kw.\*:("CRYSTAL DEFECT DENSITY")
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REDUCTION DE LA CONCENTRATION DES DEFAUTS PONCTUELS INTRINSEQUES DANS LES CRISTAUXSABUROVA TN; INOZEMTSEV KI; TOMSON AS et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 9; PP. 1672-1674Article
INFLUENCE DE LA DEFORMATION PLASTIQUE SUR LA STRUCTURE DES SPECTRES DE PHOTOLUMINESCENCE DES MONOCRISTAUX DE CARBURE DE SILICIUMGORBAN IS; KRAVETS VA; MISHINOVA GN et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2107-2110; BIBL. 8 REF.Article
THE RATE EQUATIONS USED IN IRRADIATION STUDIESGUROL H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 15-18; BIBL. 20 REF.Article
ORIENTATION DEPENDENCE OF OXIDATION STACKING FAULT DENSITY IN SILICONPEKAREV AI; KRASNOVA GF; NEMTSEV GZ et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 327-330; ABS. RUS; BIBL. 7 REF.Article
POSITRON LIFETIME STUDIES ON THORIUM OXIDE POWDERSUPADHYAYA DD; MURALEEDHARAN RV; SHARMA BD et al.1982; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 3; PP. 509-518; BIBL. 23 REF.Article
THE OBSERVATION OF HIGH CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON IRRADIATED N-TYPE GAAS BY X-BAND EPRGOSWAMI NK; NEWMAN RC; WHITEHOUSE JE et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 5; PP. 473-477; BIBL. 14 REF.Article
ELECTRON MICROSCOPE STUDY OF MICROTWINS IN EPITAXIAL SILICON FILMS ON SAPPHIRELIHL R; OPPOLZER H; PONGRATZ P et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 1; PP. 89-95; BIBL. 7 REF.Article
EXACT SOLUTIONS OF MODELS FOR CONTINUOUS AND PULSED IRRADIATION AND IMPLICATIONS FOR STABILITY AND FLUCTUATIONSKRISHAN K.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 45; NO 3-4; PP. 169-184; BIBL. 18 REF.Article
A THERMODYNAMIC ANALYSIS OF PHASE TRANSITIONS OF CRYSTALS WITH STRUCTURAL DISORDERSCHMALZRIED H.1980; BER. BUNSENGES. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1980; VOL. 84; NO 2; PP. 120-124; ABS. GER; BIBL. 18 REF.Article
ON THE VALIDITY OF ENERGY PARTITIONING IN THE THEORY OF RADIATION DOMAGE CASCADES.WILLIAMS MMR.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 6; PP. 801-821; BIBL. 11 REF.Article
DEFECT STRUCTURE IN COO.FRYT E.1976; OXIDAT. OF METALS; U.S.A.; DA. 1976; VOL. 10; NO 5; PP. 311-327; BIBL. 30 REF.Article
EFFECTIVE DEFECT CONCENTRATION IN POTASSIUM = CONCENTRATION EFFECTIVE DES DEFAUTS DANS LE POTASSIUMPOKORNY M.1982; J. PHYS. F; ISSN 0305-4608; GBR; DA. 1982; VOL. 12; NO 1; PP. 39-45; BIBL. 12 REF.Article
THE RESPONSE OF FISSION GAS BUBBLES TO THE DYNAMIC BEHAVIOR OF POINT DEFECTSGRIESMEYER JM; GHONIEM NM.1979; J. MATER. NUCL.; NLD; DA. 1979; VOL. 80; NO 1; PP. 88-101; BIBL. 22 REF.Article
EFFECTIVE DEFECT PRODUCTION RATE FOR PULSED IRRADIATIONNAUNDORF V; ABROMEIT C.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 69; NO 3-4; PP. 261-265; BIBL. 7 REF.Article
NONSTOICHIOMETRY OF INORGANIC SOLIDSALBERS W.1982; CURRENT TOPICS IN MATERIALS SCIENCE; ISSN 0165-1854; NLD; DA. 1982; VOL. 10; PP. 191-247; BIBL. 50 REF.Article
THE INFLUENCE OF STRUCTURAL DEFECTS AND CONCENTRATION INHOMOGENEITIES IN EPITAXIAL GALLIUM ARSENIDE ON THE ELECTRICAL CHARACTERISTICS OF IMPACT IONIZATION AVALANCHE TRANSIT TIME DIODESKONAKOVA RV; SHVARTS YU M.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 3; PP. 203-206; BIBL. 12 REF.Article
QUANTITATIVE DETERMINATION OF MICRODEFECT DENSITY IN DISLOCATION-FREE SILICON BY PREFERENTIAL CHEMICAL ETCHINGSERIES RW; BARRACLOUGH KG; BARDSLEY W et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 363-367; BIBL. 10 REF.Article
THE VACANCY DISLOCATION LOOP MICROSTRUCTURE FORMED DURING HEAVY-PARTICLE BOMBARDMENTBRAILSFORD AD.1979; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1979; VOL. 84; NO 1-2; PP. 245-268; BIBL. 19 REF.Article
CALCUL DE LA QUANTITE DE DEFAUTS PONCTUELS EN EQUILIBRE A LA LIMITE DE DEUX CRISTAUX ET EFFET DE CES DEFAUTS SUR L'ENERGIE D'ADHESIONVOROB'EV MA; AMBROK AG; PELLER VV et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 4; PP. 1100-1104; BIBL. 6 REF.Article
A STOCHASTIC THEORY OF PARTICLE TRANSPORT. IIPAZSIT I; WILLIAMS MMR.1980; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1980; VOL. 13; NO 3; PP. 351-360; BIBL. 12 REF.Article
A GENERALIZED APPROACH TO THE DEFECT CHEMISTRY OF TERNARY COMPOUNDSGROENINK JA; JANSE PH.1978; Z. PHYS. CHEM., NEUE FOLGE, WIESBADEN; DEU; DA. 1978; VOL. 110; NO 1; PP. 17-28; ABS. GER; BIBL. 16 REF.Article
Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle
Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article
The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article
DEFECT CONTROL DURING SILICON EXPITAXIAL GROWTH USING DICHLOROSILANEJAYANT BALIGA B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1078-1084; BIBL. 19 REF.Article