Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("CZOCHRALSKI METHOD")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 4288

  • Page / 172

Export

Selection :

  • and

A NEW DESIGN FOR WATER COOLED CZOCHRALSKI SEED HOLDERSINGH AJ.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 3; PP. 635-636; BIBL. 4 REF.Article

AN ELLIPSOIDAL MIRROR FURNACE FOR CZOCHRALSKI GROWTHRIVEROS HG; CORY WK; TOCA R et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 85-89; BIBL. 6 REF.Article

DISTRIBUTION OF TEMPERATURE IN SEMI-TRANSPARENT SINGLE CRYSTALS DURING THE PROCESS OF THE CZOCHRALSKI PULLING. I. THERMAL EMISSION OF SEMI-TRANSPARENT MEDIA.ZALEWSKI E; ZMIJA J.1977; ACTA PHYS. POLON., A; POLOGNE; DA. 1977; VOL. 51; NO 6; PP. 807-817; BIBL. 14 REF.Article

THE WEIGHING METHOD OF AUTOMATIC CZOCHRALSKI CRYSTAL GROWTH. II. CONTROL EQUIPMENT.BARDSLEY W; HURLE DTJ; JOYCE GC et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 40; NO 1; PP. 21-28; BIBL. 12 REF.Article

THE CZOCHRALSKI CRYSTAL GROWTH SYSTEM WITH A PERIODIC CRYSTAL GROWTH RATE AND BACK-MELTINGWHEELER AA.1982; PROC. R. SOC. LOND., SER. A, MATH. PHYS. SCI.; ISSN 0080-4630; GBR; DA. 1982; VOL. 379; NO 1777; PP. 327-343; BIBL. 2 REF.Article

CHANGES IN FLUID FLOW DURING CZOCHRALSKI GROWTH.BRICE JC; WHIFFIN PAC.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 2; PP. 245-248; BIBL. 19 REF.Article

AUTOMATISIERTE KRISTALLZIEHANLAGE FUER DAS CZOCHRALSKI-VERFAHREN. = INSTALLATION DE TIRAGE AUTOMATIQUE DE CRISTAUX POUR LE PROCEDE CZOCHRALSKIMATEIKA D; FLISIKOWSKI P; KOHLER H et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 262-274; ABS. ANGL.; BIBL. 4 REF.Article

THE BUBBLE METHOD: A TOOL FOR GROWTH MORPHOLOGY STUDIES OF THE CRYSTAL-MELT INTERFACEGRANGE G; LANDERS R; MUTAFTSCHIEV B et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 233-245; ABS. FRE; BIBL. 15 REF.Article

CZOCHRALSKI GROWTH OF CRYSTALS IN OG AND IG.WENZL H.1977; PROGR. ASTRONAUT. AERONAUT.; U.S.A.; DA. 1977; VOL. 52; PP. 437-445; BIBL. 4 REF.Article

THE WEIGHING METHOD OF AUTOMATIC CZOCHRALSKI CRYSTAL GROWTH. I. BASIC THEORY.BARDSLEY W; HURLE DTJ; JOYCE GC et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 40; NO 1; PP. 13-20; BIBL. 13 REF.Article

EFFECTS OF ROTATION ON CZOCHRALSKI CRYSTAL GROWTHRILEY N; SWEET DA.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 4; PP. 557-567; BIBL. 7 REF.Article

SIMULATIONS OF CZOCHRALSKI GROWTH ON CRYSTAL ROTATION RATE INFLUENCE IN FIXED CRUCIBLES.SHIROKI K.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 40; NO 1; PP. 129-138; BIBL. 8 REF.Article

THE CZOCHRALSKI CRYSTAL GROWTH SYSTEM WITH A PERIODIC CRYSTAL GROWTH RATE AND NO BACK-MELTINGWHEELER AA.1982; PROC. R. SOC. LOND., SER. A, MATH. PHYS. SCI.; ISSN 0080-4630; GBR; DA. 1982; VOL. 379; NO 1777; PP. 305-325; BIBL. 8 REF.Article

CROISSANCE ET ETUDE DE CA3(VO4)2BUZNYAKOVA OK; IVLEVA LI; KUZ'MINOV YU S et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 11; PP. 1875-1878; BIBL. 4 REF.Article

DISLOCATION-FREE CZOCHRALSKI GROWTH OF (110) SILICON CRYSTALSDYER LD.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 4; PP. 533-540; BIBL. 20 REF.Article

REDUCING IRIDIUM INCLUSIONS IN HIGH-TEMPERATURE CRYSTAL GROWTH.MISSEL L; YIN P; VOGEL M et al.1978; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1978; VOL. 18; NO 6; PP. 147-149; (3 P.); BIBL. 7 REF.Article

DIGITAL SIMULATION OF MAGNETIC CZOCHRALSKI FLOW UNDER VARIOUS LABORATORY CONDITIONS FOR SILICON GROWTHLANGLOIS WE; KI JUN LEE.1983; IBM JOURNAL OF RESEARCH AND DEVELOPMENT; ISSN 0018-8646; USA; DA. 1983; VOL. 27; NO 3; PP. 281-284; BIBL. 2 REF.Article

CRYSTALLIZATION RATE BEHAVIOUR UNDER CHANGE OF CZOCHRALSKI GROWTH SYSTEM PARAMETERSNALBANDYAN HG.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 7; PP. 815-819; ABS. RUS; BIBL. 8 REF.Article

A TEST OF THE BOUNDARY LAYER MODEL IN UNSTEADY CZOCHRALSKI GROWTHFAVIER JJ; WILSON LO.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 1; PP. 103-110; BIBL. 19 REF.Article

CRYSTAL PULLING USING ACRTSCHEEL HJ; MUELLER KRUMBHAAR H.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 291-296; BIBL. 17 REF.Article

OBTINEREA MONOCRISTALELOR DE SILICIU CU DENSITATE SCAZUTA DE DISLOCATII = OBTENTION DE MONOCRISTAUX DE SILICIUM A FAIBLE DENSITE DE DISLOCATIONSALOMAN A; MITROI RM.1979; REV. CHIM.; ROM; DA. 1979; VOL. 30; NO 7; PP. 645-648; BIBL. 15 REF.Article

GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS.ROZGONYI GA; PEARCE CW.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 11; PP. 747-749; BIBL. 18 REF.Article

IMPROVED VIEWING FOR CZOCHRALSKI GROWTH OF ALKALI HALIDES.CONWAY VM; HEATH M; ROYS WB et al.1976; J. PHYS. E; G.B.; DA. 1976; VOL. 9; NO 11; PP. 926-927Article

NUCLEATION OF STACKING FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON.TAN TY; WU LL; TICE WK et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 12; PP. 765-767; BIBL. 14 REF.Article

A SOLUTION FOR MELT-LEVEL CONTROL WHEN GROWING CZOCHRALSKI SILICON CRYSTALS IN HEMISPHERICAL QUARTZ CRUCIBLES.DIGGES TG JR.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 2; PP. 44-46; BIBL. 3 REF.Article

  • Page / 172