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Gate-extension overlap control by sb tilt implantation : Fundamentals and applications of advanced semiconductor devicesSHIBAHARA, Kentaro; MAEDA, Nobuhide.IEICE transactions on electronics. 2007, Vol 90, Num 5, pp 973-977, issn 0916-8524, 5 p.Article

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

A versatile sample injection system for miniaturised isotachophoresis devicesBALDOCK, S. J; FIELDEN, P. R; GODDARD, N. J et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1440-1442, issn 0167-9317, 3 p.Conference Paper

Short channel amorphous-silicon TFT's on high-temperature clear plastic substratesLONG, K; GLESKOVA, H; WAGNER, S et al.DRC : Device research conference. 2004, pp 89-90, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Supply-voltage optimization for below-70-nm technology-node MOSFETs : Special section on issues related to semiconductor manufacturing at technology nodes below 70 nmWAKABAYASHI, Hitoshi; GANESH SHANKAR SAMUDRA; DJOMEHRI, Ihsan J et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 151-156, issn 0894-6507Article

Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETsMOMIYAMA, Y; OKABE, K; NAKAO, H et al.IEDm : international electron devices meeting. 2002, pp 647-650, isbn 0-7803-7462-2, 4 p.Conference Paper

An accurate method for extracting the critical field in short channel NMOS devicesAMHOUCHE, Y; EL ABBASSI, A; RAÏS, K et al.Active and passive electronic components. 2001, Vol 24, Num 3, pp 135-140, issn 0882-7516Article

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effectsKUMAR, Anil; NAGUMO, Toshiharu; TSUTSUI, Gen et al.IEEE international SOI conference. 2004, pp 58-59, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

RF noise in a short-channel n-MOSFET: a Monte Carlo studyRENGEL, R; MATEOS, J; PARDO, D et al.Materials science forum. 2002, pp 155-158, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Investigation of the thermal noise of MOS transistors under analog and RF operating conditionsBREDERLOW, Ralf; WENIG, Georg; THEWES, Roland et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 87-90, isbn 88-900847-8-2, 4 p.Conference Paper

BSIM4.1 DC parameter extraction on 50 nm n-pMOSFETsSOUIL, D; GUEGAN, G; BERTRAND, G et al.2002 international conference on microelectronic test structures. 2002, pp 115-119, isbn 0-7803-7464-9, 5 p.Conference Paper

An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistorsBLAKEY, P. A; JOARDAR, K.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 740-742, issn 0018-9383Article

Characterization of 2D dopant profile in Leff ∼ 20 nm MOSFETs by inverse modeling with precise ∂C/∂V, ∂Vth/∂V-L measurementTANAKA, Takuji; TAGAWA, Yukio; SATOH, Shigeo et al.IEDm : international electron devices meeting. 2002, pp 887-890, isbn 0-7803-7462-2, 4 p.Conference Paper

Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETsLIME, F; ANDRIEU, F; DERIX, J et al.Solid-state electronics. 2006, Vol 50, Num 4, pp 644-649, issn 0038-1101, 6 p.Conference Paper

Bipolar mechanisms present in short channel SOI-MOSFET transistorsJANCZYK, G.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1257-1263, issn 0026-2714, 7 p.Article

Demonstration and device design consideration of Vth-controllable independent double-gate mosfet (4-terminal XMOS)MASAHARA, M; LIU, Y.-X; SAKAMOTO, K et al.Proceedings - Electrochemical Society. 2005, pp 261-272, issn 0161-6374, isbn 1-56677-461-6, 12 p.Conference Paper

Dielectrics in SI nano-devices: Roles and challengesQI XIANG; KRIVOKAPIC, Zoran; MASZARA, Witek et al.Proceedings - Electrochemical Society. 2004, pp 86-96, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETsLEE, B. H; SIM, J. H; CHOI, R et al.IEEE international reliability physics symposium. 2004, pp 691-692, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

A large signal non-quasi-static model for short-channel MOSFET'sSAILAJA, Y; PARIKH, C. D.SPIE proceedings series. 1998, pp 1048-1051, isbn 0-8194-2756-X, 2VolConference Paper

Impact of Process-Induced Strain on Coulomb Scattering Mobility in Short-Channel n-MOSFETsCHEN, William P. N; PIN SU; GOTO, K et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 768-770, issn 0741-3106, 3 p.Article

RF split capacitance-voltage measurements of short-channel and leaky MOSFET devicesSAN ANDRES, E; PANTISANO, L; RAMOS, J et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 772-774, issn 0741-3106, 3 p.Article

Experimental verification of the effect of carrier heating on channel noise in deep submicron NMOSFETs by substrate biasHONG WANG; RONG ZENG.IEEE radio frequency integrated circuits symposium. 2004, pp 599-602, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Understanding the NBTI degradation in halo-doped channel p-MOSFETsJHA, Neeraj K; RAMGOPAL RAO, V.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 311-314, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

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