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DIFFICULTIES IN OBSERVING DIRECT OPTICAL EXCITATION OF SI-SIO2 INTERFACE STATES.TONG KY; LAM YW.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 1; PP. L9-L11; BIBL. 5 REF.Article

TWO DIMENSIONAL PHASE TRANSITIONS OF MOBILE IONS AT SIO2-SI INTERFACES.WOJTOWICZ PJ.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 1; PP. 132-148; BIBL. 10 REF.Article

QUELQUES PROPRIETES ELECTRIQUES DU SYSTEME OXYDE REACTIF-SILICIUMMOSKAL DN; GORBAN AP; KROPMAN DI et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 19; PP. 25-40; BIBL. 5 REF.Article

EFFET DE LA SOUS-COUCHE DE GEO2 SUR LA CAPTURE DES PORTEURS DE CHARGE DANS LE SYSTEME GERMANIUM-SIO2 PYROLITIQUEZABOTIN VM; KOZLOV SN; PLOTNIKOV GS et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 359-364; BIBL. 13 REF.Article

NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE.RAIDER SI; GDULA RA; PETRAK JR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 150-152; BIBL. 12 REF.Article

THE INFLUENCE OF SODIUM ON THE SI-SIO2 INTERFACE.DI STEFANO TH; LEWIS JE.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 1020-1024; BIBL. 19 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

PHOTO-THERMAL PROBING OF SI-SIO2 SURFACE CENTERS. I. THEORY.PIERRET RF.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 577-591; BIBL. 32 REF.Article

ETUDE DE QUELQUES PROPRIETES DU SYSTEME SI-SIO2 OBTENU PAR DEPOSITION PLASMOCHIMIQUE DU DIOXYDE DE SILICIUMSULIMIN AD; OSTASHKIN LP; NEUSTROEV SA et al.1975; FIZ. KHIM. OBRABET. MATER.; S.S.S.R.; DA. 1975; NO 2; PP. 57-60; BIBL. 6 REF.Article

PHOTO-THERMAL PROBING OF SI-SIO2 SURFACE CENTERS. II. EXPERIMENT.PIERRET RF; ROESNER BB.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 593-603; BIBL. 11 REF.Article

ETUDE DE LA FORMATION D'UNE COUCHE DE CRISTALLISATION DU SILICIUM DANS LE SYSTEME SI-SIO2LITOVCHENKO VG; ZUEV VA; ILYUSHIN BN et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 15; PP. 24-29; BIBL. 14 REF.Article

HIGH-TEMPERATURE ANNEALING OF THE SIO2/GAAS SYSTEM.OHDOMARI I; MIZUTANI S; KUME H et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 218-220; BIBL. 5 REF.Article

PROPERTIES OF THE INTERFACE CHARGE INHOMOGENEITIES IN THE THERMALLY GROWN SI-SIO2 STRUCTURE.ZIEGLER K; KLAUSMANN E.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 678-681; BIBL. 12 REF.Article

EFFET D'UN RAYONNEMENT IONISANT SUR LES ETATS RAPIDES DU SYSTEME SI-SIO2)KIBLIK V YA; LISOVSKIJ IP; LITVINOV RO et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 84-91; BIBL. 14 REF.Article

HOLE PHOTOCURRENTS AND ELECTRON TUNNEL INJECTION INDUCED BY TRAPPED HOLES IN SIO2 FILMS.POWELL RJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4557-4563; BIBL. 20 REF.Article

THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI/SIO2 INTERFACESINGH J; MADHUKAR A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 884-886; BIBL. 11 REF.Article

ELECTRONIC PROPERTIES OF THE SILICON-THERMALLY GROWN TANTALUM OXIDE INTERFACE.REVESZ AG; ALLISON JF.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 5; PP. 527-529; BIBL. 13 REF.Article

EFFET DE REJET DANS LES STRUCTURES ANTIMONIURE D'INDIUM-OXYDEKOVTONYUK NF; SAVKOV GN; VEROV AI et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 2; PP. 196-198; BIBL. 7 REF.Article

SOME PROPERTIES OF THE OXIDES OF THE TETRAHEDRAL SEMICONDUCTORS AND THE OXIDE-SEMICONDUCTOR INTERFACES.PANTELIDES ST.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 965-967; BIBL. 12 REF.Article

CHARACTERISTICS OF SI-SIO2 INTERFACES BENEATH THIN SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI; DEAL BE.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 557-560; BIBL. 7 REF.Article

OXIDATION OF SI SURFACES.HAAS GA; GRAY HF.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3885-3887; BIBL. 23 REF.Article

NEW STUDIES OF THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING.HELMS CR; SPICER WE; JOHNSON NM et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 9; PP. 673-676; BIBL. 12 REF.Article

PARAMAGNETIC DEFECTS IN SILICON/SILICON DIOXIDE SYSTEMS.CAPLAN PJ; HELBERT JN; WAGNER BE et al.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 54; NO 1; PP. 33-42; BIBL. 22 REF.Article

CARRIER GENERATION AT THE SI-SIO2 INTERFACE UNDER PULSED CONDITIONS.ARNOLD E; POLESHUK M.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3016-3018; BIBL. 14 REF.Article

CINETIQUE D'UNE OXYDATION ELECTRONIQUE DU SILICIUM ET PROPRIETES DE LA LIMITE INTERPHASE SI-SIO2KONOROV PP; URITSKIJ V YA; MEL'NITSKIJ VA et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 61-64; BIBL. 11 REF.Article

EFFET D'UNE IRRADIATION PAR DES ELECTRONS SUR LES PROPRIETES SUPERFICIELLES DE LA STRUCTURE SI-SIO2KAPLAN GD; KOLESHKO VM; GURSKIJ LI et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 359-362; BIBL. 5 REF.Article

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