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Results 1 to 25 of 16017

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Catalytically enhanced H2-free CVD of transition metals using commercially available precursorsBAHLAWANE, N; PREMKUMAR, P. Antony; ONWUKA, K et al.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 8914-8918, issn 0257-8972, 5 p.Conference Paper

CVD of copper using copper(I) and copper(II) β-diketonatesNAIK, M. B; GILL, W. N; WENTORF, R. H et al.Thin solid films. 1995, Vol 262, Num 1-2, pp 60-66, issn 0040-6090Article

Comparative study of surface integrity aspects of Incoloy 825 during machining with uncoated and CVD multilayer coated insertsTHAKUR, A; MOHANTY, A; GANGOPADHYAY, S et al.Applied surface science. 2014, Vol 320, pp 829-837, issn 0169-4332, 9 p.Article

Demonstration of a method to fabricate a large-area diamond single crystalPOSTHILL, J. B; MALTA, D. P; HUDSON, G. C et al.Thin solid films. 1995, Vol 271, Num 1-2, pp 39-49, issn 0040-6090Article

Selective chemical vapor deposition on excimer-laser-patterned polytetrafluoroethylene from hexafluoroacetylacetonate copper (I) vinyltrimethysilanePERRY, W. L; JAIN, A; KODAS, T. T et al.Thin solid films. 1995, Vol 262, Num 1-2, pp 7-11, issn 0040-6090Article

Numerical study of gasdynamics influence on three-dimensional transport phenomena in vertical zinc selenide LPCVD reactorGARIBIN, E. A; MIRONOV, I. A; KHORUZHNIKOV, S. E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 39, Num 1, pp 8-14, issn 0921-5107Article

Copper-based metallizationand interconnects for ultra-large-scale integration applicationsALFORD, Terry L; JIAN LI; MAYER, James W et al.Thin solid films. 1995, Vol 262, Num 1-2, issn 0040-6090, 255 p.Serial Issue

3D simulation of tungsten low pressure-chemical vapor deposition in contact holesBÄR, E; LORENZ, J.Applied surface science. 1995, Vol 91, pp 321-325, issn 0169-4332Conference Paper

Graphitic carbon coatings on fused quartz by laser-induced chemical vapor depositionKING HONG KWOK; CHIU, Wilson K. S.International heat transfer conference. 2002, pp 827-832, isbn 2-84299-308-X, 6 p.Conference Paper

Time-dependent dielectric breakdown measurements on RPECVD and thermal oxidesSILVESTRE, C; HAUSER, J. R.Thin solid films. 1996, Vol 277, Num 1-2, pp 101-114, issn 0040-6090Article

Chemical vapor deposition of TiSi2 using SiH4 and TiCl4MENDICINO, M. A; SOUTHWELL, R. P; SEEBAUER, E. G et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 473-478, issn 0040-6090Conference Paper

Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of waterJAIN, A; GELATOS, A. V; KODAS, T. T et al.Thin solid films. 1995, Vol 262, Num 1-2, pp 52-59, issn 0040-6090Article

Phosphane copper(I) complexes as CVD precursorsROTH, Nina; JAKOB, Alexander; WAECHTLER, Thomas et al.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 9089-9094, issn 0257-8972, 6 p.Conference Paper

Chemical additives for improved copper chemical vapour deposition processingNORMAN, J. A. T; ROBERTS, D. A; HOCHBERG, A. K et al.Thin solid films. 1995, Vol 262, Num 1-2, pp 46-51, issn 0040-6090Article

Optimizing the gas phase chemistry in a d.c. arcjet diamond chemical vapor deposition reactorREEVE, S. W; WEIMER, W. A.Thin solid films. 1994, Vol 253, Num 1-2, pp 103-108, issn 0040-6090Conference Paper

Deposition of highly pure ruthenium thin films with a new metal-organic precursorGATINEAU, Julien; DUSSARRAT, Christian.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 9146-9148, issn 0257-8972, 3 p.Conference Paper

Photoluminescence study of <100> textured CVD diamondsKANIA, P; OELHAFEN, P.Diamond and related materials. 1995, Vol 4, Num 4, pp 425-428, issn 0925-9635Conference Paper

Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket WMCINERNEY, E. J; MOUNTSIER, T. W; CHIN, B. L et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 734-743, issn 1071-1023Conference Paper

Piezoelectricity in aromatic polyamide thin films prepared by vapor deposition polymerizationLINFORD, M. R; IIJIMA, M; HATTORI, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 2A, pp 677-678, issn 0021-4922, 1Article

Raman study of diamond films deposited by MPCVD : effect of the substrate positionGONON, P; GHEERAERT, E; DENEUVILLE, A et al.Thin solid films. 1995, Vol 256, Num 1-2, pp 13-22, issn 0040-6090Article

Preparation of micro-coiled TiC fibers by metal impurity-activated chemical vapor depositionMOTOJIMA, S; IWANAGA, H.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 159-163, issn 0921-5107Article

Mise au point d'un système d'analyse in situ par spectrométrie de masse de la phase gazeuse pour le dépôt chimique en phase vapeur = On site gas mass spectrometer set-up for CVD reactorTHOMAS, N; BLANQUET, E.Le Vide (1995). 1995, Vol 51, Num 278, issn 1266-0167, 367, 393-408 [17 p.]Article

Cu-metal interfacial interactions during metal organic chemical vapour depositionNUESCA, G. M; KELBER, J. A.Thin solid films. 1995, Vol 262, Num 1-2, pp 224-233, issn 0040-6090Article

Investigation into the selectivity of CVD iron from Fe(CO)5 precursor on various metal and dielectric patterned substratesBAIN, M. F; LOW, Y. H; BIEN, D. C. S et al.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 8998-9002, issn 0257-8972, 5 p.Conference Paper

Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor depositionCHANG, T.-C; YEH, W.-K; CHANG, C.-Y et al.Materials chemistry and physics. 1996, Vol 44, Num 1, pp 95-99, issn 0254-0584Article

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