ON THE TECHNIQUE AND EVALUATION OF ANGLE-BEVELING SILICON EPITAXIAL LAYERS.SEVERIN PJ; BULLE H; POODT G et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 440-443; BIBL. 12 REF.Article

SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING FAULTS IN AN EPITAXIAL SILICON LAYER.KATO T; KOYAMA H; MATSUKAWA T et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3732-3737; BIBL. 13 REF.Article

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NUCLEATION AND GROWTH OF STACKING FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATIONHSIEH CM; MAHER DM.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1302-1306; BIBL. 17 REF.Serial Issue

MEASUREMENT OF STRAIN AND LATTICE PARAMETER IN EPITAXIC LAYERS.HART M; LLOYD KH.1975; J. APPL. CRYSTALLOGR.; DENM.; DA. 1975; VOL. 8; NO 1; PP. 42-44; BIBL. 4 REF.Article

PROCESSUS DE LA CROISSANCE DES CRISTAUX ET DES FILMS PAR LA METHODE DE L'EPITAXIE COMBINEE GAZ-LIQUIDEKRAVCHENKO VS; BUDZHAN YA M; KOSYAKOV VI et al.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 78-95; BIBL. 1 P. 1/2Article

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TRIMETHYLSTIBINE AS A SOURCE OF SB FOR DOPING EPITAXIAL SI LAYERS.MANASEVIT HM; SIMPSON WI; ERDMANN FM et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 7; PP. 967-968; BIBL. 4 REF.Article

DETERMINATION OF THE STRUCTURE OF SUCCESSIVE BY DEPOSITED ORDERED LAYERS OF CD ON TI (0001) BY LOW-ENERGY ELECTRON DIFFRACTION.SHIH HD; JONA F; JEPSEN DW et al.1976; COMMUNIC. PHYS.; G.B.; DA. 1976; VOL. 1; NO 1; PP. 25-31; BIBL. 6 REF.Article

SILICON EPITAXIAL GROWTH BY ELECTRODEPOSITION FROM MOLTEN FLUORIDES.COHEN U; HUGGINS RA.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 3; PP. 381-383; BIBL. 3 REF.Article

A NEW METHOD FOR LIQUID PHASE EPITAXY.STAREEV GD.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 189-196; BIBL. 12 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF GAAS CRYSTALS UNDER A MIXED GAS ATMOSPHERE.OTSUBO M; MIKI H.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 5; PP. 621-627; BIBL. 31 REF.Article

LIQUID-PHASE EPITAXIAL GROWTH OF THIN GAAS LAYERS FROM SUPERCOOLED SOLUTIONS.MIHARA M; TOYODA N; HARA T et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 131-133; BIBL. 4 REF.Article

LOW CARBON CONTAMINATION OF EPITAXIAL GERMANIUM FILMS PRODUCED BY PYROLYSIS OF ALKYL GERMANIUM COMPOUNDS.AVIGAL Y; ITZHAK D; SCHIEBER M et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1226-1229; BIBL. 21 REF.Article

OXIDATION STACKING FAULTS IN EPITAXIAL SILICON CRYSTALS.CONTI M; CORDA G; MATTEUCCI R et al.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 4; PP. 705-713; BIBL. 27 REF.Article

THE GROWTH OF EUTECTIC SILICON-CONTRIBUTIONS TO UNDERCOOLING.STEEN HAH; HELLAWELL A.1975; ACTA METALLURG.; E.U.; DA. 1975; VOL. 23; NO 4; PP. 529-535; ABS. FR. ALLEM.; BIBL. 23 REF.Article

CROISSANCE EPITAXIQUE DE DEPOTS DE TANTALE SUR TANTALE AU COURS DE LA DECOMPOSITION THERMIQUE DE CHLORURE GAZEUX.PIQUARD G; CARADEC JY; WEBER B et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 3; PP. 367-372; ABS. ANGL.; BIBL. 12 REF.Article

CROISSANCE EPITAXIQUE DE COUCHES MINCES D'ALN PAR EVAPORATION REACTIVEYOSHIDA S; MISAWA S.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 11; PP. 1210-1214; BIBL. 20 REF.Article

ETUDE DE LA CINETIQUE DE CRISTALLISATION DES COUCHES EPITAXIQUES DE CARBURE DE SILICIUM A PARTIR DE LA PHASE GAZEUSESAFARALIEV GK; TAIROV YU M; TSVETKOV VF et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 5; PP. 1004-1007; H.T. 1; BIBL. 8 REF.Article

METHODES ET INSTALLATIONS POUR LA CROISSANCE DES COUCHES EPITAXIQUES EN PHASE LIQUIDE. (REVUE)MARKOV FV; VIGDOROVICH VN.1975; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1975; NO 5; PP. 56-61; BIBL. 21 REF.Article

MICROMANIPULATEUR POUR MESURE DE LA DISTRIBUTION D'IMPURETES DANS LES COUCHES EPITAXIALES DES SEMI-CONDUCTEURSSMIRNOV YU S; CHERENKOV SS.1975; ZAVODSK. LAB.; S.S.S.R.; DA. 1975; VOL. 41; NO 7; PP. 819-820; BIBL. 2 REF.Article

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STACKING FAULT STRUCTURES IN CARBON-CONTAMINATED LOW-TEMPERATURE EPITAXIAL SILICON.ODGEN R; BRADLEY RR; WATTS BE et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 1; PP. 135-146; ABS. ALLEM.; BIBL. 27 REF.Article

SUBSTRATE EFFECTS IN AUTOEPITAXIAL THICK FILMS OF SINGLE-CRYSTAL ZINC SULPHIDE.JONES PL.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 13; PP. L147-L151; BIBL. 12 REF.Article

ESFI-MOS-SPEICHER MIT HOHER INTEGRATIONSDICHTE. = MEMOIRES A MOS-ESFI AVEC HAUTE DENSITE D'INTEGRATION1974; INTERNATION. ELEKTRON. RDSCH.; DTSCH.; DA. 1974; VOL. 28; NO 8; PP. 164; ABS. ANGL. FRArticle