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FORMATION OF A LONG-WAVELENGTH BURIED-CRESCENT LASER STRUCTURE ON CHANNELLED SUBSTRATESMURRELL DL; WALLING RH; HOBBS RE et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 209-213; BIBL. 15 REF.Article

OUTPUT POWER SATURATION OF BH LASER UNDER HIGH CURRENT OPERATIONNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 501-502; BIBL. 4 REF.Article

PULSATING OUTPUT OF SEPARATE CONFINEMENT BURIED OPTICAL GUIDE LASERS DUE TO THE DELIBERATE INTRODUCTION OF SATURABLE LOSSVAN DER ZIEL JP; TSANG WT; LOGAN RA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 5; PP. 376-378; BIBL. 17 REF.Article

IMPURITY PROFILE IN SILICON EPITAXIAL WAFER WITH BURIED LAYERS.MITSUHASHI G.1975; N.E.C. RES. DEVELOP.; JAP.; DA. 1975; NO 36; PP. 68-74; BIBL. 4 REF.Article

CURRENT MULTIPLICATION RATE AT THE PERIPHERIES OF BURIED JUNCTIONS.TAKUMIYA S; KONDO A; SHIRAHATA K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 4; PP. 743-744; BIBL. 4 REF.Article

BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTIONHARDER C; LAU KY; YARIV A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 5; PP. 382-384; BIBL. 10 REF.Article

HIGH-POWER LEAKY-MODE MULTIPLE-STRIPE LASERACKLEY DE; ENGELMANN RWH.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 27-29; BIBL. 8 REF.Article

THE CW ELECTRO-OPTICAL PROPERTIES OF (AL, GA) AS MODIFIED-STRIP BARIED-HETEROSTRUCTURE LASERSHARTMAN RL; LOGAN RA; KOSZI LA et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1909-1918; BIBL. 44 REF.Article

THE EFFECT OF A BURIED LAYER ON THE COLLECTOR BREAKDOWN VOLTAGES OF BIPOLAR JUNCTION TRANSISTORSHEWLETT FW JR; LINDHOLM FA; BRODERSEN AJ et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 453-457; H.T. 1; BIBL. 7 REF.Serial Issue

BURRIED-GUARDED LAYER ION-IMPLANTED RESISTORSSEIDEL TE; GIBSON WC.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 8; PP. 744-748; BIBL. 8 REF.Serial Issue

SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE INDEX DUE TO CARRIER INJECTION IN GAAS LASERSHENRY CH; LOGAN RA; BERTNESS KA et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4457-4461; BIBL. 16 REF.Article

GAAS-ALXGAL-XAS STRIP BURIED HETEROSTRUCTURE LASERSTSANG WT; LOGAN RA.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 6; PP. 451-469; BIBL. 44 REF.Article

SINGLE MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATIONHENRY CH; LOGAN RA; MERRITT FR et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 11; PP. 2196-2204; BIBL. 9 REF.Article

BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATESBAR CHAIM N; KATZ J; URY I et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 108-109; BIBL. 8 REF.Article

A CLOSELY SPACED (50 MU M) ARRAY OF 16 INDIVIDUALLY ADDRESSABLE BURIED HETEROSTRUCTURE GAAS LASERSVAN DER ZIEL JP; LOGAN RA; MIKULYAK RM et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 9-11; BIBL. 10 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUECHUNG YIH CHEN; SHYH WANG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 634-636; BIBL. 12 REF.Article

BURIED-HETEROSTRUCTURE ALGAAS LASERSSAITO K; ITO R.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 205-215; BIBL. 29 REF.Article

EFFECT OF CAVITY LENGTH ON 1.55 MU M BURIED-HETEROSTRUCTURE DH LASER CHARACTERISTICSTOKUNAGA M; NAKANO Y; TAKAHEI K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 234-236; BIBL. 10 REF.Article

BURIED HETEROSTRUCTURE LASERS IN THE GAINASP SYSTEM: DESIGNBUUS J.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 10; PP. 1884-1885; BIBL. 4 REF.Article

LOW-THRESHOLD CURRENT CW OPERATION OF MULTIPLE INFIL BURIED HETEROSTRUCTURE 1.3 MU MGALNASP LASERSPLASTOW R; HARDING M; GRIFFITH I et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 262-263; BIBL. 3 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU MDEVLIN WJ; WALLING RH; FIDDYMENT PJ et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 651-653; BIBL. 5 REF.Article

MODE LOCKING OF STRIP BURIED HETEROSTRUCTURE (ALGA)AS LASERS USING AN EXTERNAL CAVITYVAN DER ZIEL JP; MIKULYAK RM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3033-3037; BIBL. 24 REF.Article

ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article

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