Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("COUCHE APPAUVRISSEMENT")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1144

  • Page / 46

Export

Selection :

  • and

MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

THE BURIED CHANNEL CHARGE COUPLED DEVICEWALDEN RH; KRAMBECK RH; STRAIN RJ et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Serial Issue

CAPACITIVE EQUIVALENT CIRCUIT OF THE DEPLETION LAYER OF A MOS TRANSISTOR USED FOR DETERMINATION OF IMPURITY CONCENTRATION NEAR INSULATOR-SEMICONDUCTOR INTERFACE.LE BLOA A; FORTIN B.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 653-662; ABS. FR.; BIBL. 7 REF.Article

DEPLETION REGION THICKNESSES IN DIFFUSED JUNCTIONSSTEVENS EH.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 7; PP. 659-660; BIBL. 7 REF.Serial Issue

RESEARCH NOTES: DEPLETION WIDTH FOR INHOMOGENEOUSLY DOPED P-N JUNCTIONJAIN YK; SHARMA SC.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 285-287; BIBL. 2 REF.Serial Issue

DIRECT OBSERVATION OF THE DEPLETION LAYER IN A MULTICHANNEL VERTICAL J.F.E.T. (M.J.F.E.T.).OGAWA H; ABE A; NAKAJIMA T et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 223-225; BIBL. 4 REF.Article

DEPLETION-LAYER CHARACTERISATION OF SINGLE-DIFFUSED P-N JUNCTIONS.BASAVARAJ TN; BHATTACHARYYA AB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 765-767; BIBL. 11 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N JUNCTIONSBHATTACHARYA AB; BASAVARAJ TN.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 467-476; BIBL. 31 REF.Serial Issue

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

HETEROJONCTION DANS LES CONDITIONS D'APPAUVRISSEMENT NON STATIONNAIREVLASENKO EV; SURIS RA.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1353-1359; BIBL. 4 REF.Article

PHOTOCAPACITANCE EFFECTS AT A CU2S-CDS HETEROJUNCTIONLINDQUIST PF; BUBE RH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2839-2850; BIBL. 13 REF.Serial Issue

THE EFFECTS OF RADIATION DAMAGE ON THE PROPERTIES OF NI-NGAAS SCHOTTKY DIODES. II. TERMINAL CHARACTERISTICS.TAYLOR PD; MORGAN DV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 481-488; BIBL. 16 REF.Article

ON THE ACCURACY OF THE DEPLETION LAYER APPROXIMATION FOR CHARGE COUPLED DEVICES.MCKENNA J; SCHRYER NL.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 51; NO 7; PP. 1471-1485; BIBL. 9 REF.Article

DEPLETION LAYER CHARACTERISTICS AT THE SURFACE OF BEVELED HIGH-VOLTAGE P-N JUNCTIONSBAKOWSKI M; LUNDSTROM KI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 550-563; BIBL. 18 REF.Serial Issue

CALCULATION OF AVALANCHE BREAKDOWN VOLTAGE AND DEPLETION LAYER THICKNESS IN A P-N JUNCTION WITH A DOUBLE ERROR FUNCTION DOPING PROFILEBAKOWSKI M; LUNDSTROM I.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 611-616; BIBL. 6 REF.Serial Issue

X-RAY IMAGING WITH A CHARGE-COUPLED DEVICE FABRICATED ON A HIGH-RESISTIVITY SILICON SUBSTRATEPECKERAR MC; MCCANN DH; YU L et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 55-57; BIBL. 9 REF.Article

NATURE DES COUCHES APPAUVRIES A LA SURFACE DE L'ARSENIURE DE GALLIUM DANS LES SYSTEMES MDSSEMUSHKINA NA; MARAKHONOV VM; SEJSYAN RP et al.1976; FIZ.-TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 3; PP. 490-496; BIBL. 17 REF.Article

EFFECT OF MOBILE CHARGE CARRIERS ON JUNCTION POTENTIAL DISTRIBUTION, FIELD DISTRIBUTION AND CAPACITANCE.CHANDRA SHEKHAR; SHARMA SK; SUMAN KUMAR et al.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 10; PP. 511-515; BIBL. 1 REF.Article

MIS ARRAY POTENTIAL CALCULATIONCHANG WH.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 491-496; BIBL. 11 REF.Serial Issue

FIELD-DEPENDENT TRANSPORT THROUGH THE DEPLETION LAYER OF A SEMICONDUCTING ELECTRODETHOMCHICK J; BUONCRISTIANI AM.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7296-7303; BIBL. 10 REF.Article

PRACTICAL ASPECTS OF THE DEPLETION ETCH METHOD IN HIGH-VOLTAGETEMPLE VAK.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 977-982; BIBL. 10 REF.Article

THEORETICAL AND EXPERIMENTAL STUDY OF BEVELED THYRISTOR STRUCTURESCOUVREUR P; VAN DE WIELE F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 967-971; BIBL. 6 REF.Article

LSI AND RELATED DEVICES. I.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 231-251; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

THEORETICAL STUDY OF THE DEPLETION-LAYER CAPACITANCE IN ABRUPT P-N SEMICONDUCTOR JUNCTIONS.WEINHAUSEN G.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 2; PP. 517-525; ABS. GER; BIBL. 14 REF.Article

  • Page / 46