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kw.\*:("CONTACT POTENTIAL")

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Results 1 to 25 of 219

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ETUDE DE L'APPLICATION DE LA METHODE DE KELVIN DE MESURE DE LA DIFFERENCE DE POTENTIEL DE CONTACT A LA CARACTERISATION ELECTRONIQUE DES SURFACES DE CONDUCTEURS ET DE SEMICONDUCTEURSRITTY BERNARD.1979; ; FRA; DA. 1979; 219 P.: ILL.; 30 CM; BIBL. 54 REF.; TH. 3E CYCLE: CHIM. PHYS./MULHOUSE-STRASBOURG 1/1979Thesis

CORRELATION ENTRE LES PROPRIETES ELECTROPHYSIQUES DU SYSTEME SI-SIO2 ET LA CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE SILICIUMARSLAMBEKOV VA; SAFAROV A.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 54-60; BIBL. 16 REF.Article

PIEZOELECTRIC DRIVEN KELVIN PROBE FOR CONTACT POTENTIAL DIFFERENCE STUDIES.BESOCKE K; BERGER S.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 840-842; BIBL. 10 REF.Article

MESURE DES VARIATIONS THERMOSTIMULEES D'UNE DIFFERENCE DE POTENTIEL DE CONTACTLYSENKO VS; TURCHANIKOV VI.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 3; PP. 240-243; BIBL. 10 REF.Article

THE WORK FUNCTION OF CARBURIZED RHENIUMPALLMER PG JR; GORDON RL; DRESSER MJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3776-3779; BIBL. 22 REF.Article

MESURE SIMULTANEE DU POTENTIEL DE CONTACT ET DE LA CONDUCTIVITE D'UN SEMICONDUCTEURKALININ AN; VEDNYJ BI.1977; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1977; NO 1; PP. 242-243; BIBL. 7 REF.Article

NIVEAUX DE CONTACT A LA LIMITE DE 2 SOUS SYSTEMES IDEAUXDARBASYAN AT; KASAMANYAN ZA.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 1; PP. 75-77; ABS. ARM. ANGL.; BIBL. 4 REF.Article

MODIFICATION OF A ROTATING DYNAMIC CAPACITOR FOR CONTACT POTENTIAL DIFFERENCE MEASUREMENTSKURTEV I; KALITZOVA M; SIMOV S et al.1983; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1983; VOL. 16; NO 7; PP. 594-595; BIBL. 8 REF.Article

DISPERSION RELATION APPROACH TO THE X-RAY EDGE PROBLEM = APPROCHE PAR LES RELATIONS DE DISPERSION DU PROBLEME DE LA LIMITE DES RAYONS XPENN DR; GIRVIN SM; MAHAN GD et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 6971-6983; BIBL. 20 REF.Article

MESURES DES TENSIONS DE CONTACT SUR DES STRUCTURES SEMICONDUCTEUR-ISOLANTBUCHHEIM G.1978; EXPER. TECH. PHYS.; DDR; DA. 1978; VOL. 26; NO 5; PP. 507-520; ABS. RUS/ENG; BIBL. 14 REF.Article

CINETIQUE D'ADSORPTION DE L'OXYGENE SUR LE DIOXYDE D'ETAIN PAR DES MESURES DU TRAVAIL DE SORTIE DES ELECTRONS ET PAR THERMOGRAVIMETRIE. II: PROPRIETES ELECTRONIQUES DE LA SURFACE DE SNO2. CINETIQUE DE FIXATION DE L'OXYGENELALAUZE R; COUPUT JP; PIJOLAT C et al.1982; J. CHIM. PHYS. PHYSICOCHIM. BIOL.; ISSN 0021-7689; FRA; DA. 1982; VOL. 79; NO 9; PP. 649-653; ABS. ENG; BIBL. 6 REF.Article

BESTIMMUNG DER AUSTRITTSARBEIT VON ELEKTRODEN MIT ADSORPTIONSSCHICHTEN DURCH KONTAKTPOTENTIALMESSUNG IN DAMPFATMOSPHAERE = DETERMINATION DU TRAVAIL DE SORTIE D'ELECTRODES AVEC COUCHES ADSORBEES EN MESURANT LES DIFFERENCES DE POTENTIEL DE CONTACT SOUS ATMOSPHERE DE VAPEURVON BRADKE M.1979; D.F.V. L.R. FORSCH.-BER.; DEU; DA. 1979; NO 79-22; 205 P.; ABS. ENG; BIBL. 112 REF.Article

