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THE EFFECT OF A BURIED LAYER ON THE COLLECTOR BREAKDOWN VOLTAGES OF BIPOLAR JUNCTION TRANSISTORSHEWLETT FW JR; LINDHOLM FA; BRODERSEN AJ et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 453-457; H.T. 1; BIBL. 7 REF.Serial Issue

BURRIED-GUARDED LAYER ION-IMPLANTED RESISTORSSEIDEL TE; GIBSON WC.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 8; PP. 744-748; BIBL. 8 REF.Serial Issue

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INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

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ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article

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