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Results 1 to 25 of 1453

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Carrier energy based impact ionization model for n-channel MOS transistorsQUAZI DEEN MOHD KHOSRU; SYED AFJAL HOSSAIN.SPIE proceedings series. 1998, pp 1014-1017, isbn 0-8194-2756-X, 2VolConference Paper

Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistorsKUNUGI, Yoshihito; TAKIMIYA, Kazuo; TOYOSHIMA, Yuta et al.Journal of material chemistry. 2004, Vol 14, Num 9, pp 1367-1369, issn 0959-9428, 3 p.Article

Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain ExtensionsMARKOV, Stanislav; XINGSHENG WANG; MOEZI, Negin et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2385-2393, issn 0018-9383, 9 p.Article

Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFETWEIXIAO HUANG; CHOW, T. Paul; NIIYAMA, Yuki et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1018-1020, issn 0741-3106, 3 p.Article

A study of the linearity between Ion and logI offof modern MOS transistors and its application to stress engineeringLAU, W. S; PEIZHEN YANG; ENG, C. W et al.Microelectronics and reliability. 2008, Vol 48, Num 4, pp 497-503, issn 0026-2714, 7 p.Article

AC measurement for characterizing the trap processes in polysilicon TFTsFENG YAN; MIGLIORATO, Piero; SHIMODA, Tatsuya et al.SPIE proceedings series. 2003, pp 165-169, isbn 0-8194-4804-4, 5 p.Conference Paper

N-channel power MOSFET for fast neutron detectionSALAME, C; MIALHE, P; CHARLES, J.-P et al.Microelectronics international. 2002, Vol 19, Num 1, issn 1356-5362, 6, 8, 19-22 [6 p.]Article

Low-frequency noise measurements on submicrometre n-channel and p-channel MOSFETs at various operating regionsBELAHRACH, H; DEGERLI, Y; LAVERNHE, F et al.International journal of electronics. 2001, Vol 88, Num 4, pp 411-421, issn 0020-7217Article

A fringing field dependent Id-Vd model for small geometry n-MOSFETsSALEEM, R; GUPTA, R. S.SPIE proceedings series. 1998, pp 1052-1055, isbn 0-8194-2756-X, 2VolConference Paper

Simulation of electron heating in n-channel submicron Si-MOSFET'sBORZDOV, V. M; GALENCHIK, V. O; KOMAROV, F. F et al.International conference on microelectronic. 1997, pp 489-491, isbn 0-7803-3664-X, 2VolConference Paper

A 10-ns 54×54-b parallel structured full array multiplier with 0.5-μm CMOS technologyMORI, J; NAGAMATSU, M; HIRANO, M et al.IEEE journal of solid-state circuits. 1991, Vol 26, Num 4, pp 600-606, issn 0018-9200Article

A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistorsDOYLE, B. S; MISTRY, K. R.IEEE electron device letters. 1991, Vol 12, Num 4, pp 178-180, issn 0741-3106Article

Electrostatics of JFET at 6 nm channel length: a simulation studyKAPOOR, A. K.Electronics letters. 2011, Vol 47, Num 15, pp 870-871, issn 0013-5194, 2 p.Article

High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metalSAWADA, M; SUGI, A; IWAYA, M et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 173-176, isbn 4-88686-060-5, 4 p.Conference Paper

Equivalent local potentials for a coupled-channel system and the feshbach optical potentialDASKALOYANNIS, C.International journal of theoretical physics. 1992, Vol 31, Num 7, pp 1203-1215, issn 0020-7748Article

Monolithic, radiation hard charge sensitive preamplifier using diffused N-channel junction field effect transistorsRADEKA, V; RESCIA, S; MANFREDI, P. F et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 2, pp 83-88, issn 0018-9499, 1Article

N-Channel MOSFET model for the 60-300-K temperature rangeGILDENBLAT, G. S; CHENG-LIANG HUANG.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 4, pp 512-518, issn 0278-0070Article

Luminescence spectra of an n-channel metal-oxide-semiconductor field-effect transitor at breakdownDAS, N. C; ARORA, B. M.Applied physics letters. 1990, Vol 56, Num 12, pp 1152-1153, issn 0003-6951Article

Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETsBAE, Hagyoul; JANG, Jaeman; JA SUN SHIN et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 722-724, issn 0741-3106, 3 p.Article

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide : Heterostructure microelectronics with TWHM 2007SUGIURA, Shun; KISHIMOTO, Shigeru; MIZUTANI, Takashi et al.IEICE transactions on electronics. 2008, Vol 91, Num 7, pp 1001-1003, issn 0916-8524, 3 p.Article

High-performance single-crystalline-silicon TFTs on a non-alkali glass substrateSANO, Yasuyuki; TAKEI, Michiko; HARA, Akito et al.IEDm : international electron devices meeting. 2002, pp 565-568, isbn 0-7803-7462-2, 4 p.Conference Paper

Diffusion current and thermal noise in short-channel MOSFETsOBRECHTT, Michael S; MANKU, Tajinder.SPIE proceedings series. 2000, pp 229-234, isbn 0-8194-3900-2Conference Paper

Characterization of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback techniqueHORSTMANN, J. T; HILLERINGMANN, U; GOSER, K et al.Microelectronic engineering. 1996, Vol 30, Num 1-4, pp 431-434, issn 0167-9317Conference Paper

550 V, N-channel emitter switched thyristors with an atomic-lattice-layout (ALL) geometryBHALLA, A; CHOW, T. P.IEEE electron device letters. 1994, Vol 15, Num 11, pp 452-454, issn 0741-3106Article

Linear networks based on transistorsVITTOZ, E. A; ARREGUIT, X.Electronics Letters. 1993, Vol 29, Num 3, pp 297-299, issn 0013-5194Article

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