Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode CoresARORA, Rajan; CRESSLER, John D.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 132-139, issn 0018-9383, 8 p.Article

Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTsJIAHUI YUAN; CRESSLER, John D.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1655-1662, issn 0018-9383, 8 p.Article

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage CircuitsSETH, Sachin; NAJAFIZADEH, Laleh; CRESSLER, John D et al.IEEE electron device letters. 2011, Vol 32, Num 1, pp 3-5, issn 0741-3106, 3 p.Article

Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event UpsetAPPASWAMY, Aravind; PHILLIPS, Stan; CRESSLER, John D et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 511-513, issn 0741-3106, 3 p.Article

Theoretical analysis of a low dispersion SiGe LNA for ultra-wideband applicationsPARK, Yunseo; LEE, Chang-Ho; CRESSLER, John D et al.IEEE microwave and wireless components letters. 2006, Vol 16, Num 9, pp 517-519, issn 1531-1309, 3 p.Article

Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power AmplifiersANDREWS, Joel M; GRENS, Curtis M; CRESSLER, John D et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1529-1532, issn 0018-9383, 4 p.Article

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 KLAN LUO; GUOFU NIU; MOEN, Kurt A et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2169-2177, issn 0018-9383, 9 p.Article

On Common-Base Avalanche Instabilities in SiGe HBTsGRENS, Curtis M; CRESSLER, John D; JOSEPH, Alvin J et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 6, pp 1276-1285, issn 0018-9383, 10 p.Article

An Investigation on the Optimization and Scaling of Complementary SiGe HBTsPARTHA SARATHI CHAKRABORTY; MOEN, Kurt A; CRESSLER, John D et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 34-41, issn 0018-9383, 8 p.Article

A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTsSCHMID, Robert L; ULUSOY, Ahmet Cagri; SONG, Peter et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 1, pp 56-58, issn 1531-1309, 3 p.Article

The effects of scaling and bias configuration on operating-voltage constraints in SiGe HBTs for mixed-signal circuitsGRENS, Curtis M; CRESSLER, John D; ANDREWS, Joel M et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 7, pp 1605-1616, issn 0018-9383, 12 p.Article

Noise in SiGe HBTs : Opportunities and challengesCRESSLER, John D.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 101-119, issn 0277-786X, isbn 0-8194-5839-2, 1Vol, 19 p.Conference Paper

An inductorless Ka-band SiGe HBT ring oscillatorKUO, Wei-Min Lance; CRESSLER, John D; CHEN, Yi-Jan Emery et al.IEEE microwave and wireless components letters. 2005, Vol 15, Num 10, pp 682-684, issn 1531-1309, 3 p.Article

A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS TechnologyMADAN, Anuj; MCPARTLIN, Michael J; MASSE, Christophe et al.IEEE microwave and wireless components letters. 2012, Vol 22, Num 4, pp 200-202, issn 1531-1309, 3 p.Article

On the optimization and design of SiGe HBT cascode low-noise amplifiersQINGQING LIANG; GUOFU NIU; CRESSLER, John D et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 329-341, issn 0038-1101, 13 p.Article

On the potential of SiGe HBTs for extreme environment electronicsCRESSLER, John D.Proceedings of the IEEE. 2005, Vol 93, Num 9, pp 1559-1582, issn 0018-9219, 24 p.Article

Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTsMOEN, Kurt A; SARATHI CHAKRABORTY, Partha; RAGHUNATHAN, Uppili S et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 2895-2901, issn 0018-9383, 7 p.Article

SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic TemperaturesJIAHUI YUAN; MOEN, Kurt A; CRESSLER, John D et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 5, pp 1183-1187, issn 0018-9383, 5 p.Article

Sources of phase error and design considerations for silicon-based monolithic high-pass/low-pass microwave phase shiftersMORTON, Matthew A; COMEAU, Jonathan P; CRESSLER, John D et al.IEEE transactions on microwave theory and techniques. 2006, Vol 54, Num 12, pp 4032-4040, issn 0018-9480, 9 p., 1Article

Proton and gamma radiation effects in a new first-generation SiGe HBT technologyHAUGERUD, Becca M; PRATAPGARHWALA, Mustansir M; MITCHELL, Courtney et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 181-190, issn 0038-1101, 10 p.Article

Cryogenic operation of third-generation, 200-GHz Peak-f_T, silicon-germanium heterojunction bipolar transistorsBANERJEE, Bhaskar; VENKATARAMAN, Sunitha; FREEMAN, Greg et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 585-593, issn 0018-9383, 9 p.Article

An Ultra-Thin, High-Power, and Multilayer Organic Antenna Array With T/R Functionality in the X-BandDONADO MORCILLO, Carlos A; PATTERSON, Chad E; LACROIX, Benjamin et al.IEEE transactions on microwave theory and techniques. 2012, Vol 60, Num 12, pp 3856-3867, issn 0018-9480, 12 p., 1Article

A 6―20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing ReceiverSAHA, Prabir K; HOWARD, Duane C; SHANKAR, Subramaniam et al.IEEE journal of solid-state circuits. 2012, Vol 47, Num 9, pp 1998-2006, issn 0018-9200, 9 p.Conference Paper

A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar ModulesCOMEAU, Jonathan P; MORTON, Matthew A; KUO, Wei-Min Lance et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 9, pp 1889-1896, issn 0018-9200, 8 p.Conference Paper

Proton-induced SEU in SiGe digital logic at cryogenic temperaturesSUTTON, Akil. K; MOON, Kurt; CRESSLER, John D et al.Solid-state electronics. 2008, Vol 52, Num 10, pp 1652-1659, issn 0038-1101, 8 p.Conference Paper