A SELF-CONSISTENT MODEL FOR THE OPTICAL EXCITATIONS OF THE U₂ AND U₁ CENTERS IN ALKALI-HALIDESKOILLER B; BRANDI HS.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 2; PP. K179-K183; BIBL. 6 REF.Article

DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON IRRADIATED P-TYPE SILICONMUKASHEV BN; FROLOV VV; KOLODIN LG et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 7; PP. 358-360; BIBL. 9 REF.Article

QUELQUES PROPRIETES DES NIVEAUX PIEGES FORMES PAR UN TRAITEMENT THERMIQUE DE SI NASTROVA EV; VORONKOV VB; LEBEDEV AA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2074-2075; BIBL. 4 REF.Article

OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAASMARTIN GM.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 747-748; BIBL. 13 REF.Article

DETERMINATION DES NIVEAUX PROFONDS DANS LE SILICIUM DUS A L'IMPLANTATION D'IONS ARGON, PAR LA METHODE DES CARACTERISTIQUES V-FDABBASOVA RU; BOBROVA EA; GALKIN GN et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 448-452; BIBL. 9 REF.Article

ETUDE DE L'HEMATITE COMPRIMEE PAR CHOC A L'AIDE D'UNE TECHNIQUE DE POSITONSALEKSEEVA OK; MAKAROV EF; MESSINEV M YU et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3099-3103; BIBL. 9 REF.Article

MORE ON THE EMISSION BAND OF THE F-CENTER IN ALKALI HALIDESBOSI L; NIMIS M.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 2; PP. K151-K154; BIBL. 16 REF.Article

SELF-CONSISTENT CLUSTER THEORY FOR SYSTEMS WITH OFF-DIAGONAL DISORDERKAPLAN T; LEATH PL; GRAY LJ et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4230-4246; BIBL. 23 REF.Article

EFFECTS OF ION IMPLANTATION ON DEEP LEVELS IN GAASJERVIS TR; WOODARD DW; EASTMAN LF et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 619-621; BIBL. 6 REF.Article

F_X CENTRES IN CESIUM HALIDESCHITRA SANKAR; SIVASANKAR VS; WHIPPEY PW et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 383-390; ABS. GER; BIBL. 18 REF.Article

SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY AND LIFETIME IN CDTE AT THE PRESENCE OF SURFACE TRAPPING PROCESSES.TALAT GH; TOMASEK M.1978; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1978; VOL. 28; NO 3; PP. 331-337; H.T. 1; BIBL. 20 REF.Article

PARAMAGNETIC DEFECTS IN THE SURFACE REGION OF PROCESSED SILICON.CAPLAN PJ.1976; A.C.S. SYMP. SER.; U.S.A.; DA. 1976; VOL. 34; PP. 173-181; BIBL. 21 REF.; (MAGN. RESONANCE COLLOID INTERFACE SCI. SYMP. PART OF MEET. AM. CHEM. SOC. 172,. SAN FRANCISCO; 1976)Conference Paper

DEEP LEVELS DUE TO ISOLATED SINGLE AND PAIR VACANCIES IN C, SI AND GETALWAR DN; TING SC.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 32; PP. 6573-6584; BIBL. 62 REF.Article

THEORIE DES NIVEAUX PROFONDS DE LACUNES DANS IN_1-YGA_YAS_1-XP_XBUISSON JP; ALLEN RE; DOW JD et al.1982; J. PHYS.; ISSN 0302-0738; FRA; DA. 1982; VOL. 43; NO 1; PP. 181-183; ABS. ENG; BIBL. 20 REF.Article

DEEP LEVELS IN SEMICONDUCTORSJAROS M.1980; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1980; VOL. 29; NO 3; PP. 409-525; BIBL. 6 P.Article

THE FORMATION OF A HIGH-RESISTIVITY LAYER CLOSE TO THE SURFACE IN SI IRRADIATED WITH ELECTRONS AT HIGHER TEMPERATURESGERASIMENKO NN; KIBALINA NP; STAS VF et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K65-K68; BIBL. 7 REF.Article

THERMALLY-STIMULATED CURRENT OF ZINC SELENIDE HEAT-TREATED IN CONTROLLED PARTIAL PRESSURES OF CONSTITUENT ELEMENTSSATOH S; IGAKI K.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 3; PP. 485-489; BIBL. 20 REF.Article

ETATS DE LACUNES DE TE DANS LE SEMICONDUCTEUR PB_1-XSN_XTE A BANDE ETROITESIZOV FF; ORLETSKIJ VB; RADCHENKO MV et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2117-2122; BIBL. 16 REF.Article

ETUDE DES DEFAUTS D'IRRADIATION DANS L'ARSENIURE DE GALLIUM SOUS COMPRESSION HYDROSTATIQUEBRUDNYJ VN; VILISOV AA; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 13-16; BIBL. 11 REF.Article

STRUCTURE FINE DES NIVEAUX DE L'EXCITON LIE ET DES COMPLEXES A PLUSIEURS EXCITONS DANS LE GERMANIUMPIKUS GE; AVERKIEV NS.1980; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 32; NO 5; PP. 352-356; BIBL. 6 REF.Article

ITERATIVE EHT CALCULATIONS FOR THE POSITIVE DIVACANCY IN SILICONWEIGEL C; AMMERLAAN CAJ.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 2; PP. 505-516; ABS. GER; BIBL. 30 REF.Article

CARACTERISTIQUES ENERGETIQUES DES ELECTRONS SUR LES LACUNES DU CARBURE DE VANADIUM CUBIQUETSKHAJ VA; GEL'D PV.1978; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1978; VOL. 52; NO 2; PP. 281-285; BIBL. 9 REF.Article

SCATTERED WAVE FUNCTIONS OF DISLOCATED LATTICES.DE HOSSON JTM; VAN DE BRAAK HP; CASPERS WJ et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 63; NO 2; PP. 174-176; BIBL. 10 REF.Article

VIBRATIONAL AND ELECTRONIC STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY THE EXTENDED HUECKEL THEORY.SINGH VA; WEIGEL C; CORBETT JW et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 2; PP. 637-646; ABS. ALLEM.; BIBL. 24 REF.Article

ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INPLEVINSON M; BENTON JL; KIMERLING LC et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6216-6221; BIBL. 16 REF.Article