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THE ASYMPTOTIC MOTION OF THE CONCENTRATED DEFECTTRZESOWSKI A.1978; ARCH. MECH.; POL; DA. 1978; VOL. 30; NO 6; PP. 769-775; ABS. POL/RUS; BIBL. 2 REF.Article

DEFECT FORMATION CHEMISTRY OF EL2 CENTER AT EC=0.83 EV IN ION-IMPLANTED GALLIUM ARSENIDELI GP; WANG KL.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8653-8662; BIBL. 41 REF.Article

IDENTIFICATION OF SMALL DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY.OREL V.1976; SCRIPTA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1976; VOL. 6; NO 4; PP. 43-51; ABS. RUSSE; BIBL. 10 REF.Article

REORGANISATION DES DEFAUTS ET RELAXATIONS DE LONGUE DUREE DES PORTEURS HORS D'EQUILIBRE DANS LES SEMICONDUCTEURS A BANDE ETROITEVOLKOV BA; OSIPOV VV; PANKRATOV OA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 7; PP. 1387-1389; BIBL. 8 REF.Article

A FOUR-DIMENSIONAL FORMULATION OF DEFECT DYNAMICS AND SOME OF ITS CONSEQUENCESEDELEN DGB.1980; INTERNATION. J. ENGNG SCI.; GBR; DA. 1980; VOL. 18; NO 9; PP. 1095-1116; BIBL. 21 REF.Article

ELECTRONIC STRUCTURE OF THE UNRECONSTRUCTED 30O PARTIAL DISLOCATION IN SILICONNORTHRUP JE; COHEN ML; CHELIKOWSKY JR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 8; PP. 4623-4628; BIBL. 18 REF.Article

ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INPLEVINSON M; BENTON JL; KIMERLING LC et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6216-6221; BIBL. 16 REF.Article

RELATIONS BETWEEN VACANCY MIGRATION AND FORMATION ENERGIES, DEBYE TEMPERATURE AND MELTING POINT.BEN ABRAHAM SI; RABINOVITCH A; PELLEG J et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 84; NO 2; PP. 435-441; ABS. ALLEM.; BIBL. 15 REF.Article

INTERACTION PHONON-DEFAUT DANS LES CRISTAUX PYROELECTRIQUESBERCHA DM; SEMAK DG; BALETSKIJ D YU et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 8; PP. 1360-1364; ABS. ANGL.; BIBL. 14 REF.Article

KINETICS OF DIFFUSION-CONTROLLED DEFECT ACCUMULATION RESTRICTED BY THEIR RECOMBINATIONKUZOVKOV V; KOTOMIN E.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 2; PP. 173-176; BIBL. 14 REF.Article

ENERGY DEPENDENCE OF DEFECT ENERGY LEVELS IN ELECTRON IRRADIATED SILICONKRYNICKI J; BOURGOIN JC; NAIJAL G et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 3; PP. 481-484; ABS. FRE; BIBL. 16 REF.Article

THERMODYNAMICS & KINETICS OF LATTICE DEFECTS IN IONIC CRYSTALS.BENIERE F.1976; J. SCI. INDUSTR. RES.; INDIA; DA. 1976; VOL. 35; NO 8; PP. 503-511; BIBL. 42 REF.Article

POSSIBILITE DE FUSION MONOTROPE DANS LES CRISTAUX PRESENTANT UNE DENSITE ELEVEE DE DEFAUTSIVLEV VI.1983; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1983; VOL. 57; NO 2; PP. 455-457; BIBL. 9 REF.Article

DEFAUTS INTRINSEQUES DANS LE SILICIUM ET INTERACTION DE CES DEFAUTS AVEC L'IMPURETE BORE AUX BASSES TEMPERATURESEMTSEV VV; MASHOVETS TV; NAZARYAN E KH et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1901-1904; BIBL. 21 REF.Article

DIFFUSION EN DIFFRACTION DES RAYONS X ET NEUTRONS THERMIQUES PAR DES CRISTAUX QUASI-UNIDIMENSIONNELS NON PARFAITSKRIVOGLAV MA.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 3; PP. 808-820; BIBL. 16 REF.Article

SENSIBILISATION PAR DEFORMATION DES CENTRES DE LUMINESCENCE DANS LES MONOCRISTAUX DE SELENIURE DE ZINCBREDIKHIN SI; GLUSHCHUK OA; SHMURAK SZ et al.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 8; PP. 2249-2254; BIBL. 12 REF.Article

MULTIPHONON PROCESSES IN THE MODEL OF HENRY AND LANGABRAM RA.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 27; PP. L753-L755; BIBL. 3 REF.Article

A COMPUTER-CONTROLLED DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM FOR SEMICONDUCTOR PROCESS CONTROLJACK MD; PACK RC; HENRICKSEN J et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2226-2231; BIBL. 13 REF.Article

ON THE THERMAL GRADIENT MIGRATION OF LENTICULAR VOIDSNICHOLS FA.1979; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1979; VOL. 84; NO 1-2; PP. 319-326; BIBL. 17 REF.Article

ORIGINE DES DEFORMATIONS ET EFFETS DES DEFORMATIONS DANS LES COUCHES HETEROEPITAXIQUES (ARTICLE DE SYNTHESE)TKHORIK YU A.1979; POLUPROVODN. MIKROELEKTRON.; UKR; DA. 1979; NO 30; PP. 3-24; BIBL. 69 REF.Article

NONLOCAL THEORY OF ELASTIC INTERACTION BETWEEN POINT DEFECTS.GAIROLA BKD.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 85; NO 2; PP. 577-585; ABS. ALLEM.; BIBL. 11 REF.Article

INTERACTION OF TWO-LEVEL TUNNELING SYSTEM WITH PHONONS.GOSAR P.1976; PHYSICA A; PAYS-BAS; DA. 1976; VOL. 85; NO 2; PP. 374-388Article

NIVEAUX D'ENERGIE DES PERTURBATIONS DANS UN MODELE DE STRUCTURE PERIODIQUE A PLUSIEURS COUCHESKASAMANYAN ZA.1976; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1976; VOL. 11; NO 2; PP. 89-93; ABS. ARM. ANGL.; BIBL. 2 REF.Article

ANALYSE DE LA MICRODEFECTUOSITE DES PLAQUETTES STANDARDS DE SILICIUM PAR LA METHODE D'ANNIHILATION DES POSITRONSMOKRUSHIN AD; PROKOP'EV EP; KHVOSTOV DV et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 9; PP. 1938-1941; BIBL. 5 REF.Article

EFFET DE LA VARIATION THERMIQUE D'UN RELIEF DE POTENTIEL DE GRANDE DIMENSION DANS LES SEMICONDUCTEURSKARPOV VG.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 2; PP. 217-223; BIBL. 10 REF.Article

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