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THE INFLUENCE OF SODIUM ON THE SI-SIO₂ INTERFACE.DI STEFANO TH; LEWIS JE.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 1020-1024; BIBL. 19 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

ETUDE DE QUELQUES PROPRIETES DU SYSTEME SI-SIO₂ OBTENU PAR DEPOSITION PLASMOCHIMIQUE DU DIOXYDE DE SILICIUMSULIMIN AD; OSTASHKIN LP; NEUSTROEV SA et al.1975; FIZ. KHIM. OBRABET. MATER.; S.S.S.R.; DA. 1975; NO 2; PP. 57-60; BIBL. 6 REF.Article

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EFFET D'UNE IRRADIATION PAR DES ELECTRONS SUR LES PROPRIETES SUPERFICIELLES DE LA STRUCTURE SI-SIO₂KAPLAN GD; KOLESHKO VM; GURSKIJ LI et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 359-362; BIBL. 5 REF.Article

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CORRELATION ENTRE LES PROPRIETES ELECTROPHYSIQUES DU SYSTEME SI-SIO₂ ET LA CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE SILICIUMARSLAMBEKOV VA; SAFAROV A.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 54-60; BIBL. 16 REF.Article

ANNEALING OF SI-SIO₂ INTERFACE STATES USING AR-ION-IMPLANT-DAMAGE-GETTERINGGOLJA B; MASSIBIAN AG.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1249-1254; BIBL. 27 REF.Article

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