THE TRANSIENT LAYER IN MAGNETIC GARNET FILMS GROWN BY LIQUID PHASE EPITAXY.DAVIES JE; GIESS EA; KUPTSIS JD et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 65-69; BIBL. 8 REF.Article

ELEMENT SEPARATION IN A PLASMA-GAS TRANSITION LAYERNOCENTINI A; ENGELMANN F.1981; ASTROPHYS. SPACE SCI.; ISSN 0004-640X; NLD; DA. 1981; VOL. 76; NO 2; PP. 371-383; BIBL. 10 REF.Article

DISTRIBUTION DES IMPURETES DANS LA COUCHE SUPERFICIELLE DU SILICIUM LORS DE LA DIFFUSION DE PHOSPHORE A TRAVERS UNE COUCHE D'OXYDE POREUSEKOLTUN MM; MAKAROVA ES; GAVRILOVA IP et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 161-165; BIBL. 9 REF.Article

LA COUCHE DE PASSAGE DANS LES STRUCTURES AUTOEPITAXIQUESLAVRENT'EVA LG; VILISOVA MD.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 58-77; BIBL. 1 P. 1/2Article

ETUDE DES FREQUENCES DE RESONANCE DE CONVERTISSEURS PIEZOCERAMIQUES CYLINDRIQUES AVEC UNE COUCHE DE TRANSITIONCHESSKIJ YU V.1982; AKUSTICESKIJ ZURNAL; ISSN 504726; SUN; DA. 1982; VOL. 28; NO 6; PP. 827-834; BIBL. 7 REF.Article

ZERO-BIAS CONDUCTANCE DIP AND PHONON FEATURES IN THE SUPERCONDUCTOR DENSITY OF STATES OBSERVED ON TANTALUM- AND NIOBIUM-BASED TUMELING JUNCTIONSHAHN A; EKRUT H; WESTPHAL M et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 1; PP. 138-147; BIBL. 26 REF.Article

KINETICS OF THE INITIAL STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL GROWTH.LIAU ZL; CAMPISANO SU; CANALI C et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1696-1699; BIBL. 9 REF.Article

THEORETICAL RESISTIVITY SOUNDING RESULTS OVER A TRANSITION LAYER MODEL.SRI NIWAS; UPADHYAY SK.1974; GEOPHYS. PROSPECTG; NETHERL.; DA. 1974; VOL. 22; NO 2; PP. 279-296; BIBL. 10 REF.Article

COUCHE DE TRANSITION DE LA PHOSTOSPHERE A LA CHROMOSPHERE PRES D'ERUPTIONS SOLAIRESDUBOV EH E.1981; ASTR. ZH.; ISSN 0004-6299; SUN; DA. 1981; VOL. 58; NO 4; PP. 904-906; ABS. ENG; BIBL. 6 REF.Article

JONCTION SANS DISLOCATIONS DE DEUX CRISTAUXGUBANOV AI.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 9; PP. 2724-2728; BIBL. 9 REF.Article

THICKNESS EVALUATION OF SI/SIO₂ INTERFACES BY HE-BACKSCATTERING EXPERIMENTS.OFFERMANN P.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1890-1894; BIBL. 26 REF.Article

TRANSITION REGIONS IN EPITAXIAL FILMS.ALEKSANDROV LN.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. 11-43; BIBL. 3 P.Article

COMMENTS ON "TRANSITION LAYER ON THE SURFACE OF ICE" BY D. BEAGLEHOLE AND D. NASONFLETCHER NH.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 115; NO 2; PP. L103-L104; BIBL. 9 REF.Article

INTERFEROMETRE ACOUSTIQUE AVEC UN NOMBRE ARBITRAIRE DE COUCHES DE TRANSITIONBASHLACHEV YU A; TURKIN AV.1982; AKUSTICESKIJ ZURNAL; ISSN 504726; SUN; DA. 1982; VOL. 28; NO 6; PP. 835-836; BIBL. 2 REF.Article

ONDES THERMIQUES STATIONNAIRES DANS UN ECOULEMENT INCIDENT DE GAZ PARFAIT DE CONDUCTIVITE DEPENDANT DE LA TEMPERATUREPAVLOV KB.1975; P.M.T.F.; S.S.S.R.; DA. 1975; NO 1; PP. 133-141; BIBL. 9 REF.Article

ON THE THICKNESS OF THE METAL-SEMICONDUCTOR INTERFACEFLORES F; MARCH NH.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 124; NO 2-3; PP. 329-335; BIBL. 18 REF.Article

TRANSPORT DE CHARGE DANS LES STRUCTURES METAL-COUCHE DE TRANSITION-SEMICONDUCTEUR AVEC ZONE D'ETATS LOCALISES DANS LE VOLUME DE LA COUCHE DE TRANSITIONSTRIKHA VI; SIDENKO TS.1979; POLUPROVODN. MIKROELEKTRON.; UKR; DA. 1979; NO 30; PP. 97-102; BIBL. 4 REF.Article

ENHANCED CRYSTALLINITY OF SILICON FILMS DEPOSITED BY CVD ON LIQUID LAYERS (CVDOLL PROCESS): SILICON ON TIN LAYERS IN THE PRESENCE OF HYDROGEN CHLORIDE.GRAEF MWM; GILING LJ; BLOEM J et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3937-3940; BIBL. 9 REF.Article

THE SOLID PHASE EPITAXIAL GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS.MAJNI G; FERRARI G; FERRARI R et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 44; NO 2; PP. 193-199; BIBL. 16 REF.Article

SIO₂-SI(N-TYPE) INTERFACE INVESTIGATION WITH THE ELECTROCHEMICAL METHOD.GERSHINSKII AE; MIRONOVA LV; CHEREPOV EI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 1; PP. 369-373; ABS. RUSSE; BIBL. 15 REF.Article

GROWTH OF SINGLE CRYSTALS THROUGH INTERFACIAL LAYERS.DISTLER GI; LOBACHEV AN; VLASOV VP et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 21-26; BIBL. 8 REF.Article

TRANSITION LAYERS BETWEEN VO₂ FILMS AND OXIDE SUBSTRATESREMKE RL; WALSER RM; RENE RW et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 61; NO 1; PP. 72-82; BIBL. 16 REF.Article

INFLUENCE DE COUCHES METALLIQUES EN ILOTS SUR LES PROCESSUS DE CRISTALLISATION DES COUCHES COMPACTESOBUKHOV VE; TOCHITSKIJ EH I; ZHEREBILO NK et al.1979; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1979; VOL. 24; NO 5; PP. 1023-1027; H.T. 1; BIBL. 12 REF.Article

LOW ENERGY AND HIGH DOSE PHOSPHORUS ION IMPLANTATION INTO SILICON THROUGH SIO₂ FILM.NATSUAKI N; TAMURA M; TOKUYAMA T et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 10; PP. 2427-2432; BIBL. 13 REF.Article

PLASMA-WALL TRANSITION IN AN OBLIQUE MAGNETIC FIELDCHODURA R.1982; PHYS. FLUIDS; ISSN 0031-9171; USA; DA. 1982; VOL. 25; NO 9; PP. 1628-1633; BIBL. 5 REF.Article