Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("CONDUCTIVITE TYPE N")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 3303

  • Page / 133
Export

Selection :

  • and

EIN NEUER INTEGRIERTER MOS-SCHMITT-TRIGGER = NOUVEAU BISTABLE INTEGRE DU TYPE "TRIGGER DE SCHMITT" EN TECHNOLOGIE MOSKRAUSS M.1982; NACHRICHTENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1982; VOL. 32; NO 1; PP. 35; ABS. ENG/RUS/FRE; BIBL. 1 REF.Article

SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERSSTERN F.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 12; PP. 4891-4899; BIBL. 24 REF.Serial Issue

MAGNETORESISTANCE DES COUCHES MINCES EPITAXIALES N-GAASEMEL'YANKO OV; NASLEDOV DN; NEDEOGLO DD et al.1972; IZVEST. AKAD. NAUK MOLDAV. S.S.R., FIZIKO-TEKH. MAT. NAUK; S.S.S.R.; DA. 1972; NO 1; PP. 64-67; BIBL. 6 REF.Serial Issue

ETUDE DE LA DISTRIBUTION DU CHAMP UHF DANS UN GUIDE D'ONDES RECTANGULAIRE CONTENANT UNE TIGE DE SILICIUM DU TYPE NDENIS VI; KARUZHA YA A; KNISHEVSKAYA LV et al.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 2; PP. 360-364; BIBL. 7 REF.Article

MICROWAVE FARADAY EFFECT IN N TYPE GERMANIUM = EFFET FARADAY HF DANS DU GERMANIUM DE TYPE NSRIVASTAVA GP; KOTHARI PC.1972; J. PHYS. D; G.B.; DA. 1972; VOL. 5; NO 10; PP. 1957-1961; BIBL. 6 REF.Serial Issue

ENERGY RELAXATION OF ELECTRONS IN THE (100)N-CHANNEL OF A SI-MOSFET. I. BULK PHONON TREATMENT.KROWNE CM; HOLM KENNEDY JW.1974; SURF. SCI.; NETHERL.; DA. 1974; VOL. 46; NO 1; PP. 197-231; BIBL. 1 P. 1/2Article

THE RECTIFYING CONTACTS ON CDTE OF N-TYPETOUSKOVA J; KUZEL R.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 257-266; ABS. RUSSE; BIBL. 10 REF.Serial Issue

DEPENDENCE OF MOSFET NOISE PARAMETERS IN N-CHANNEL MOSFETS ON OXIDE THICKNESSPARK HS; VAN DER ZIEL A.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 4; PP. 313-315; BIBL. 8 REF.Article

AMORDNUNG FUER SPEKTRALE RAUSCHUNTERSUCHUNGEN ZWISCHEN 30 MHZ UND 400 MHZ BEI IMPULSARTIG BELASTETEN HALBLEITERN = SYSTEME POUR L'ANALYSE SPECTRALE DU BRUIT ENTRE 30 MHZ ET 400 MHZ SUR DES SEMICONDUCTEURS EXCITES PAR IMPULSIONSSACHSE K.1979; ARCH. ELEKTROTECH.; DEU; DA. 1979; VOL. 61; NO 2; PP. 123-128; ABS. ENG; BIBL. 4 REF.Article

P-CHANNEL MOS TRANSISTOR IN INDIUM ANTIMONIDE.SHAPPIR J; MARGALIT S; KIDRON I et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 960-961; BIBL. 9 REF.Article

THRESHOLD VOLTAGE SHIFT OF N-CHANNEL SI-GATE MOSFET'S.HORIUCHI S.1975; I.E.E.E. TRANS ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1038-1043; BIBL. 18 REF.Article

ENERGY RELAXATION OF ELECTRONS IN THE (100) N-CHANNEL OF A SI-MOSFET. II. SURFACE PHONON TREATMENT.KROWNE CM; HOLM KENNEDY JW.1974; SURF. SCI.; NETHERL.; DA. 1974; VOL. 46; NO 1; PP. 232-250; BIBL. 1 P.Article

EXPERIMENTAL VERIFICATION OF THE SURFACE QUANTIZATION OF AN N-TYPE INVERSION LAYER OF SILICON AT 300 AND 77OKPALS JA.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 10; PP. 4208-4210; BIBL. 10 REF.Serial Issue

HIGH-PERFORMANCE NMOS OPERATIONAL AMPLIFIERSENDEROWICZ D; HODGES DA; GRAY PR et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 760-766; BIBL. 9 REF.Article

ETUDE EXPERIMENTALE DES CHANGEURS DE FREQUENCE DE LA GAMME MILLIMETRIQUE UTILISANT DES ECHANTILLONS DE N-INSB A 4,2OKVORONENKO VP; VYSTAVKIN AN; ZYABREV BG et al.1972; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1972; VOL. 17; NO 8; PP. 1632-1638; BIBL. 15 REF.Serial Issue

EFFECTS OF PROTON BOMBARDMENT TO N-TYPE GAAS.SAKURAI T; BAMBA Y; FURUYA T et al.1975; FUJITSU SCI. TECH. J.; JAP.; DA. 1975; VOL. 11; NO 2; PP. 71-80; BIBL. 5 REF.Article

A PRACTICAL TECHNIQUE FOR CONTROLLING FIELD PROFILE IN THIN LAYERS OF N-GAASDEAN RH.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1144-1148; BIBL. 22 REF.Serial Issue

CASMOS - AN ACCURATE MOS MODEL WITH GEOMETRY-DEPENDENT PARAMETERS. IOAKLEY RE; HOCKING RJ.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 6; PART. 1; PP. 239-247; BIBL. 9 REF.Article

A SINGLE-CHANNEL PCM VOICE CODEC IN NMOS TECHNOLOGYGALIMBERTI GB; POLUZZI R; BACCARANI G et al.1981; ALTA FREQ.; ISSN 0002-6557; ITA; DA. 1981; VOL. 50; NO 6; PP. 294-301; BIBL. 14 REF.Article

A NEW GRATING-TYPE GOLD-N-TYPE SILICON SCHOTTKY-BARRIER PHOTODIODECHI TONG WANG; SHENG SAN LI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 525-526; BIBL. 13 REF.Serial Issue

A SIMPLE AND ACCURATE METHOD TO MEASURE THE THRESHOLD VOLTAGE OF AN ENHANCEMENT-MODE MOSFETHEE GOOK LEE; SOO YOUNG OH; FULLER G et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 346-348; BIBL. 7 REF.Article

A FAULT-TOLERANT 30 NS/375 MW 16 K X 1 NMOS STATIC RAMHARDEE KC; RAHUL SUD.1981; IEEE J. SOLID. STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 435-443; BIBL. 11 REF.Article

AN INTEGRATED SPEECH SYNTHESIZERMARTIN MJ; GIRARD A; MAJOS J et al.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 3; PP. 163; BIBL. 5 REF.Article

OHMIC CONTACTS IN GAASYODER MN.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 2; PP. 117-119; BIBL. 17 REF.Article

AN ON-CHIP BACK-BIAS GENERATOR FOR MOS DYNAMIC MEMORYMARTINO WL JR; MOENCH JD; BORMANN AR et al.1980; IEEE J. SOLID. STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 820-826; BIBL. 7 REF.Article

  • Page / 133