MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

THE BURIED CHANNEL CHARGE COUPLED DEVICEWALDEN RH; KRAMBECK RH; STRAIN RJ et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Serial Issue

DIRECT OBSERVATION OF THE DEPLETION LAYER IN A MULTICHANNEL VERTICAL J.F.E.T. (M.J.F.E.T.).OGAWA H; ABE A; NAKAJIMA T et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 223-225; BIBL. 4 REF.Article

DEPLETION-LAYER CHARACTERISATION OF SINGLE-DIFFUSED P-N JUNCTIONS.BASAVARAJ TN; BHATTACHARYYA AB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 765-767; BIBL. 11 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N JUNCTIONSBHATTACHARYA AB; BASAVARAJ TN.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 467-476; BIBL. 31 REF.Serial Issue

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. II. TERMINAL CHARACTERISTICS.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 481-488; BIBL. 16 REF.Article

ON THE ACCURACY OF THE DEPLETION LAYER APPROXIMATION FOR CHARGE COUPLED DEVICES.MCKENNA J; SCHRYER NL.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 51; NO 7; PP. 1471-1485; BIBL. 9 REF.Article

DEPLETION LAYER CHARACTERISTICS AT THE SURFACE OF BEVELED HIGH-VOLTAGE P-N JUNCTIONSBAKOWSKI M; LUNDSTROM KI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 550-563; BIBL. 18 REF.Serial Issue

CALCULATION OF AVALANCHE BREAKDOWN VOLTAGE AND DEPLETION LAYER THICKNESS IN A P-N JUNCTION WITH A DOUBLE ERROR FUNCTION DOPING PROFILEBAKOWSKI M; LUNDSTROM I.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 611-616; BIBL. 6 REF.Serial Issue

X-RAY IMAGING WITH A CHARGE-COUPLED DEVICE FABRICATED ON A HIGH-RESISTIVITY SILICON SUBSTRATEPECKERAR MC; MCCANN DH; YU L et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 55-57; BIBL. 9 REF.Article

NATURE DES COUCHES APPAUVRIES A LA SURFACE DE L'ARSENIURE DE GALLIUM DANS LES SYSTEMES MDSSEMUSHKINA NA; MARAKHONOV VM; SEJSYAN RP et al.1976; FIZ.-TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 3; PP. 490-496; BIBL. 17 REF.Article

EFFECT OF MOBILE CHARGE CARRIERS ON JUNCTION POTENTIAL DISTRIBUTION, FIELD DISTRIBUTION AND CAPACITANCE.CHANDRA SHEKHAR; SHARMA SK; SUMAN KUMAR et al.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 10; PP. 511-515; BIBL. 1 REF.Article

MIS ARRAY POTENTIAL CALCULATIONCHANG WH.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 491-496; BIBL. 11 REF.Serial Issue

ON THE CONDITION OF STRONG INVERSION AND TERMINAL VOLTAGES IN MOS STRUCTURES WITH NONUNIFORM AND DEGENERATE DOPINGRITU SHRIVASTAVA; MARSHAK AH.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 1009-1013; BIBL. 9 REF.Article

ELECTRICAL CHARACTERISTICS OF DEPLETRIN-TYPE SOS MOS DEVICESONGA S; KO WH; HATANAKA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1675-1682; BIBL. 12 REF.Article

ELECTRON BEAM INDUCED CURRENT STUDIES OF MS AND MIS DEVICES ON CDSRUSSELL GJ; ROBERTSON MJ; WOODS J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. 253-262; ABS. GER; BIBL. 12 REF.Article

TIME DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURESSAKS NS; NORDBRYHN A.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6962-6968; BIBL. 15 REF.Article

EFFECTS OF DEPLETION-LAYER MODULATION ON SPURIOUS OSCILLATIONS IN IMPATT DIODES.TANG P; HADDAD GI.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 734-741; BIBL. 5 REF.Article

NOVEL CHARGE-STORAGE-DIODE STRUCTURE FOR USE WITH LIGHT-ACTIVATED DISPLAYS.FRAAS LM; GRINBERG J.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 576-583; BIBL. 8 REF.Article

THE VALIDITY OF THE DEPLETION APPROXIMATION APPLIED TO A BULK CHANNEL CHARGE-COUPLED DEVICE.DALE B.1976; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 2; PP. 275-282; BIBL. 8 REF.Article

PHOTOELECTRIC PROPERTIES OF STRUCTURES UNDER NON-EQUILIBRIUM DEEP DEPLETION CONDITIONS.PEYKOV PH; VITKOV AL.1975; C.R. ACAD. BULG. SCI.; BULG.; DA. 1975; VOL. 28; NO 10; PP. 1319-1322; BIBL. 4 REF.Article

EFFECTS OF PARASITIC ELEMENTS ON THE SECOND-HARMONIC METHOD = EFFETS D'ELEMENTS PARASITES SUR LA METHODE DE SECOND HARMONIQUESCHIBLI EG.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 5; PP. 679-687; BIBL. 2 REF.Serial Issue

PROCESSUS DE GENERATION DANS LES STRUCTURES MIS EN INSB EN REGIME D'APPAUVRISSEMENT HORS D'EQUILIBREKURYSHEV GL; KHALIULLIN NI; POSTNIKOV KO et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 4; PP. 654-658; BIBL. 5 REF.Article