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REDUCTION DE LA CONCENTRATION DES DEFAUTS PONCTUELS INTRINSEQUES DANS LES CRISTAUXSABUROVA TN; INOZEMTSEV KI; TOMSON AS et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 9; PP. 1672-1674Article

DETERMINATION OF BREAKDOWN RATES AND DEFECT DENSITIES IN SIO2SHATZKES M; AV RON M.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 3; PP. 217-230; BIBL. 26 REF.Article

THEORIE DES CASCADES D'IRRADIATION DANS LES CRISTAUX (SYMETRIE CYLINDRIQUE)TRUSHIN YU V.1977; TRUDY INST. FIZ. METALLOV, SVERDLOVSK; S.S.S.R.; DA. 1977; VOL. 34; PP. 66-80; BIBL. 21 REF.Article

INFLUENCE DE LA DEFORMATION PLASTIQUE SUR LA STRUCTURE DES SPECTRES DE PHOTOLUMINESCENCE DES MONOCRISTAUX DE CARBURE DE SILICIUMGORBAN IS; KRAVETS VA; MISHINOVA GN et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2107-2110; BIBL. 8 REF.Article

THE RATE EQUATIONS USED IN IRRADIATION STUDIESGUROL H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 15-18; BIBL. 20 REF.Article

ORIENTATION DEPENDENCE OF OXIDATION STACKING FAULT DENSITY IN SILICONPEKAREV AI; KRASNOVA GF; NEMTSEV GZ et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 327-330; ABS. RUS; BIBL. 7 REF.Article

POSITRON LIFETIME STUDIES ON THORIUM OXIDE POWDERSUPADHYAYA DD; MURALEEDHARAN RV; SHARMA BD et al.1982; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 3; PP. 509-518; BIBL. 23 REF.Article

THE OBSERVATION OF HIGH CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON IRRADIATED N-TYPE GAAS BY X-BAND EPRGOSWAMI NK; NEWMAN RC; WHITEHOUSE JE et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 5; PP. 473-477; BIBL. 14 REF.Article

ELECTRON MICROSCOPE STUDY OF MICROTWINS IN EPITAXIAL SILICON FILMS ON SAPPHIRELIHL R; OPPOLZER H; PONGRATZ P et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 1; PP. 89-95; BIBL. 7 REF.Article

EXACT SOLUTIONS OF MODELS FOR CONTINUOUS AND PULSED IRRADIATION AND IMPLICATIONS FOR STABILITY AND FLUCTUATIONSKRISHAN K.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 45; NO 3-4; PP. 169-184; BIBL. 18 REF.Article

A THERMODYNAMIC ANALYSIS OF PHASE TRANSITIONS OF CRYSTALS WITH STRUCTURAL DISORDERSCHMALZRIED H.1980; BER. BUNSENGES. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1980; VOL. 84; NO 2; PP. 120-124; ABS. GER; BIBL. 18 REF.Article

ON THE VALIDITY OF ENERGY PARTITIONING IN THE THEORY OF RADIATION DOMAGE CASCADES.WILLIAMS MMR.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 6; PP. 801-821; BIBL. 11 REF.Article

DEFECT STRUCTURE IN COO.FRYT E.1976; OXIDAT. OF METALS; U.S.A.; DA. 1976; VOL. 10; NO 5; PP. 311-327; BIBL. 30 REF.Article

FLUCTUATIONS IN DEFECT CONCENTRATION DUE TO INHOMOGENEOUS PRODUCTION OF POINT-DEFECTS BY COLLISION CASCADESMARWICK AD.1983; JOURNAL OF NUCLEAR MATERIALS; ISSN 0022-3115; NLD; DA. 1983; VOL. 116; NO 1; PP. 40-43; BIBL. 2 REF.Article

POSSIBILITE DE FUSION MONOTROPE DANS LES CRISTAUX PRESENTANT UNE DENSITE ELEVEE DE DEFAUTSIVLEV VI.1983; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1983; VOL. 57; NO 2; PP. 455-457; BIBL. 9 REF.Article

VAPOR PRESSURE DEPENDENCE OF NATIVE DEFECT CONCENTRATIONS IN GAPTANAKA A; SUKAGAWA T.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 9208-9209; BIBL. 9 REF.Article

DIFFUSION EN DIFFRACTION DES RAYONS X ET NEUTRONS THERMIQUES PAR DES CRISTAUX QUASI-UNIDIMENSIONNELS NON PARFAITSKRIVOGLAV MA.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 3; PP. 808-820; BIBL. 16 REF.Article

ON SPECIFIC FEATURES OF THE DEFECT FORMATION MECHANISM IN CADMIUM CHALCOGENIDES UNDER THERMAL NEUTRON IRRADIATIONERMOLOVICH IB; GORBUNOV VV.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. K13-K18; BIBL. 14 REF.Article

CZOCHRALSKI SILICON CRYSTAL GROWTH AND CHARACTERIZATIONDAIDO K; SHINOYAMA S; INOUE N et al.1979; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1979; VOL. 27; NO 1-2; PP. 33-40; BIBL. 9 REF.Article

SYSTEM FOR CONTINUOUS MONITORING OF POINT DEFECT CONCENTRATIONS DURING IRRADIATIONS AND ANNEALSJACKSON JJ; RYAN EA.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 10; PP. 1193-1200; BIBL. 26 REF.Article

CARACTERISTIQUES DE RESISTIVITE ELECTRIQUE EN FONCTION DU CHAMP POUR DES COUCHES SEMICONDUCTRICES CONTENANT DES BARRIERES INTERGRANULAIRESGOL'DMAN EI; GULYAEV IB; ZHDAN AG et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2089-2093; BIBL. 11 REF.Article

ANALYSE DE LA MICRODEFECTUOSITE DES PLAQUETTES STANDARDS DE SILICIUM PAR LA METHODE D'ANNIHILATION DES POSITRONSMOKRUSHIN AD; PROKOP'EV EP; KHVOSTOV DV et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 9; PP. 1938-1941; BIBL. 5 REF.Article

REACTIVITY AND POINT DEFECTS OF DOUBLE OXIDES WITH EMPHASIS ON SIMPLE SILICATES.SCHMALZRIED H.1978; PHYS. CHEM. MINER.; GERM.; DA. 1978; VOL. 2; NO 3; PP. 279-294; BIBL. 24 REF.Article

CARACTERISATION PAR DIFFRACTION DE RAYONS X DU SILICIUM EPITRAXIE SUR CORINDONGONCHOND JEAN PIERRE.1978; ; FRA; DA. 1978; 143 F.: ILL.; 30 CM; BIBL. 70 REF.; TH. DOCT.-ING./GRENOBLE 1/1978Thesis

ELECTRON DIFFRACTION IN CRYSTALLINE SPECIMENS CONTAINING A HIGH DENSITY OF LATTICE DEFECTS. I. DEVELOPMENT OF A STATISTICAL THEORY.WILKENS M; RAPPS P.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. 173-182; ABS. ALLEM.; BIBL. 17 REF.Article

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