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Results 1 to 25 of 1824

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NOVAYA ZEMLYA EFFECT: ANALYSIS OF AN OBSERVATIONLEHN WH; GERMAN BA.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 12; PP. 2043-2047; BIBL. 9 REF.Article

EXPLORATION DES BASSES COUCHES DE L'ATMOSPHERE AU MOYEN D'UN SODARCAPUT C; GAUTHIER D; HAULET R et al.1978; COMMISSAR. ENERG. ATOM., BULL. INFORM. SCI. TECH.; FRA; DA. 1978 PUBL. 1979; NO 230-231; PP. 77-79; ABS. ENGArticle

AEROSOL OBSERVATIONS OVER THE ICE CAPS.HOGAN AW; NELSON D.1975; ANTARCT. J.U.S.; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 310-312; BIBL. 7 REF.Article

DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS.ARNOLD E.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 12; PP. 705-707; BIBL. 12 REF.Article

SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERSSTERN F.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 12; PP. 4891-4899; BIBL. 24 REF.Serial Issue

A QUANTUM MODEL OF INVERSION LAYERS IN DOPED SEMICONDUCTOR SURFACES.GEORGIEV VK.1977; BULG. J. PHYS.; BULG.; DA. 1977; VOL. 4; NO 2; PP. 146-156; ABS. RUSSE; BIBL. 5 REF.Article

ELECTRON-ELECTRON INTERACTIONS IN THE SURFACE INVERSION LAYER OF A SEMICONDUCTOR.LEE TK; TING CS; QUINN JJ et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 12; PP. 1309-1312; BIBL. 13 REF.Article

OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS.HARTSTEIN A; FOWLER AB.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 23; PP. 1435-1437; BIBL. 7 REF.Article

CARACTERISTIQUES D'UNE INVERSION DE TEMPERATURE AU SOL EN JAKOUTIEBEZUGLYJ IM; ALEKSEEV AA.1975; VEST. LENINGRAD. UNIV.; S.S.S.R.; DA. 1975; NO 18; PP. 104-107; ABS. ANGL.; BIBL. 3 REF.Article

ACOUSTIC SOUNDING IN THE LOWER TROPOSPHERE.SINGAL SP.1974; J. SCI. INDUSTR. RES.; INDIA; DA. 1974; VOL. 33; NO 4; PP. 162-167; BIBL. 32 REF.Article

NOISE IN INVERSION LAYERS NEAR THE METAL-INSULATOR TRANSITIONADKINS CJ; KOCH RH.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 8; PP. 1829-1839; BIBL. 24 REF.Article

METEOROLOGICAL UTILISATION OF HORIZONTAL MICROWAVE PROPAGATION MEASUREMENTSCAPORALONI M; AMBROSINI R; TOMASSETTI G et al.1981; CHEMOSPHERE; ISSN 0366-7111; GBR; DA. 1981; VOL. 10; NO 5; PP. 461-467; BIBL. 4 REF.Article

THE INFLUENCE OF HELICOPTER FLIGHTS ON SURFACE (1.5 M) AIR TEMPERATURES UNDER INVERSION CONDITIONSHEINE RW; WRATT DS.1980; N.Z.J. SCI.; ISSN 0028-8365; NZL; DA. 1980 PUBL. 1981; VOL. 23; NO 4; PP. 353-359; BIBL. 11 REF.Article

INTERVALLEY TRANSITIONS IN INVERSION LAYERS.DOHLER GH.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 903-907; BIBL. 12 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

THE CAPACITANCE OF LARGE BARRIER SCHOTTKY DIODES.GREEN MA.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 421-422; BIBL. 10 REF.Article

COUCHE D'INVERSION DE LA TROPOSPHERE EN ETE AU-DESSUS DU DETROIT DE DRAKEBOBROV SG; KAZAKOVA NN; NIKONOV VI et al.1976; TR. ARKT. ANTARKT. NAUCNO-ISSLED. INST.; ISSN 500461; SUN; DA. 1976; VOL. 344; PP. 88-91; BIBL. 2 REF.Article

EVIDENCE FOR A MOBILITY EDGE IN INVERSION LAYERS. II.STERN F.1974; J. VACUUM. SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 962-964; BIBL. 25 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

INLAND PENETRATION OF THE SUMMER INVERSION FROM THE MEDITERRANEAN COAST IN ISRAEL.HALEVY G; STEINBERGER EH.1974; ISRAEL J. EARTH-SCI.; ISRAEL; DA. 1974; VOL. 23; NO 1-2; PP. 47-54; BIBL. 12 REF.Article

ANISOTROPIC RELAXATION TIME IN QUANTIZED (110) SILICON INVERSION LAYERS.NELSON AR.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 2935-2937; BIBL. 11 REF.Article

HALL VOLTAGE DEPENDENCE ON INVERSION-LAYER GEOMETRY IN THE QUANTUM HALL-EFFECT REGIMERENDELL RW; GIRVIN SM.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6610-6614; BIBL. 8 REF.Article

FREQUENCE ET INTENSITE DES INVERSIONS AU SOL DANS LE PRE-KHANGAIBERESNEVA IA.1980; TRUDY GLAVN. GEOFIZ. OBS. A. I. VOEJKOVA, LENINGRAD; SUN; DA. 1980; NO 426; PP. 140-146; BIBL. 6 REF.Article

LANDAU INTERACTION FUNCTION FOR ELECTRONS IN THE SURFACE INVERSION LAYER OF A SEMICONDUCTOR. A TEST OF MANY-BODY THEORY.LEE TK; TING CS; QUINN JJ et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 35; NO 15; PP. 1048-1050; BIBL. 7 REF.Article

TRANSFERT D'ELECTRONS ET QUANTIFICATION EN SURFACE DANS DES COUCHES D'INVERSION DE SURFACE DANS LE SILICIUMSAKAKI H; SUGANO T.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 11; PP. 1131-1152; ABS. ANGL.; BIBL. 130 REF.Article

INVERSION LAYER AT THE INTERFACE OF SCHOTTKY DIODES.DEMOULIN E; VAN DE WIELE F.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 825-833; ABS. FR.; BIBL. 25 REF.Article

THEORY OF OSCILLATORY G FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC FIELDS.ANDO T; UEMURA Y.1974; J. PHYS. SOC. SOC. JAP.; JAP.; DA. 1974; VOL. 37; NO 4; PP. 1044-1052; BIBL. 17 REF.Article

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