THERMALLY STIMULATED CONTACT POTENTIAL DIFFERENCE AS A POSSIBILITY TO DETERMINE THE ENERGY POSITION OF SEMICONDUCTOR SURFACE LEVELSVAVREK A; SIMOV S; KALITZOVA M et al.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 1; PP. 152-160; BIBL. 22 REF.Article

MANIPULATEUR POUR LA MESURE DE LA D.D.P DE CONTACT PAR LA METHODE DE KELVINKOROTKIKH VL; KORINFSKIJ AD; MUSATOV AL et al.1977; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1977; NO 2; PP. 211-212; BIBL. 3 REF.Article

PRECISE DIODE METHOD FOR RECORDING CONTACT POTENTIAL CHANGES CAUSED BY GAS ADSORPTIONCHRISTMANN K; HERTZ H.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 8; PP. 988-992; BIBL. 12 REF.Article

MESURE DE LA DIFFERENCE DE POTENTIEL DE CONTACT DE STRUCTURES MDS EN COINVIRTMANIS AS; FELTYN IA; FREJBERGA LA et al.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 4; PP. 9-14; ABS. ANGL.; BIBL. 7 REF.Article

BERUEHRUNGSSCHUTZ BEI ELEKTRISCHEN ANLAGEN BIS 1000 V = CONTACT SAFETY DEVICE FOR ELECTRICAL SYSTEMS UP TO 1 KVEGYPTIEN HH.1981; BERUFSGENOSSENSCHAFT; DEU; DA. 1981-08; VOL. 8; PP. 434-437; BIBL. 5 REF.Article

WORK FUNCTION OF IRRADIATED REAL AND CLEANED INDIUM ANTIMONIDE SURFACESLEHR S; PAGNIA H.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 83-91; ABS. GER; BIBL. 30 REF.Article

DECHARGES ELECTRIQUES DANS LE VIDE. IMPACT DE MICROPARTICULES SPHERIQUES DE FER DE LA TAILLE DU MICRON SUR DES ELECTRODES POLIES MECANIQUEMENT. II. INFLUENCE DE LA DIFFERENCE DE POTENTIEL DE CONTACT SUR LES ECHANGES DE CHARGE ENTRE MICROPARTICULES ET ELECTRODES.TEXIER C.1978; REV. PHYS. APPL.; FR.; DA. 1978; VOL. 13; NO 4; PP. 165-170; ABS. ANGL.; BIBL. 27 REF.Article

Electrostatic charge monitoring of unlubricated sliding wear of a bearing steelMORRIS, S; WOOD, R. J. K; HARVEY, T. J et al.Wear. 2003, Vol 255, Num 1, pp 430-443, issn 0043-1648, 14 p.Conference Paper

Work function measurements in gas ambientHANSEN, W. N; JOHNSON, K. B.Surface science. 1994, Vol 316, Num 3, pp 373-382, issn 0039-6028Article

Deriving amino acid contact potentials from their frequencies of occurrence in proteins: a lattice model studyTIANA, G; COLOMBO, M; PROVASI, D et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 15, pp 2551-2564, issn 0953-8984, 14 p.Article

Scanning Kelvin probe study of photolabile silane surface modification of indium tin oxideELAINE YEE LING CHAK; PAWLOWSKA, Natalia Maria; BLASZYKOWSKI, Christophe et al.Surface and interface analysis. 2013, Vol 45, Num 9, pp 1347-1352, issn 0142-2421, 6 p.Article

Metal―insulator transition induced by non-stoichiometry of surface layer and molecular reactions on single crystal KTaO3KUBACKI, Jerzy; MOLAK, Andrzej; ROGALA, Maciej et al.Surface science. 2012, Vol 606, Num 15-16, pp 1252-1262, issn 0039-6028, 11 p.Article

Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO2-Si and poly-Si-SiO2-Si structuresPRZEWLOCKI, H. M; KUDLA, A; PISKORSKI, K et al.Thin solid films. 2008, Vol 516, Num 12, pp 4184-4189, issn 0040-6090, 6 p.Article

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