METHODE SIMPLE DE CONTROLE DE L'OHMICITE DES CONTACTS METAL-SEMICONDUCTEURGULYAEV IB; ZHDAN AG.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 2; PP. 203-204; BIBL. 3 REF.Article

BASES PHYSIQUES DE LA PREPARATION DE CONTACTS OHMIQUES METAL-SEMICONDUCTEUR. IISTRIKHA VI; POPOVA GD; BUZANEVA EV et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 20-35; BIBL. 4 P.Article

SCHOTTKY BARRIERS AND PLASMONS.INKSON JC.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 943-946; BIBL. 24 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

ELECTRICAL CHARACTERIZATION OF METAL/IN AS CONTACTS.MILLEA MF; MCCOLL M; SILVER AH et al.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 5; NO 3; PP. 321-340; BIBL. 1 P. 1/2Article

THE INFLUENCE OF HEAT TREATMENT AND AMBIENT ATMOSPHERE ON THE IN-CDS JUNCTION PHOTOVOLTAGE.REED CE; SCOTT CG.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 1; PP. 29-33; BIBL. 9 REF.Article

PREPARATION DE STRUCTURES A BARRIERE DE SURFACE AU TELLURURE DE CADMIUM DE TYPE PUKRAINETS VE; SHNEJDER AD.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 2; PP. 222-224; BIBL. 12 REF.Article

SPECTRES DE PHOTOREPONSE MODULES EN LONGUEUR D'ONDE DES DIODES AU-GAASSYRBU NN; VOLODINA VI; SANDULYAK LP et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 12; PP. 2311-2316; BIBL. 23 REF.Article

ANOMALOUS BEHAVIOUR IN GAN-ZN JUNCTIONS.MORIMOTO Y; USHIO S.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 2; PP. 365-366; BIBL. 1 REF.Article

ATOM MOVEMENTS OCCURING AT SOLID METAL-SEMICONDUCTOR INTERFACES.MCCALDIN YJ.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 990-995; BIBL. 22 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON.THANAILAKIS A.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 5; PP. 655-668; BIBL. 23 REF.Article

DETERMINATION OF SEMICONDUCTOR-METAL CONTACT RESISTANCE BY AN ANGLE-DEPENDENT GEOMETRICAL MAGNETORESISTANCE METHOD.GUTAI L; MOJZES I.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 6; PP. 325-326; BIBL. 4 REF.Article

CHEMICAL BONDING AT METAL-SEMICONDUCTOR INTERFACES.PHILLIPS JC.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 947-950; BIBL. 18 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

GRANULAR METAL-SEMICONDUCTOR SCHOTTKY BARRIERS.WRONSKI CR; ABELES B; DANIEL RE et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 295-299; BIBL. 12 REF.Article

ELEKTRISCHE MESSUNGEN AN NIEDEROHMIGEN METALL-HALBLEITERKONTAKTEN. = MESURES ELECTRIQUES SUR DES CONTACTS METAL-SEMICONDUCTEUR DE FAIBLE VALEUR OHMIQUEPETTER G.1974; Z. ELEKTR. INFORM.-U. ENERGIETECH.; DTSCH.; DA. 1974; VOL. 4; NO 3; PP. 177-180; BIBL. 13 REF.Article

STRUCTURE DES COUCHES ET VARIATIONS DE PHASE DANS LA ZONE DU CONTACT PALLADIUM-SILICIUMDUDKO GV; PILIPENKO AG; TARAKANOV VI et al.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; NO 5; PP. 21-23; H.T. 1; BIBL. 12 REF.Article

PROPRIETES DE REDRESSEMENT D'UN CONTACT AU POINT DE SORTIE D'UNE DISLOCATION A LA SURFACEVINOKUR VM; KRAVCHENKO V YA.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1346-1350; BIBL. 7 REF.Article

A NOTE ON LEVINE'S MODEL OF SCHOTTKY BARRIERS.RHODERICK EH.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2809; BIBL. 5 REF.Article

PARTICULARITES DU COMPORTEMENT D'UN CONTACT METAL-SEMICONDUCTEUR DANS UN PROCESSUS D'IRRADIATION NEUTRONIQUEDUBOVOJ VK; PAVLENKO AA; PINKOVSKAYA MB et al.1979; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1979; NO 29; PP. 24-27; BIBL. 6 REF.Article

SOME INVESTIGATIONS ON VACUUM-EVAPORATED AL-CDSE THIN FILM DIODES.TSUGE H; ONUMA Y.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 11; PP. 1973-1978; BIBL. 18 REF.Article

EVALUATION OF "BARRIER" METALS FOR SINTERED PLATINUM-GAAS CONTACTS.BERENZ JJ; SCILLA GJ; WRICK VL et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 1152-1157; BIBL. 26 REF.Article

DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 169-181; BIBL. 21 REF.Article

THE EFFECT OF PRESSURE ON THE HIGH ELECTRIC FIELD INSTABILITIES IN N-TYPE GAAS.PICKERING C; ADAMS AR; PITT GD et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 2; PP. 129-137; BIBL. 24 REF.Article

CONTRIBUTION A L'ETUDE DE L'EFFET TUNNEL A TRAVERS UN CONTACT METAL-SEMICONDUCTEUR.GUINET C.1975; AO-CNRS-12057; FR.; DA. 1975; PP. 1-121; H.T. 62; (THESE DOCT. SCI.; PIERRE ET MARIE CURIE)Thesis

BETRACHTUNG DES KONTAKTS METALL-AMORPHER HALBLEITER ALS SCHOTTKY-DIODE. = LE CONTACT ENTRE METAL ET SEMICONDUCTEUR AMORPHE CONSIDERE COMME UNE DIODE DE SCHOTTKYSTOETZEL H; KOTTWITZ A.1974; WISSENSCH. Z. TECH. UNIV. DRESDEN; DTSCH.; DA. 1974; VOL. 23; NO 2; PP. 365-373; BIBL. 34 REF.Article

STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPYBARRET C; CHEKIR F; VAPAILLE A et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2421-2438; BIBL. 18 REF.Article