INFLUENCE DU REFROIDISSEMENT SUR LE COURANT D'OBSCURITE D'UN PHOTOMULTIPLICATEUR FEU-83IBRUS YU.1975; PUBL. TARTU. ASTROFIZ. OBS. V. STRUVE, E.S.S.R.; ESTON. S.S.R.; DA. 1975; VOL. 43; PP. 203-207; ABS. ANGL.; BIBL. 5 REF.Article

SIGNAL INDUCED NOISE IN A 56 TUVP PHOTOMULTIPLIER.PETTIFER REW; HEALEY PG.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 8; PP. 617-620; BIBL. 9 REF.Article

DARK CURRENT AND ELECTRON ENERGY SPREAD IN A MAGNETRON)BIGHAM CB.1973; J. MICROWAVE POWER; CANADA; DA. 1973; VOL. 8; NO 2; PP. 195-208; BIBL. 12 REF.Serial Issue

REDUCTION DU COURANT MOYEN D'OBSCURITE D'UN PHOTOMULTIPLICATEUR LORS D'UN FONCTIONNEMENT AVEC DES SIGNAUX PERIODIQUESKULIBABA VI.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 1; PP. 170-172; BIBL. 9 REF.Article

TRANSIENT RESPONSE OF VIDICON PHOTOCONDUCTORS.SOBOLEWSKI VC.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 68-70; BIBL. 8 REF.Article

COMPENSATEUR AUTOMATIQUE DE FOND ET DU COURANT D'OBSCURITE DANS LE COURANT DE SORTIE D'UN PHOTOMULTIPLICATEURZAMETIN VI; PUTILIN AN.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 6; PP. 163-166; BIBL. 8 REF.Article

EXPERIMENTAL STUDY OF BACKGROUND BRIGHTNESS IN IMAGE TUBES.RANGARAJAN LM; KATTI VR; BHIDE GK et al.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 2; PP. 99-102; BIBL. 10 REF.Article

Influence des niveaux profonds et des phénomènes de surface sur les caractéristiques électriques de photodiodes GaInAs = Influence of deep levels and surface phenomena on the electrical properties of GaInAs photodiodesDucroquet, Frédérique; Nouailhat, Alain.1989, 125 p.Thesis

A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

INTRODUCTION A L'ETUDE DU BRUIT DANS LES DISPOSITIFS A COUPLAGE DE CHARGESROLLAND G.1979; CENTRE NATION. ET. SPATIALES, NOTE TECH.; FRA; DA. 1979; NO 90; PP. 1-66; (72 P.); BIBL. 30 REF.Article

CONDUCTION STUDIES IN SILICON NITRIDE: DARK CURRENTS AND PHOTOCURRENTS.DIMARIA DJ; ARNETI PC.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 227-244; BIBL. 48 REF.Article

SEMICONDUCTOR HETEROJUNCTION VIDICONS.WRONSKI CR.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 3; PP. 425-443; BIBL. 17 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

DARK CURRENT NOISE CHARACTERISTICS AND THEIR TEMPERATURE DEPENDENCE IN GERMANIUM AVALANCHE PHOTODIODESKANBE H; GROSSKOPF G; MIKAMI O et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 8; PP. 1534-1539; BIBL. 26 REF.Article

MEASUREMENTS ON BULK-CHANNEL MOS CAPACITORS FOR DORK CURRENT CHARACTERIZATION OF PERISTALTIC CHARGE-COUPLED DEVICES.THEUNISSEN MJJ; SNEL J; WILLEMSE PHM et al.1977; PHILIPS RES. REP.; NETHERL.; DA. 1977; VOL. 32; NO 5-6; PP. 429-435; BIBL. 6 REF.Article

ORIGIN OF THE DARK CURRENTS IN GOLD-A-AS₂SE₃ SANDWICH CELLS.ABKOWITZ M; SCHARFE M.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 5; PP. 305-309; BIBL. 16 REF.Article

EVALUATION OF DARK-CURRENT NON UNIFORMITY IN A CHARGE-COUPLED DEVICE.TANIKAWA K; ITO Y; SEI H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 5; PP. 285-287; BIBL. 6 REF.Article

LIMITATIONS OF THE MAGNETIC DEFOCUSING TECHNIQUE FOR PHOTOMULTIPLIERS.COATES PB.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 7; PP. 614-617; BIBL. 9 REF.Article

REDUCTION OF SILICON VIDICON DARK CURRENT BY HCL OXIDATION.SHIRAKI H.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 12; PP. 1969-1973; BIBL. 5 REF.Article

VERY LOW DARK CURRENT HETEROJUNCTION CCD'SMILANO RA; LIU YZ; ANDERSON RJ et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1294-1301; BIBL. 14 REF.Article

AN APPROXIMATE MODEL OF THE BEAM-BLOCKING CONTACT IN A PBO VIDICON.GOODMAN AM.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 3; PP. 408-424; BIBL. 21 REF.Article

ON THE DARK CURRENTS IN GERMANIUM SCHOTTKY-BARRIER PHOTODETECTORSBUCHANAN DA; CARD HC.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 154-157; BIBL. 11 REF.Article

CHARACTERIZATION OF IN_0.53GA_0.47AS PHOTODIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCELEHENY RF; NAHORY RE; POLLACK MA et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 227-231; BIBL. 17 REF.Article

ETUDE DU COURANT D'OBSCURITE DES LAMES A MICROCANAUXPLETNEVA NI; MEL'NIKOVA MM; SATTAROV DK et al.1978; OPT.-MEKH. PROMYSHL.; SUN; DA. 1978; VOL. 45; NO 11; PP. 72-74; BIBL. 7 REF.Article

The Dark Current and Hot Pixel Percentage of James Webb Space Telescope 5 μm Cutoff HgCdTe Detector Arrays as Functions of TemperatureRAUSCHER, Bernard J; LINDLER, Don J; MOTT, David B et al.Publications of the Astronomical Society of the Pacific. 2011, Vol 123, Num 906, pp 953-957, issn 0004-6280, 5 p.Article