVITY'S SURFACE CONDUCTIVITY DEPENDENCE OF THE REPETITION RATE OF THE D.C. PARTIAL DISCHARGE.NAKAMURA K.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 11; PP. 2241-2242; BIBL. 2 REF.Article

ETUDE DU PHENOMENE DE CICATRISATION DES DEFAUTS ENTRAINANT LA PRODUCTION DE DECHARGES PARTIELLES DANS LES ISOLANTS ORGANIQUES.BUI AI; DEJEAN P; HURAUX C et al.1974; DGRST-7371134; FR.; DA. 1974; PP. (36P.); H.T. 7; BIBL. 1 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: ELECTROTECH. GEN.)Report

Photogalvanic in ultrathin film of topological insulatorQUAN SHENG WU; SHENG NAN ZHANG; ZHONG FANG et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 5, pp 895-899, issn 1386-9477, 5 p.Article

Topological InsulatorsXI DAI; XIAO-LIANG QI.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 5, issn 1386-9477, 80 p.Serial Issue

A MATHEMATICAL MODEL FOR CALCULATION OF N, P-TYPE CONDUCTIVITY SURFACES OF SOLID OXIDE ELECTROLYTES: AN APPLICATION TO 15 M/O CSZGOZZI D; GIGLI R.1982; CERAM. INST INT.; ISSN 0272-8842; ITA; DA. 1982; VOL. 8; NO 2; PP. 65-69; BIBL. 19 REF.Article

ETUDE DES PHOTOEFFETS SENSIBLES A LA SURFACE EN UN CONTACT SEMICONDUCTEUR A LARGE BANDE ELECTROLYTEKOLBASOV G YA; SACHENKO AV; SNITKO OV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 9; PP. 1737-1742; BIBL. 15 REF.Article

THEORETICAL ESTIMATES OF THE SHEET RESISTANCE OF GAUSSIAN N-TYPE ION-IMPLANTED LAYERS IN SEMICONDUCTORS: PHOSPHORUS IN SILICONSCARFONE LM; CHLIPALA JD.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 559-566; BIBL. 36 REF.Article

WORK FUNCTION OF IRRADIATED REAL AND CLEANED INDIUM ANTIMONIDE SURFACESLEHR S; PAGNIA H.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 83-91; ABS. GER; BIBL. 30 REF.Article

LOCALISATION DES ELECTRONS SUR LA SURFACE DE CLIVAGE DU GERMANIUM DANS L'HELIUM LIQUIDEVUL BM; ZAVARITSKAYA EH I; ZAVARITSKIJ VN et al.1981; PIS'MA Z. EKSP. TEOR. FIZ.; ISSN 0370-274X; SUN; DA. 1981; VOL. 34; NO 6; PP. 371-374; BIBL. 6 REF.Article

PROPERTIES OF TRANSPARENT CONDUCTING FILMS OF SNO2:SB AND IN2O3:SN DEPOSITED BY HYDROLYSISKULASZEWICZ S; LASOCKA I; MICHALSKI C et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 2; PP. 283-288; BIBL. 8 REF.Article

STUDY OF ANNEAL BEHAVIORS OF N2+-IMPLANTED P-SI BY MEANS OF A LATERAL PHOTOVOLTAIC METHODNIU H; MATSUDA T; TAKAI M et al.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 11; PP. 1983-1992; BIBL. 9 REF.Article

ETUDE DES PROPRIETES ELECTROPHYSIQUES ET DE LA STRUCTURE DES COUCHES MINCES DES DIPHTALOCYANINES DE QUELQUES METAUXPETROVA ML; RUDENOK MI; NOVIK FT et al.1976; VEST. LENINGRAD. UNIV.; S.S.S.R.; DA. 1976; NO 22; PP. 61-64; ABS. ANGL.; BIBL. 3 REF.Article

LOCALIZATION DC SKIN EFFECT AND LINEAR MAGNETORESISTANCEAZBEL MY.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6465-6467; BIBL. 10 REF.Article

INFLUENCE DE DOSES ANORMALEMENT FAIBLES D'IRRADIATION PAR DES NEUTRONS RAPIDES SUR LA RESISTANCE SUPERFICIELLE DU PLOMB POLYCRISTALLINDZHORDZHISHVILI LI.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 2; PP. 333-336; BIBL. 7 REF.Article

ELECTRON INDUCED (SURFACE) CONDUCTIVITY OF FEPJOG JP; WALZADE SJ; BHORASKAR SV et al.1981; POLYMER; ISSN 0032-3861; GBR; DA. 1981; VOL. 22; NO 7; PP. 865-867; BIBL. 16 REF.Article

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