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au.\*:("CULLIS AG")

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THE VARIATION IN THE LUMINESCENT AND STRUCTURAL PROPERTIES OF SPUTTER-DEPOSITED ZNS:MN THIN FILMS WITH POST-DEPOSITION ANNEALINGCATTELL AF; CULLIS AG.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 92; NO 3; PP. 211-217; BIBL. 10 REF.Article

ELECTRON MICROSCOPE STUDY OF EPITAXIAL SILICON FILMS ON SAPPHIRE AND DIAMOND SUBSTRATES.CULLIS AG; BOOKER GR.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 53-67; BIBL. 1 P.Article

DIFFUSION GETTERING OF AU AND CU IN SILICON.MEEK RL; SEIDEL TE; CULLIS AG et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 786-796; BIBL. 26 REF.Article

DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI.SEIDEL TE; MEEK RL; CULLIS AG et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 600-609; BIBL. 16 REF.Article

COMPARATIVE STUDY OF ANNEALED NEON-, ARGON-, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICONCULLIS AG; SEIDEL TE; MEEK RL et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 10; PP. 5188-5198; BIBL. 30 REF.Article

ULTRARAPID CRYSTAL GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS SILICON ANNEALED WITH SHORT Q-SWITCHED LASER PULSESCULLIS AG; WEBBER HC; CHEW NG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 11; PP. 998-1000; BIBL. 20 REF.Article

CORRELATION OF THE STRUCTURE AND ELECTRICAL PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICONCULLIS AG; WEBBER HC; CHEW NG et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 547-550; BIBL. 20 REF.Article

ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIALCULLIS AG; AUGUSTUS PD; STIRLAND DJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2556-2560; BIBL. 22 REF.Article

THE NATURE OF DEFOCUS FRINGES IN SCANNING-TRANSMISSION ELECTRON MICROSCOPE IMAGES.JOY DC; MAHER DM; CULLIS AG et al.1977; J. MICR.; G.B.; DA. 1977; VOL. 108; NO 2; PP. 185-193; BIBL. 14 REF.Article

THE PHYSICAL STATE OF IMPLANTED TUNGSTEN IN COPPER.CULLIS AG; POATE JM; BORDERS JA et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 314-316; BIBL. 5 REF.Article

SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERSCULLIS AG; WEBBER HC; POATE JM et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 320-322; BIBL. 17 REF.Article

MOESSBAUER EFFECT OF THE 13.3-KEV TRANSITION IN 73GE.PFEIFFER L; RAGHAVAN RS; LICHTENWALNER CP et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 11; PP. 4793-4804; BIBL. 14 REF.Article

ION IMPLANTATION AS AN ULTRAFAST QUENCHING TECHNIQUE FOR METASTABLE ALLOY PRODUCTION: THE AG-CU SYSTEM.POATE JM; BORDERS JA; CULLIS AG et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 8; PP. 365-368; BIBL. 16 REF.Article

MICROSCOPY OF SEMICONDUCTING MATERIALS, 1981. PROCEEDINGS OF THE ROYAL MICROSCOPICAL SOCIETY CONFERENCE HELD IN ST CATHERINE'S COLLEGE, OXFORD, 6-10 APRIL 1981CULLIS AG ED; JOY DC ED.1981; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1981; NO 60; 464 P.; BIBL. DISSEM.Conference Paper

ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SIBAERI P; FOTI G; POATE JM et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 800-802; BIBL. 14 REF.Article

TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTSCULLIS AG; WEBBER HC; POATE JM et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 1; PP. 41-49; BIBL. 13 REF.Article

INTERFACE AND SURFACE STRUCTURE OF EPITAXIAL NISI2 FILMSCHIU KCR; POATE JM; ROWE JE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 988-990; BIBL. 8 REF.Article

GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELTCULLIS AG; HURLE DTJ; WEBBER HC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 642-644; BIBL. 20 REF.Article

DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACEBAERI P; POATE JM; CAMPISANO SU et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 912-914; BIBL. 11 REF.Article

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