Pascal and Francis Bibliographic Databases


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Results 1 to 25 of 1283

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Gate-extension overlap control by sb tilt implantation : Fundamentals and applications of advanced semiconductor devicesSHIBAHARA, Kentaro; MAEDA, Nobuhide.IEICE transactions on electronics. 2007, Vol 90, Num 5, pp 973-977, issn 0916-8524, 5 p.Article

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

Constant-current contour plot for the description of short-channel effects of MOS transistorsCHOONG-KI KIM; GOODWIN-JOHANSSON, S; DINESH SHARMA et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1619-1621, issn 0018-9383Article

Influence of drain induced barrier lowering on the dynamic conductance of short-channel MOSFETsGHIBAUDO, G; CABON, B.Electronics Letters. 1986, Vol 22, Num 19, pp 1010-1011, issn 0013-5194Article

A versatile sample injection system for miniaturised isotachophoresis devicesBALDOCK, S. J; FIELDEN, P. R; GODDARD, N. J et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1440-1442, issn 0167-9317, 3 p.Conference Paper

Effets de canal court dans les transistors FET's GaAs. Etude expérimentale, rôle d'une couche P implantée et contribution à la modélisation = Short channel effects in MESFET's GaAs. Experimental investigation, role of an implanted P-layer and contribution to the modellingZhang, Jingyan; Gourrier, Serge.1990, 145 p.Thesis


Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionHADDARA, H; CRISTOLOVEANU, S.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 378-385, issn 0018-9383Article

Normal electric field dependence of electron mobility in MOS inversion layerSHIRAHATA, M; HAMAGUCHI, C.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 1040-1044, issn 0021-4922, 1Article

Short-channel effects on MOS transistor capacitancesSHEU, B. J; KO, P. K.IEEE transactions on circuits and systems. 1986, Vol 33, Num 10, pp 1030-1032, issn 0098-4094Article

Short channel amorphous-silicon TFT's on high-temperature clear plastic substratesLONG, K; GLESKOVA, H; WAGNER, S et al.DRC : Device research conference. 2004, pp 89-90, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Supply-voltage optimization for below-70-nm technology-node MOSFETs : Special section on issues related to semiconductor manufacturing at technology nodes below 70 nmWAKABAYASHI, Hitoshi; GANESH SHANKAR SAMUDRA; DJOMEHRI, Ihsan J et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 151-156, issn 0894-6507Article

Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETsMOMIYAMA, Y; OKABE, K; NAKAO, H et al.IEDm : international electron devices meeting. 2002, pp 647-650, isbn 0-7803-7462-2, 4 p.Conference Paper

An accurate method for extracting the critical field in short channel NMOS devicesAMHOUCHE, Y; EL ABBASSI, A; RAÏS, K et al.Active and passive electronic components. 2001, Vol 24, Num 3, pp 135-140, issn 0882-7516Article

Analysis of velocity saturation and other effects on short-channel MOS transistor capacitancesIWAI, H; PINTO, M. R; RAFFERTY, C. S et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1987, Vol 6, Num 2, pp 173-184, issn 0278-0070Article

Effects of interfacial oxide layer on short-channel polycrystalline source and drain MOSFET'sMORAVVEJ-FARSHI, M. K; GREEN, M. A.IEEE electron device letters. 1987, Vol 8, Num 4, pp 165-167, issn 0741-3106Article

Steam zone growth in cylindrical channelsCLOSMANN, P. J.Society of Petroleum Engineers journal. 1984, Vol 24, Num 5, pp 481-483, issn 0197-7520Article

Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effectsKUMAR, Anil; NAGUMO, Toshiharu; TSUTSUI, Gen et al.IEEE international SOI conference. 2004, pp 58-59, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

RF noise in a short-channel n-MOSFET: a Monte Carlo studyRENGEL, R; MATEOS, J; PARDO, D et al.Materials science forum. 2002, pp 155-158, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Incompatibility of requirements for optimizing short channel behaviour and long term stability in MOSFETsBAUER, F; JAIN, S. C; KOREC, J et al.Solid-state electronics. 1988, Vol 31, Num 1, pp 27-33, issn 0038-1101Article

A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modelingPOLE-SHANG LIN; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 9, pp 1947-1956, issn 0018-9383Article

An analytical threshold voltage model of short-channel MOSFET's with implanted channelsDASGUPTA, A; LAHIRI, S. K.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 1177-1178, issn 0018-9383, 2Article

Hot carriers' effects in short channel devicesPETROVA, R; KAMBUROVA, R; VITANOV, P et al.Microelectronics and reliability. 1986, Vol 26, Num 1, pp 155-162, issn 0026-2714Article

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

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