EFFET DES CONDITIONS DE VIDE SUR LA STRUCTURE ET LES PROPRIETES ELECTROPHYSIQUES DE COUCHES EPITAXIALES DE SILICIUM SUR LE SAPHIRSTADNIK AV; KOSENKO VE; POLUDIN VI et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 74-80; BIBL. 15 REF.Serial Issue

ELECTRO-OPTIC CONTRAST OBSERVATIONS IN SINGLE-DOMAIN EPITAXIAL FILMS OF BISMUTH TITANATEWU SY; TAKEI WJ; FRANCOMBE MH et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 26-28; BIBL. 5 REF.Serial Issue

ETUDE DES CARACTERISTIQUES COURANT-TENSION DES PELLICULES EPITAXIALES DU N-GAAS SOUMISES A L'ECHAUFFEMENT DES ELECTRONS A L'AIDE D'UN CHAMP UHFKEMARSKIJ VA; LYUBCHENKO VE; SKURATOVSKIJ V YA et al.1973; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1973; VOL. 18; NO 5; PP. 1024-1028; BIBL. 11 REF.Serial Issue

A 70 MHZ STATIC SHIFT REGISTER WITH HIGH INTEGRATION DENSITYKASPERKOVITZ D.1972; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1972; VOL. 11; NO 6; PP. 493-497; H.T. 2; BIBL. 11 REF.Serial Issue

GREEN ELECTROLUMINESCENCE FROM CDS-CUGAS₂ HETERODIODESWAGNER S; SHAY JL; TELL B et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 351-353; BIBL. 6 REF.Serial Issue

PREPARATION D'ALLIAGES PBSNSE DE TRES HAUTE PURETE PAR EPITAXIE EN PHASE LIQUIDE POUR UTILISATION EN DETECTION INFRAROUGEMOULIN M; FAURE M.1972; DGRST-70 7 2572; FR.; DA. 1972; PP. 1-17; H.T. 18; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

THE USE OF SCANNING AUGER MICROSCOPY IN MOLECULAR BEAM EPITAXY OF GAAS AND GAPARTHUR JR.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 136-139; BIBL. 10 REF.Serial Issue

"MODULATION EFFECT BY INTENSE HOLE INJECTION" IN EPITAXIAL SILICON SCHOTTKY BARRIER-DIODESJAGER H; KOSAK W.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 357-364; ABS. ALLEM. FR.; BIBL. 12 REF.Serial Issue

EPITAXIALLY GROWN ND-LASER-FILMSGRABMAIER JG; GRABMAIER BC; KERSTEN RT et al.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 3; PP. 219-220; BIBL. 3 REF.Serial Issue

LIQUID PHASE EPITAXIAL GROWTH OF SILICON IN SELECTED AREASKIM HJ.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 10; PP. 1394-1398; BIBL. 15 REF.Serial Issue

THE EDGE OVERGROWTH IN SELECTIVE DEPOSITION OF GAASMIKAWA T; WADA O; TAKANASHI H et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1756-1757; BIBL. 4 REF.Serial Issue

MESUREUR DU PROFIL DE DOPAGE DES COUCHES EPITAXIQUESBUJKO LD; KALOSHKIN EH P; KOLESHKO VM et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 220-222; BIBL. 5 REF.Serial Issue

VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERSCASEY HC JR; MILLER BI; PINKAS E et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1281-1287; BIBL. 21 REF.Serial Issue

LIFETIMES AND DIODE CHARACTERISTICS IN EPITAXIAL SILICONRAI CHOUDHURY P; SCHRODER DK.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1580-1585; BIBL. 19 REF.Serial Issue

N-P JUNCTION IR DETECTORS MADE BY PROTON BOMBARDMENT OF EPITAXIAL PBTELOGOTHETIS EM; HOLLOWAY H; VARGA AJ et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 9; PP. 411-413; BIBL. 12 REF.Serial Issue

CROISSANCE DES CRISTAUX DE GAP POUR LA PREPARATION DE DIODES A EMISSION ROUGEZYKOV AM; OLEJNIKOV YU G; SAMORUKOV BE et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 6; PP. 1035-1038; BIBL. 9 REF.Serial Issue

GE-DOPED IN_XGA_1-XAS P-N JUNCTIONSKURIHARA M; MORIIZUMI T; TAKAHASHI K et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 763-771; BIBL. 13 REF.Serial Issue

EFFICIENT 1.06-MU M EMISSION FROM IN_XGA_1-XAS ELECTROLUMINESCENT DIODESNUESE CJ; ENSTROM RE.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1067-1069; BIBL. 11 REF.Serial Issue

GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH FREQUENCY OPERATIONDUMKE WP; WOODALL JM; RIDEOUT VL et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1339-1343; H.T. 1; BIBL. 12 REF.Serial Issue

VAPOR-PHASE GROWTH OF SEVERAL III-V COMPOUND SEMICONDUCTORSTIETJEN JJ; ENSTROM RE; BAN VS et al.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 10; PP. 42-49; BIBL. 76 REF.Serial Issue

DOUBLE-DRIFT MILLIMETRE-WAVE IMPATT DIODES PREPARED BY EPITAXIAL GROWTHWATTS BE; HOWARD AM; GIBBONS G et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 8-9; PP. 183-184; BIBL. 4 REF.Serial Issue

EPITAXIAL GROWTH OF SILICON FROM SIH₄ IN THE TEMPERATURE RANGE 800-1150^OCTOWNSEND WG; UDDIN ME.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 39-42; H.T. 1; BIBL. 6 REF.Serial Issue

MINORITAETSTRAEGER-DIFFUSIONSLAENGEN IN GAAS-EPITAXIESCHICHTEN-GEGENUEBERSTELLUNG VERSCHIEDENER MESSVERFAHREN = LONGUEUR DE DIFFUSION DES PORTEURS MINORITAIRES DANS DES COUCHES EPITAXIALES DE GAAS. COMPARAISON DE DIFFERENTES METHODES DE MESURELANGMANN U.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1011-1015; ABS. ANGL. FR.; BIBL. 16 REF.Serial Issue

EPITAXIAL ELECTRO-OPTIC MIXED-CRYSTAL (NH₄)_XK_1-XH₂PO₄ FILM WAVEGUIDERAMASWAMY V.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 5; PP. 183-185; BIBL. 6 REF.Serial Issue

ETUDE DES POSSIBILITES DES TRANSISTORS DE PUISSANCE SILICIUM A COUCHES EPITAXIALES MULTIPLESLAUVRAY H; ROGER B.1972; DGRST-70 72 325; H.T. R.,; DA. 1972; PP. (81 P.); H.T. 1; BIBL. 1 REF.; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.). 2 FASCReport