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CHARACTERIZATION OF THE INTERFACE STATES AT AL-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACE LAYERMORANTE JR; LOUSA A; CARCELLER JE et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 537-538; BIBL. 7 REF.Article

ON THE EVALUATION OF CONTACT TEMPERATURE FROM POTENTIAL-DROP MEASUREMENTSTIMSIT RS.1983; IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOLGY; ISSN 0148-6411; USA; DA. 1983; VOL. 6; NO 1; PP. 115-121; BIBL. 13 REF.Article

SCHOTTKY BARRIER MEASUREMENTS ON P-TYPE IN0,53)GA0,47)ASVETERAN JL; MULLIN DP; ELDER DI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 2; PP. 187-190; BIBL. 9 REF.Article

CALCULATION OF THE DYNAMIC RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATESCOHEN JD; LANG DV.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 5321-5350; BIBL. 34 REF.Article

SCHOTTKY BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINIUM-TITANIUM-GALLIUM ARSENIDE CONTACTSWADA Y; CHINO KI.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 559-564; BIBL. 13 REF.Article

THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGINGMARLOW GS; DAS MB; TONGSON L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 259-266; 7 P.; BIBL. 17 REF.Article

RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTSMORI M.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 81-86; BIBL. 13 REF.Article

THEORIE SANS MODELE DES PHENOMENES D'INJECTION DE CONTACT ET CERTAINES APPLICATIONS DE CELLE-CIZYUGANOV AN; SVECHNIKOV SV.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 99-117; BIBL. 37 REF.Article

CURRENT RESEARCH ON GOLD ALLOY CONTACTS. A REVIEW OF THE ANNUAL HOLM SEMINARANTLER M.1976; GOLD BULL.; S. AFR.; DA. 1976; VOL. 9; NO 1; PP. 22-23Article

SOME TRENDS IN THE USE OF GOLD FOR ELECTRICAL CONTACTSSAEGER KE; VINARICKY E.1975; GOLD BULL.; S. AFR.; DA. 1975; VOL. 8; NO 1; PP. 2-6; BIBL. 11 REF.Article

BREVET 2.154.600 (B) (7234025). A 26 SEPTEMBRE 1972. PROCEDE DE PREPARATION D'ALLIAGES IMPREGNES AYANT UN VOLUME DE PORES TRES FAIBLE, NOTAMMENT DE CONTACTS POUR COMMUTATEURS SOUS VIDEsdPatent

CONTACT LIFE, MATERIAL LAYERING AND FIBERS, SYNTHETIC TESTING, ENCLOSURE MATERIALS. THE SEVENTH INTERNATIONAL CONFERENCE ON CONTACT HELD; PARIS.TURNER HW; TURNER C.1974; ELECTR. TIMES; G.B.; DA. 1974; NO 4297; PP. 8-9Article

SURFACE POLARITONS-PROPAGATING ELECTROMAGNETIC MODES AT INTERFACES. = MODES ELECTROMAGNETIQUES PROPAGEANT LES POLARITONS DE SURFACE AUX INTERFACESBURSTEIN E; CHEN WP; CHEN YJ et al.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 1004-1019; BIBL. 57 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACESMARGARITONDO G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 499-513; BIBL. 84 REF.Article

MASSNAHMEN ZUR EDELMETALLEINSPARUNG BEI DER HERSTELLUNG ELEKTRISCHER KONTAKTE = MESURES A PRENDRE POUR REALISER DES ECONOMIES DE METAUX PRECIEUX DANS LA FABRICATION DES CONTACTS ELECTRIQUESHAUSSLER G; SCHLEGEL H; SCHEIBE H et al.1975; NEUE HUETTE; DTSCH.; DA. 1975; VOL. 20; NO 2; PP. 117-125 (5 P.)Article

POWDER-METALLURGY SOLUTIONS TO ELECTRICAL-CONTACT PROBLEMSSTEVENS AJ.1974; POWDER METALLURGY; G.B.; DA. 1974; VOL. 17; NO 34; PP. 331-346; BIBL. 11 REF.; (SYMP. FACTORS AFFECTING USES PM PROD.; EASTBOURNE; 1974)Conference Paper

RAME-BERILLIO PER CONNETTORI DI CIRCUITI STAMPATI = CUIVRE-BERYLLIUM POUR CONNECTEURS DE CIRCUITS IMPRIMES1972; RAME; ITAL.; DA. 1972; NO 4; PP. 25Article

PROPERTIES OF THE CONTACT ON ION CLEANED N AND P TYPE SILICON SURFACESVIEUJOT TESTEMALE E; PALAU JM; LASSABATERE L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 325-331; BIBL. 31 REF.Article

SYNCHRONISATION MUTUELLE DANS LES STRUCTURES JOSEPHSON MULTICONTACTSOVSYANNIKOV GA; KUZ'MIN LS; LIKHAREV KK et al.1982; RADIOTEH. ELEKTRON.; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 8; PP. 1613-1621; BIBL. 9 REF.Article

JOINING ELECTRIC CONTACTS. ULTRASONICS WORKS FAST = ASSEMBLAGE RAPIDE DES CONTACTS ELECTRIQUES PAR SOUDAGE PAR ULTRASONSDEVINE J.1980; WELD. DES. FABR.; ISSN 0043-2253; USA; DA. 1980; VOL. 53; NO 3; PP. 112-115; LOC. ISArticle

GEGENWAERTIGER STAND DES EINSATZES VON KONTAKTWERKSTOFFEN IN DER FERNMELDETECHNIK = ETAT ACTUEL DE L'APPLICATION DES MATERIAUX DE CONTACT EN TELECOMMUNICATIONMARTIN H.1979; NACHR.-TECH. ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 9; PP. 356-358; ABS. RUS/ENG; BIBL. 4 REF.Article

DEVELOPMENT OF NATURAL" FILMS ON PRECIOUS METAL CONTACTS.FAIRWEATHER A; LAZENBY F; MARR D et al.1976; TRANS. INST. METAL FINISHG; G.B.; DA. 1976; VOL. 54; NO 3; PP. 145-150; BIBL. 11 REF.Article

DIFFICULTIES IN OBSERVING DIRECT OPTICAL EXCITATION OF SI-SIO2 INTERFACE STATES.TONG KY; LAM YW.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 1; PP. L9-L11; BIBL. 5 REF.Article

FLUSH-FILLED PC'S OFFER HIGH RELIABILITY.WHEELER J.1976; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1976; VOL. 16; NO 6; PP. 59-60Article

INTERFACE STATES ON SEMICONDUCTOR-INSULATOR SURFACES.GOETZBERGER A; KLAUSMANN E; SCHULZ MJ et al.1976; C.R.C. CRIT. REV. SOLID STATE SCI.; U.S.A.; DA. 1976; VOL. 6; NO 1; PP. 1-43; BIBL. 2 P. 1/2Article

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