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Results 1 to 25 of 55

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L'ablation laser pulsée pour la synthèse de films supraconducteurs à haute temperature critique = Pulsed laser ablation for HTS thin films synthesisBOUZEHOUANE, K; CONTOUR, J. P.Le Vide (1995). 1998, Vol 54, Num 287, pp 303-330, issn 1266-0167Article

X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAsMASSIES, J; CONTOUR, J. P.Applied physics letters. 1985, Vol 46, Num 12, pp 1150-1152, issn 0003-6951Article

Substrate chemical etching prior to molecular-beam epitaxy: an x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solutionMASSIES, J; CONTOUR, J. P.Journal of applied physics. 1985, Vol 58, Num 2, pp 806-810, issn 0021-8979Article

An x-ray photoelectron spectroscopy and low-energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAsCONTOUR, J. P; MASSIES, J; D'AVITAYA, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 4, pp 908-910, issn 0734-211XArticle

Residual carbon and oxygen surface contamination of chemically etched GaAs (001) substratesSALETES, A; MASSIES, J; CONTOUR, J. P et al.Japanese journal of applied physics. 1986, Vol 25, Num 1, pp L48-L51, issn 0021-4922, 2Article

Microspot elementary and chemical analyses using combined high energy resolution Auger electron spectroscopy and x-ray photoelectron spectroscopySTAIB, P; CONTOUR, J. P; MASSIES, J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1965-1968, issn 0734-2101Article

Epitaxie d'hétéro-structures d'oxydes supraconducteurs = Heterostructures epitaxy of superconducting oxidesCONTOUR, J. P.Le Vide (1995). 1998, Vol 53, Num 289, issn 1266-0167, 547, 568-584 [18 p.]Conference Paper

Hétérostructures cuprate supraconducteur/oxyde isolant en épitaxie par ablation laser pulsée = Pulsed laser deposition of high Tc superconductor/insulator heterostructuresBOUZEHOUANE, K; CONTOUR, J. P; RAVELOSONA, D et al.Le Vide (1995). 1997, Vol 53, Num 283, issn 1266-0167, 7, 15-34 [21 p.]Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

A chemical etching process to obtain clean InP {001} surfacesMASSIES, J; TURCO, F; CONTOUR, J.-P et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L664-L667, issn 0021-4922, 2Article

Surface segregation and growth interface roughening in AlxGa1-xAsMASSIES, J; TURCO, F; CONTOUR, J. P et al.Semiconductor science and technology. 1987, Vol 2, Num 3, pp 179-181, issn 0268-1242Article

X-ray photoelectron spectroscopy study of GaAs(001) and InP(001) cleaning procedures prior to molecular beam epitaxyCONTOUR, J. P; MASSES, J; SALETES, A et al.Japanese journal of applied physics. 1985, Vol 24, Num 7, pp L563-L565, issn 0021-4922Article

(GaAl)As tunnel junctions grown by molecular beam epitaxy: intercell ohmic contacts for multiple-band-gap solar cellsCONTOUR, J. P; M'BAYE, A; CHAIX, C et al.Solar cells. 1984, Vol 13, Num 1, pp 67-76, issn 0379-6787Article

Pulsed laser Deposition of epitaxial SrTiO3 films: Growth, structure and functional propertiesKHODAN, A. N; GUYAN, S; CONTOUR, J.-P et al.Thin solid films. 2007, Vol 515, Num 16, pp 6422-6432, issn 0040-6090, 11 p.Conference Paper

Interfaces in {100} epitaxial heterostructures of perovskite oxidesMAURICE, J.-L; IMHOFF, D; CONTOUR, J.-P et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 15, pp 2127-2146, issn 1478-6435, 20 p.Conference Paper

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodesBOWEN, M; BARTHELEMY, A; BIBES, M et al.Physical review letters. 2005, Vol 95, Num 13, pp 137203.1-137203.4, issn 0031-9007Article

Pulsed laser deposition of CeO2 and Ce1-xMxO2 (M = La, Zr) : Application to insulating barrier in cuprate heterostructures : Matériaux Supraconducteurs à haute TcBERGER, S; CONTOUR, J.-P; DROUET, M et al.EPJ. Applied physics (Print). 1998, Vol 1, Num 3, pp 295-299, issn 1286-0042Conference Paper

Nanometer scale mapping of cobalt in Al-doped ferromagnetic Zn0.7Co0.3O thin filmMAURICE, J.-L; RODE, K; ANANE, A et al.EPJ. Applied physics (Print). 2006, Vol 33, Num 2, pp 109-113, issn 1286-0042, 5 p.Article

Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3MAURICE, J.-L; CARRETERO, C; CASANOVE, M.-J et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 9, pp 2209-2214, issn 1862-6300, 6 p.Conference Paper

EELS study of interfaces in magnetoresistive LSMO/STO/LSMO tunnel junctionsSAMET, L; IMHOFF, D; MAURICE, J.-L et al.The European physical journal. B, Condensed matter physics. 2003, Vol 34, Num 2, pp 179-192, issn 1434-6028, 14 p.Article

Strain and magnetism in (La0.7Sr0.3)MnO3 very thin films epitaxially grown on SrTiO3MAURICE, J.-L; PAILLOUX, F; BARTHELEMY, A et al.Applied surface science. 2002, Vol 188, Num 1-2, pp 176-181, issn 0169-4332Conference Paper

Interface magnetism of La0.7Sr0.3MnO3 thin films studied by neutron reflectometryOTT, F; VIRET, M; BORGES, R et al.Journal of magnetism and magnetic materials. 2000, Vol 211, Num 1-3, pp 200-205, issn 0304-8853Conference Paper

Effect of arsenic pressure on donor and acceptor concentration in Si doped MBE GaAs layersCHAIX, C; RADISSON, A; CONTOUR, J.-P et al.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp 1908-1909, issn 0021-4922, 2 p., 1Article

Transport measurements in YBa2Cu3O7-δ/PrBa2Cu3-xGaxO7-δ superlattices : experimental evidence for underdopingLERIDON, B; DEFOSSEZ, A; DUMONT, J et al.Physica. C. Superconductivity and its applications. 1999, Vol 328, Num 1-2, pp 104-110Article

Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxyGARCIA, J. C; BARSKI, A; CONTOUR, J. P et al.Applied physics letters. 1987, Vol 51, Num 8, pp 593-595, issn 0003-6951Article

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