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SOME PROBLEMS OF PHOTOCURRENT MEASUREMENT OF PHOTOVOLTAIC CELLSEPPELDAUER G.1973; APPL. OPT.; U.S.A.; DA. 1973; VOL. 12; NO 2; PP. 408-409; BIBL. 3 REF.Serial Issue

CARACTERISTIQUES DE PHASE DU P.M. FEV-28 EN REGIME D'HETERODYNAGE H.F.GULGAZARYAN KA.1973; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1973; NO 1; PP. 257; RES. DE L'ART. NO 5263 DEPOSE AU VINITISerial Issue

SUR L'ANALYSE DU COURANT PHOTOELECTRIQUE D'UNE JONCTION P-N POLARISEE EN DIRECTMORELIERE R; VIGNES P.1972; C.R. ACAD. SCI., B; FR.; DA. 1972; VOL. 275; NO 25; PP. 951-954; BIBL. 1 REF.Serial Issue

Photocurrent theory based on coordinate dependent lifetimeULLRICH, Bruno; HAOWEN XI.Optics letters. 2010, Vol 35, Num 23, pp 3910-3912, issn 0146-9592, 3 p.Article

POSSIBILITE DE LA DETERMINATION EXPERIMENTALE DE LA FONCTION DE DISTRIBUTION DES ELECTRONS HYDRATES AU COURS DE LA PHOTOEMISSION D'UN METAL DANS LA SOLUTIONROTENBERG ZA; PRISHCHEPA YU A; ANSONE IK et al.1975; ELEKTROKHIMIJA; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 651-654; BIBL. 6 REF.Article

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Photocurrent decay transient process in a Si_1-xGe_x/Si superlatticeHUANG, X. L; JEONG, M. S; CHA, O. H et al.SPIE proceedings series. 1998, pp 313-320, isbn 0-8194-2726-8Conference Paper

OPTICALLY-GATED INP-MISFET: A NEW HIGH-GAIN OPTICAL DETECTORYAMAGUCHI E; KOBAYASHI T.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 104-108; BIBL. 11 REF.Article

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STUDIES ON PHOTO-POLAROGRAPHY. V. THEORY OF PHOTO-CURRENT AND REACTION OF AQUATED ELECTRONS WITH SCAVENGERYAMASHITA K; IMAI H.1972; BULL. CHEM. SOC. JAP.; JAP.; DA. 1972; VOL. 45; NO 2; PP. 628-630; BIBL. 18 REF.Serial Issue

INFLUENCE DE LA TENSION DE POLARISATION SUR L'ANISOTROPIE DE LA PHOTOREPONSE D'HOMODIODES N-P DE ZNGEP₂RUD YU V; MASAGUTOVA RV.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 439-447; BIBL. 4 REF.Article

PHOTOVOLTAIC ACTION SPECTRA AND EFFICIENCIES OF CHLOROPHYLL A SPECIES ABSORBING NEAR 700 NMDODELET JP; LE BRECH J; CHAPADOS C et al.1980; PHOTOCHEM. AND PHOTOBIOL.; GBR; DA. 1980; VOL. 31; NO 2; PP. 143-155; BIBL. 50 REF.Article

COURANTS DE PHOTODIFFUSION DANS LES SOLUTIONS DANS DES CONDITIONS DE DECHARGE A L'ELECTRODE DES ACCEPTEURS DES IONS SOLVATESROTENBERG ZA.1973; ELEKTROKHIMIJA; S.S.S.R.; DA. 1973; VOL. 9; NO 4; PP. 511-513; BIBL. 8 REF.Serial Issue

Transmission coefficient and tunneling relaxation time in MIS tunnel diodesSHIMER, J. A; DAHLKE, W. E.Solid-state electronics. 1983, Vol 26, Num 11, issn 0038-1101, 1129Article

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Photogalvanic in ultrathin film of topological insulatorQUAN SHENG WU; SHENG NAN ZHANG; ZHONG FANG et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 5, pp 895-899, issn 1386-9477, 5 p.Article

Recognition of defect structure of Si(A4) by on-line support vector machineDZIEDZIC, Tomasz; BEDKOWSKI, Janusz; JANKOWSKI, Stanisław et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6937, pp 69371W.1-69371W.5, issn 0277-786X, isbn 978-0-8194-7124-6 0-8194-7124-0, 2Conference Paper

Photoemission of electrons into electrolyte from underformed and plastically deformed indium electrodesDRAGON, R; WACKE, S; GORECKI, T et al.Journal of materials science letters. 1994, Vol 13, Num 23, pp 1670-1672, issn 0261-8028Article

The analysis of thin cylindrical symmetry lateral collection diodesWHITE, A. M.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 35, pp 6517-6521, issn 0022-3719Article

SUR L'INFLUENCE DE LA RUGOSITE DE L'ELECTRODE SUR LA PHOTOEMISSION AU COURS DE LA FORMATION DES PLASMONS DE SURFACEBRODSKIJ AM; URBAKH MI.1981; ELEKTROHIMIJA; ISSN 0424-8570; SUN; DA. 1981; VOL. 17; NO 3; PP. 364-371; BIBL. 9 REF.Article

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