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AU/GE BASED OHMIC CONTACTS TO GAASGROVENOR CRM.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 792-793; BIBL. 20 REF.Article

METHODE SIMPLE DE CONTROLE DE L'OHMICITE DES CONTACTS METAL-SEMICONDUCTEURGULYAEV IB; ZHDAN AG.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 2; PP. 203-204; BIBL. 3 REF.Article

BASES PHYSIQUES DE LA PREPARATION DE CONTACTS OHMIQUES METAL-SEMICONDUCTEUR. IISTRIKHA VI; POPOVA GD; BUZANEVA EV et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 20-35; BIBL. 4 P.Article

A MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS.PELLEGRINI B; SALARDI G.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 791-798; BIBL. 28 REF.Article

OHMIC CONTACTS TO CDS.YAMAGUCHI M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1325-1326; BIBL. 5 REF.Article

PRODUCTION DE CONTACTS OHMIQUES SUR DU GAAS SEMI-ISOLANTFOMIN NG; VOROB'EV YU V; TRETYAK OV et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 3; PP. 222-223; BIBL. 4 REF.Article

CONTACT OHMIQUE AVEC UN MONOCRISTAL DE SILICIUMSEVERDENKO VP; GURSKIJ LI; KOLESHKO VM et al.1972; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1972; NO 2; PP. 71-74; BIBL. 5 REF.Serial Issue

CONTACTS OHMIQUES SUR LES MONOCRISTAUX EN GASBSANDULOVA AV; GONCHAROV VP; SYDIR BI et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 216-218; BIBL. 10 REF.Serial Issue

ZUR FRAGE OHMSCHER KONTAKTE BEI CDS-EINKRISTALLEN = CONTACTS OHMIQUES SUR MONOCRISTAUX DE SULFURE DE CADMIUMENTZIAN W.1972; WISSENSCH. Z. UNIV. ROSTOCK. MATH.-NATURWISSENSCH. REIHE; DTSCH.; DA. 1972; VOL. 20; NO 7; PP. 409-412; ABS. RUSSE ANGL. FR.; BIBL. 13 REF.Serial Issue

A NEW TECHNIQUE FOR FABRICATION OF OHMIC CONTACTS TO GAAS DEVICES.OMPRAKASH.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 3-4; PP. 153-158; BIBL. 15 REF.Article

CONTACTS OHMIQUES SUR SEMICONDUCTEURS DU TYPE A2B6 POUR UNE LARGE GAMME DE TEMPERATUREPEKAR GS; KHANROS LI; SHEJNKMAN MK et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 6; PP. 238-239; BIBL. 9 REF.Article

COMPLEX DISTRIBUTION EFFECTS OF THIN COMPONENT OHMIC-CONTACT LAYERS ON GAAS.WEISS BL; HARTNAGEL HL.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 12; PP. 263-264; BIBL. 5 REF.Article

EXPERIMENTAL EVIDENCE FOR GAAS SURFACE QUALITY AFFECTING OHMIC CONTACT PROPERTIES.PARIA H; HARTNAGEL H.1976; APPL. PHYS.; GERM.; DA. 1976; VOL. 10; NO 1; PP. 97-99; BIBL. 3 REF.Article

OHMIC CONTACTS FOR MODERATELY RESISTIVE P-TYPE INP.SCHIAVONE LM; PRITCHARD AA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 452-453; BIBL. 7 REF.Article

GERMANIUM-DOPED GAAS FOR P-TYPE OHMIC CONTACTS.KETCHOW DR.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1237-1239; BIBL. 5 REF.Article

EXPERIMENTAL VERIFICATION OF NEW GUNN-EFFECT REFLECTION-INSENSITIVE PULSE REGENERATORHARIU T; HARTNAGEL H.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 5; PP. 112-113; BIBL. 4 REF.Serial Issue

RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article

NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS.SEBESTYEN T; HARTNAGEL H; HERRON LH et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 18; PP. 378-373; BIBL. 7 REF.Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

OHMIC CONTACTS ON N+-AND P+-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

OHMIC CONTACTS TO CADMIUM SULPHIDE FILMSALLAN DDM; HAY AJ; REID MA et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 951-954; BIBL. 7 REF.Serial Issue

BRUITS A BASSE FREQUENCE DU COURANT EN UN CONTACT METAL-GERMANIUM PBAREJKIS VA; LIBERIS YU S.1973; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1973; VOL. 13; NO 6; PP. 881-891; ABS. LITU. ANGL.; BIBL. 19 REF.Article

MEASUREMENT OF CONTACT RESISTANCE OF AN OHMIC CONTACT APPLIED TO A HIGH RESISTIVITY PHOTOCONDUCTORMATHUR VK; CHANG CS; LEE CH et al.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 4; PP. 616-618; BIBL. 10 REF.Article

OHMIC CONTACTS TO GAASMITRA RN; ROY SB; DAW AN et al.1979; J. SCI. INDUSTR. RES.; IND; DA. 1979; VOL. 38; NO 8; PP. 410-413; BIBL. 31 REF.Article

Contribution à l'étude des contacts ohmiques sur GaSb de type n et InAs de type pKhald, Hassan; Joullie, A.1989, 110 p.Thesis

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