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Advances in resist technology and processing XV (Santa Clara CA, 23-25 February 1998)Conley, Will.SPIE proceedings series. 1998, isbn 0-8194-2778-0, 2Vol, XVII, 1464 p, isbn 0-8194-2778-0Conference Proceedings

The application of high refractive index photoresist for 32nm device level imagingCONLEY, Will.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65190Q.1-65190Q.8, issn 0277-786X, isbn 978-0-8194-6638-9Conference Paper

Lithographic evaluation of Deep UV photoresists for 0.25 μm and 0.18 μm technologies design rulesAMBLARD, G.SPIE proceedings series. 1998, pp 890-908, isbn 0-8194-2778-0, 2VolConference Paper

A new method of determination of the photoresist Dill parameters using reflectivity measurementsSCHIAVONE, P; BACH, S.SPIE proceedings series. 1998, pp 1251-1257, isbn 0-8194-2778-0, 2VolConference Paper

Effect of processing on surface roughness for a negative-tone, chemically-amplified resist exposed by X-ray lithographyREYNOLDS, G; TAYLOR, J.SPIE proceedings series. 1998, pp 916-923, isbn 0-8194-2778-0, 2VolConference Paper

Optimization of optical parameters for a critical i-Line resist systemBELL, R.SPIE proceedings series. 1998, pp 1160-1170, isbn 0-8194-2778-0, 2VolConference Paper

Negative pattern fabrication using laser exposure of positive photoresistKOBRIN, B; HAGEN, C.SPIE proceedings series. 1998, pp 1426-1435, isbn 0-8194-2778-0, 2VolConference Paper

An examination of develop puddle time and it s effects on lithographic performanceMARKOWSKI, M. S.SPIE proceedings series. 1998, pp 845-859, isbn 0-8194-2778-0, 2VolConference Paper

Synthesis of diazonaphthoquinone (DNQ) photoactive compounds (PACs) using ion exchange resinsOBERLANDER, J; GONZALEZ, E.SPIE proceedings series. 1998, pp 1115-1123, isbn 0-8194-2778-0, 2VolConference Paper

A new design principle for the PACs of novolak resistsJHA, S; REISER, A.SPIE proceedings series. 1998, pp 376-383, isbn 0-8194-2778-0, 2VolConference Paper

Everything you ever wanted to know about why the semiconductor industry needs a high refractive index photoresist...But were afraid to ask, part 1CONLEY, Will; SOCHA, Robert.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6196-2, 2Vol, Part 1, 61531L.1-61531L.9Conference Paper

Conductive Bi-level resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithographyWATANABE, K; IGARASHI, M; YANO, E et al.SPIE proceedings series. 1998, pp 768-775, isbn 0-8194-2778-0, 2VolConference Paper

Effects of a visualization dye in a thick film photoresistJENSEN, K. H; FICNER, S. A.SPIE proceedings series. 1998, pp 1061-1068, isbn 0-8194-2778-0, 2VolConference Paper

Advance of resist profile control in multi-layer resist process for sub-150 nm lithographyKIMURA, Y; ENDO, H; ENDO, A et al.SPIE proceedings series. 1998, pp 347-356, isbn 0-8194-2778-0, 2VolConference Paper

Chemistry of photoresist reclamationNISHIDA, H; NAGAO, Y; IGAWA, A et al.SPIE proceedings series. 1998, pp 1406-1412, isbn 0-8194-2778-0, 2VolConference Paper

Resin fractionation effect for photoresist performanceYAMADA, T; SAITO, Y; ITOH, K et al.SPIE proceedings series. 1998, pp 1069-1080, isbn 0-8194-2778-0, 2VolConference Paper

New dry-developable chemically amplified photoresistKIM, J.-B; HYUNWOO KIM.SPIE proceedings series. 1998, pp 786-793, isbn 0-8194-2778-0, 2VolConference Paper

Lithographic evaluation of a new high performance photoresist compositionMONTGOMERY, W; CALLAN, N; KOZLOWSKI, A et al.SPIE proceedings series. 1998, pp 1314-1322, isbn 0-8194-2778-0, 2VolConference Paper

Photoacid generators in chemically amplified resistsSUZUKI, Y; JOHNSON, D. W.SPIE proceedings series. 1998, pp 735-746, isbn 0-8194-2778-0, 2VolConference Paper

Three-dimensional physical photoresist model calibration and profile-based pattern verificationTALBI, Mohamed; ABDO, Amr Y; SARMA, Chandrasekhar et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7640, issn 0277-786X, isbn 978-0-8194-8054-5 0-8194-8054-1, 76401D.1-76401D.13, 2Conference Paper

High-RI resist polymers for 193 nm immersion lithographyWHITTAKER, Andrew K; BLAKEY, Idriss; HEPING LIU et al.SPIE proceedings series. 2005, isbn 0-8194-5733-7, 2Vol, Part 2, 827-835Conference Paper

Resist materials for 157 nm microlithography: An updateHUNG, Raymond J; TRAN, Hoang V; THOMAS, Brian H et al.SPIE proceedings series. 2001, pp 385-395, isbn 0-8194-4031-0, 2VolConference Paper

The Perfect photoresist for 157nm imagingCONLEY, Will; BYERS, Jeff; DEAN, Kim et al.SPIE proceedings series. 2001, pp 344-349, isbn 0-8194-4031-0, 2VolConference Paper

Trench warfare! (Fitting photons for fine feature fabrication)KUIJTEN, Jan Pieter; CONLEY, Will; SOCHA, Robert et al.SPIE proceedings series. 2001, pp 1058-1065, isbn 0-8194-4032-9, 2VolConference Paper

Chemically amplified resist technology for i-line applicationsTOUKHY, M; MALIK, S; BLAKENEY, A et al.SPIE proceedings series. 1998, pp 1212-1217, isbn 0-8194-2778-0, 2VolConference Paper

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