L'ablation laser pulsée pour la synthèse de films supraconducteurs à haute temperature critique = Pulsed laser ablation for HTS thin films synthesisBOUZEHOUANE, K; CONTOUR, J. P.Le Vide (1995). 1998, Vol 54, Num 287, pp 303-330, issn 1266-0167Article

X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAsMASSIES, J; CONTOUR, J. P.Applied physics letters. 1985, Vol 46, Num 12, pp 1150-1152, issn 0003-6951Article

Substrate chemical etching prior to molecular-beam epitaxy: an x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H₂SO₄-H₂O₂-H₂O solutionMASSIES, J; CONTOUR, J. P.Journal of applied physics. 1985, Vol 58, Num 2, pp 806-810, issn 0021-8979Article

An x-ray photoelectron spectroscopy and low-energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAsCONTOUR, J. P; MASSIES, J; D'AVITAYA, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 4, pp 908-910, issn 0734-211XArticle

Residual carbon and oxygen surface contamination of chemically etched GaAs (001) substratesSALETES, A; MASSIES, J; CONTOUR, J. P et al.Japanese journal of applied physics. 1986, Vol 25, Num 1, pp L48-L51, issn 0021-4922, 2Article

Microspot elementary and chemical analyses using combined high energy resolution Auger electron spectroscopy and x-ray photoelectron spectroscopySTAIB, P; CONTOUR, J. P; MASSIES, J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1965-1968, issn 0734-2101Article

Epitaxie d'hétéro-structures d'oxydes supraconducteurs = Heterostructures epitaxy of superconducting oxidesCONTOUR, J. P.Le Vide (1995). 1998, Vol 53, Num 289, issn 1266-0167, 547, 568-584 [18 p.]Conference Paper

Hétérostructures cuprate supraconducteur/oxyde isolant en épitaxie par ablation laser pulsée = Pulsed laser deposition of high Tc superconductor/insulator heterostructuresBOUZEHOUANE, K; CONTOUR, J. P; RAVELOSONA, D et al.Le Vide (1995). 1997, Vol 53, Num 283, issn 1266-0167, 7, 15-34 [21 p.]Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

Surface segregation and growth interface roughening in Al_xGa_1-xAsMASSIES, J; TURCO, F; CONTOUR, J. P et al.Semiconductor science and technology. 1987, Vol 2, Num 3, pp 179-181, issn 0268-1242Article

X-ray photoelectron spectroscopy study of GaAs(001) and InP(001) cleaning procedures prior to molecular beam epitaxyCONTOUR, J. P; MASSES, J; SALETES, A et al.Japanese journal of applied physics. 1985, Vol 24, Num 7, pp L563-L565, issn 0021-4922Article

(GaAl)As tunnel junctions grown by molecular beam epitaxy: intercell ohmic contacts for multiple-band-gap solar cellsCONTOUR, J. P; M'BAYE, A; CHAIX, C et al.Solar cells. 1984, Vol 13, Num 1, pp 67-76, issn 0379-6787Article

Interfaces in {100} epitaxial heterostructures of perovskite oxidesMAURICE, J.-L; IMHOFF, D; CONTOUR, J.-P et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 15, pp 2127-2146, issn 1478-6435, 20 p.Conference Paper

Transport measurements in YBa₂Cu₃O_7-δ/PrBa₂Cu_3-xGa_xO_7-δ superlattices : experimental evidence for underdopingLERIDON, B; DEFOSSEZ, A; DUMONT, J et al.Physica. C. Superconductivity and its applications. 1999, Vol 328, Num 1-2, pp 104-110Article

Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxyGARCIA, J. C; BARSKI, A; CONTOUR, J. P et al.Applied physics letters. 1987, Vol 51, Num 8, pp 593-595, issn 0003-6951Article

Evidence for strontium segregation in La_0.7Sr_0.3MnO₃ thin films grown by pulsed laser deposition: consequences for tunnelling junctionsBERTACCO, R; CONTOUR, J. P; BARTHELEMY, A et al.Surface science. 2002, Vol 511, Num 1-3, pp 366-372, issn 0039-6028Article

Effect of arsenic pressure on donor and acceptor concentration in Si doped MBE GaAs layersCHAIX, C; RADISSON, A; CONTOUR, J.-P et al.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp 1908-1909, issn 0021-4922, 2 p., 1Article

Morphology of GaAs and InP (001) substrates after different preparation procedures prior to epitaxial growthSALETES, A; TURCO, F; MASSIES, J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 2, pp 504-509, issn 0013-4651Article

Realization of a flux-flow DC-transformer using high temperature superconductorsBERGER, S; BOUZEHOUANE, K; CRETE, D et al.EPJ. Applied physics (Print). 1999, Vol 6, Num 2, pp 111-113, issn 1286-0042Article

Penetration depth measurement in high quality YBa₂Cu₃O_7-x thin filmsFARBER, E; DEUTSCHER, G; CONTOUR, J. P et al.The European physical journal. B, Condensed matter physics. 1998, Vol 5, Num 2, pp 159-162, issn 1434-6028Article

Effect of As₄/Ga flux ratio on electrical properties of NID GaAs layers grown by MBESALETES, A; MASSIES, J; NEU, G et al.Electronics Letters. 1984, Vol 20, Num 21, pp 872-874, issn 0013-5194Article

High-spin polarized Co-doped (La,Sr) TiO₃ thin films on high-mobility SrTiO₃ substratesHERRANZ, G; BASLETIB, M; BARTHELEMY, A et al.Journal of magnetism and magnetic materials. 2007, Vol 310, Num 2, pp 2111-2113, issn 0304-8853, 3 p., 3Conference Paper

Epitaxial YBa₂Cu₃O_7-δ/SrTiO₃ heterostructures grown on LaAlO₃ substrate by pulsed laser deposition for voltage tunable microwave filter applicationsWOODALL, P; BOUZEHOUANE, K; MARCILHAC, B et al.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 1150-1153, issn 1051-8223, 1Conference Paper

Frequency agile microwave devices based on Y-Ba-Cu-O/Sr-Ti-O//La-Al-O structureMARCILHAC, B; CRETE, D. G; LEMAITRE, Y et al.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 438-441, issn 1051-8223, 1Conference Paper