IDENTIFICATION OF SMALL DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY.OREL V.1976; SCRIPTA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1976; VOL. 6; NO 4; PP. 43-51; ABS. RUSSE; BIBL. 10 REF.Article

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ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INPLEVINSON M; BENTON JL; KIMERLING LC et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6216-6221; BIBL. 16 REF.Article

RELATIONS BETWEEN VACANCY MIGRATION AND FORMATION ENERGIES, DEBYE TEMPERATURE AND MELTING POINT.BEN ABRAHAM SI; RABINOVITCH A; PELLEG J et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 84; NO 2; PP. 435-441; ABS. ALLEM.; BIBL. 15 REF.Article

INTERACTION PHONON-DEFAUT DANS LES CRISTAUX PYROELECTRIQUESBERCHA DM; SEMAK DG; BALETSKIJ D YU et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 8; PP. 1360-1364; ABS. ANGL.; BIBL. 14 REF.Article

KINETICS OF DIFFUSION-CONTROLLED DEFECT ACCUMULATION RESTRICTED BY THEIR RECOMBINATIONKUZOVKOV V; KOTOMIN E.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 2; PP. 173-176; BIBL. 14 REF.Article

ENERGY DEPENDENCE OF DEFECT ENERGY LEVELS IN ELECTRON IRRADIATED SILICONKRYNICKI J; BOURGOIN JC; NAIJAL G et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 3; PP. 481-484; ABS. FRE; BIBL. 16 REF.Article

THERMODYNAMICS & KINETICS OF LATTICE DEFECTS IN IONIC CRYSTALS.BENIERE F.1976; J. SCI. INDUSTR. RES.; INDIA; DA. 1976; VOL. 35; NO 8; PP. 503-511; BIBL. 42 REF.Article

INFLUENCE DU CHAMP ELECTRIQUE SUR L'ACCUMULATION ET LE RECUIT DES DEFAUTS D'IRRADIATION DANS L'ARSENIURE DE GALLIUMMAMONROV AP; PESHEV VV; CHERNOV IP et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 12; PP. 2126-2128; BIBL. 5 REF.Article

PHYSICS OF ULTRA-PURE GERMANIUMHALLER EE; HANSEN WL; GOULDING FS et al.1981; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1981; VOL. 30; NO 1; PP. 93-138; BIBL. 76 REF.Article

THE ROLE OF DEFECTS ON INELASTIC SCATTERING OF MOESSBAUER RADIATION NEAR STRUCTURAL PHASE TRANSITIONSZOLOTOYABKO EV; KASHCHEEV VN.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 2; PP. 723-730; ABS. RUS; BIBL. 18 REF.Article

CONDUCTIVITE THERMIQUE DE PHONONS NON LOCALELEVINSON IB.1980; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1980; VOL. 79; NO 4; PP. 1394-1407; ABS. ENG; BIBL. 6 REF.Article

ETUDE D'UN NIVEAU DE DISLOCATION PROFOND DANS ZNSE PAR LA METHODE DE CONDUCTIVITE PHOTOSTIMULEEKIRICHENKO LG; PETRENKO VF.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 6; PP. 1590-1594Article

VIBRATIONAL PROPERTIES OF THE <001> SPLIT INTERSTITIAL IN SILICONWRUCK D.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 1; PP. 177-186; ABS. GER; BIBL. 23 REF.Article

LES DEFAUTS PAR IRRADIATION, ALTERATIONS LOCALES DE L'ETAT ELECTRONIQUE DU CRISTAL METALLIQUESHALAEV AM.1978; METALLOFIZIKA; UKR; DA. 1978; NO 74; PP. 3-11; BIBL. 24 REF.Article

EVALUATION OF THE ASSOCIATION PARAMETERS OF QUADRIPOLES (DIMERS OF DIPOLES) IN IONIC CRYSTALS FROM CONDUCTIVITY INVESTIGATIONS. I. GENERAL.BOLLMANN W.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 40; NO 1; PP. 49-53; ABS. ALLEM.; BIBL. 3 REF.Article

INTERACTION DE DIFFUSION ELASTIQUE DES CAVITES RAPPROCHEESBARANOV AV; VLASOV NM; KOLESOV VS et al.1977; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1977; VOL. 43; NO 6; PP. 1133-1137; BIBL. 6 REF.Article

DIFFUSION COEFFICIENT FOR THE EQUIV. A 1.35 EV EMISSION CENTER IN ANNEALED GAASNOJIMA S.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7602-7605; BIBL. 10 REF.Article

RATES OF DEFECT PRODUCTION BY FISSION NEUTRONS IN METALS AT 4.7 KCOLTMAN RR JR; KLABUNDE CE; WILLIAMS JM et al.1981; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1981; VOL. 99; NO 2-3; PP. 284-293; BIBL. 24 REF.Article

THE EFFECTIVE-MASS NATURE OF DEEP-LEVEL POINT-DEFECT STATES IN SEMICONDUCTORSPANTELIDES ST; LIPARI NO; BERNHOLC J et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 10; PP. 1045-1049; BIBL. 17 REF.Article

COUPLING OF DEFECT-CLUSTERS IN A LINEAR CHAIN-IDENTICAL DEFECTSSRIVASTAVA KP; OJHA SP.1979; PHYSICA B+C; NLD; DA. 1979; VOL. 96; NO 1; PP. 116-121; BIBL. 5 REF.Article

ELECTRONIC STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICONLIPARI NO; BERNHOLC J; PANTELIDES ST et al.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 18; PP. 1354-1357; BIBL. 11 REF.Article

ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUMMOONEY PM; CHERKI M; BOURGOIN JC et al.1979; J. PHYS., LETTRES; FRA; DA. 1979; VOL. 40; NO 2; PP. L19-L22; ABS. FRE; BIBL. 13 REF.Article

A NEW METHOD FOR DEMONSTRATING THE BOURGOIN MECHANISM IN SEMICONDUCTORS.AMITABH JAIN; SMITH BJ.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 40; NO 1; PP. K31-K33; BIBL. 6 REF.Article

THE SENSITIVITY OF SILVER HALIDE GRAINS AND ITS RESPONSE TO CHARGED PARTICLES.SINGH M; SHARMA AP.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 12; PP. 1167-1174; BIBL. 29 REF.Article