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kw.\*:("CRYSTAL PERFECTION")

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PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

GROWTH OF CDTE FILMS ON SAPPHIRE BY MOLECULAR BEAM EPITAXYMYERS TH; YAWCHENG LO; BICKNELL RN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 247-248; BIBL. 8 REF.Article

NEUTRON DIFFRACTION TOPOGRAPHY OF FE (SI) SINGLE CRYSTALSCHALUPA B; VRANA M.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. K13-K15; H.T. 1; BIBL. 5 REF.Article

CHANNELING STUDIES OF EPITAXIAL URANIUM DIOXIDE FILMSNASU S; SHIOZAWA K; KURASAWA T et al.1979; J. MATER. NUCL.; NLD; DA. 1979; VOL. 80; NO 2; PP. 386-389; BIBL. 3 REF.Article

SELECTION DE BLOCS MONOCRISTALLINS DANS UN CRISTAL DE BERYLLIUM PAR TOPOGRAPHIE NEUTRONIQUEHUSTACHE R.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 163; NO 1; PP. 151-156; ABS. ENG; BIBL. 10 REF.Article

DISLOCATION-FREE CZOCHRALSKI GROWTH OF (110) SILICON CRYSTALSDYER LD.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 4; PP. 533-540; BIBL. 20 REF.Article

HYDROTHERMAL SYNTHESIS OF CRYSTALSDEMIANETS LN; LOBACHEV AN.1979; KRISTALL. U. TECH.; DDR; DA. 1979; VOL. 14; NO 5; PP. 509-525; BIBL. 2 P.Article

MAGNETORESISTANCE OF HIGHLY ORIENTED GRAPHITE AT 77 K AND 42 KKABURAGI Y.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 26; PP. 5425-5440; BIBL. 2 P.Article

ON THE POLARIZATION FACTOR FOR CRYSTAL-MONOCHROMATED X-RADIATION. I: ASSESSMENT OF ERRORSVINCENT MG; FLACK HD.1980; ACTA CRYSTALLOGR., SECT. A, CRYST. PHYS., DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1980; VOL. 36; NO 4; PP. 610-614; BIBL. 12 REF.Article

Size and perfection of crystals in lake iceBARNS, R. L; LAUDISE, R. A.Journal of crystal growth. 1985, Vol 71, Num 1, pp 104-110, issn 0022-0248Article

ADVANCES IN SILICON TECHNOLOGY FOR THE SEMICONDUCTOR INDUSTRYSWAROOP RB.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 6; PP. 111-114; BIBL. 11 REF.Article

TRANSFORMATIONS POLYMORPHES DE NITRURES DE BORE TYPE GRAPHITE DIFFERANT DANS LE DEGRE DE PERFECTION CRISTALLINE, SOUS HAUTES PRESSIONSKURDYUMOV AV; GLADKAYA IS; GOLUBEV AS et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 11; PP. 1835-1838; BIBL. 5 REF.Article

HIGH-PURITY, SINGLE-CRYSTAL INP GROWN BY SYNTHESIS SOLUTE DIFFUSIONENGH RO; PETERSON SR; THORNE JP et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 243-245; BIBL. 7 REF.Article

ANALYSE DE LA MICRODEFECTUOSITE DES PLAQUETTES STANDARDS DE SILICIUM PAR LA METHODE D'ANNIHILATION DES POSITRONSMOKRUSHIN AD; PROKOP'EV EP; KHVOSTOV DV et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 9; PP. 1938-1941; BIBL. 5 REF.Article

X-RAY TOPOGRAPHY OF LARGE SINGLE CRYSTALSDINEEN C; JONES FJ; ISHERWOOD BJ et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 3; PP. 383-388; BIBL. 2 REF.Article

LASER ANNEALING OF SILICON ON SAPPHIREROULET ME; SCHWOB P; AFFOLTER K et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5536-5538; BIBL. 9 REF.Article

SILICON-ON-SAPPHIRE CRYSTALLINE PERFECTION AND MOS TRANSISTOR MOBILITY.WEITZEL CE; SMITH RT.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 5; PP. 792-798; BIBL. 41 REF.Article

STUDY OF CRYSTAL PERFECTION OF CVD-GROWN ALPHA -AL2O3 SINGLE CRYSTALS BY TRANSMISSION OF X-RAY DIFFRACTION TOPOGRAPHYLAL K; KUMAR V.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 2079-2084; BIBL. 10 REF.Article

THE GROWTH OF SINGLE CRYSTALS OF SOME ORGANIC COMPOUNDS BY THE CZOCHRALSKI TECHNIQUE AND THE ASSESSMENT OF THEIR PERFECTION.BLEAY J; HOOPER RM; NARANG RS et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 5; PP. 589-596; BIBL. 19 REF.Article

CRYSTAL ASSESSMENT BY X-RAY TOPOGRAPHY USING SYNCHROTRON RADIATION.TANNER BK.1977; PROGR. CRYST. GROWTH CHARACTER.; G.B.; DA. 1977; VOL. 1; NO 1; PP. 23-56; BIBL. 2 P. 1/2Article

GROWTH OF DISLOCATION-FREE GALLIUM-PHOSPHIDE CRYSTALS FROM A STOICHIOMETRIC MELT.ROKSNOER PJ; HUIJBREGTS JMPL; VAN DE WIJGERT WM et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 40; NO 1; PP. 6-12; BIBL. 23 REF.Article

CROISSANCE DE MONOCRISTAUX CR2O3 PAR UNE METHODE DE FONDANT AVEC V2O5USHIO M.1977; NIPPON KAGAKU KAISHI; JAP.; DA. 1977; NO 12; PP. 1828-1832; ABS. ANGL.; BIBL. 11 REF.Article

DREILAENDER-JAHRESTAGUNG UEBER KRISTALLWACKSTUM UND KRISTALLZUECHTUNG. KERNFORSCHUNGSANLAGE; JUELICH; 1975. = CONGRES ANNUEL TRINATIONAL ALLEMAGNE, PAYS-BAS, SUISSE) SUR LA CROISSANCE CRISTALLINE ET LA FABRICATION DES CRISTAUX. CENTRE DE RECHERCHES; JUELICH; 19751976; BER. KERNFORSCH.-ANLAGE JUELICH-JUEL.-CONF.; DTSCH.; DA. 1976; NO 18; PP. (225P.); H.T. 78; BIBL. DISSEM.Conference Paper

CROISSANCE DE CRISTAUX D'ANTIMOINE SOUS FORME DE FILAMENTSGAJDUKOV YU P; GOLYAMINA EM; DANILOVA NP et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 2; PP. 217-218; BIBL. 3 REF.Article

ETUDE DES CRISTAUX DE MGO EN FILAMENTS OBTENUS PAR DIVERSES METHODESMETUSHEVSKIJ AS; VLASOV AS; TIMASHEV VV et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 7; PP. 1215-1218; BIBL. 2 REF.Article

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