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Results 1 to 25 of 858

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Generalized gradual channel modeling of field-effect transistorsDARLING, R. B.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2302-2314, issn 0018-9383Article

Non-uniformité de la distribution spatiale des états de surface dans le canal des transistors CMOS = Non uniformity of surface state space distribution in the channel of CMOS transistorsBALLAND, B; PLOSSU, C; CHOQUET, C et al.Revue de physique appliquée. 1988, Vol 23, Num 11, pp 1837-1845, issn 0035-1687Article

An analytical model of punchthrough voltage of short-channel MOSFETs with nonuniformly doped channelsDAS GUPTA, A; LAHIRI, S. K.Solid-state electronics. 1990, Vol 33, Num 4, pp 395-400, issn 0038-1101, 6 p.Article

Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings

Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFET'sKAGA, T; SAKAI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2384-2390, issn 0018-9383Article

Accuracy of effective channel-length extraction using the capacitance methodYAO, C. T; MACK, I. A; LIN, H. C et al.IEEE electron device letters. 1986, Vol 7, Num 4, pp 268-270, issn 0741-3106Article

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on si(100)SHIBAHARA, K; SAITO, T; NISHINO, S et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 692-693, issn 0741-3106Article

The effect of channel implants on MOS transistor characterizationBOOTH, R. V; WHITE, M. H; HIN-SUM WONG et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2501-2509, issn 0018-9383Article

Improvement of Vth control for GaAs FET's by shallow-channel ion implantationKASAHARA, J; ARAI, M; WATANABE, N et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 1, pp 28-33, issn 0018-9383Article

The characteristics of emitter-collector surface leakage channels in bipolar transistorsJONES, B. K; TRUSCOTT, T.Microelectronics and reliability. 1987, Vol 27, Num 5, pp 923-931, issn 0026-2714Article

Analysis of a field-effect transistor with a channel made of ultrafine metal particlesTAMURA, H; HASUO, S.Journal of applied physics. 1987, Vol 62, Num 7, pp 3036-3041, issn 0021-8979Article

Self-formation of sub-10 nm nanogaps based on silicidationXIAOHUI TANG; FRANCIS, Laurent A; DUTU, Constantin Augustin et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 11, issn 0957-4484, 115201.1-115201.9Article

Bipolar mechanisms present in short channel SOI-MOSFET transistorsJANCZYK, G.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1257-1263, issn 0026-2714, 7 p.Article

Channel electron mobility in 4H-SiC lateral junction field effect transistorsSANNUTI, P; LI, X; YAN, F et al.Solid-state electronics. 2005, Vol 49, Num 12, pp 1900-1904, issn 0038-1101, 5 p.Article

Empirical model of effective channel length (Leff) for 0.25 μm LDD nMOSFETLIU, P. C; LIN, H.SPIE proceedings series. 2000, pp 235-242, isbn 0-8194-3900-2Conference Paper

On the extraction of the effective channel length of MOSFETsLATIF, Z; ORTIZ-CONDE, A; LIOU, J. J et al.International conference on microelectronic. 1997, pp 281-284, isbn 0-7803-3664-X, 2VolConference Paper

A review of long-channel MOS transistor modelsLUKASIAK, L; MAJKUSIAK, B; JAKUBOWSKI, A et al.Microelectronics. 1991, Vol 22, Num 2, pp 55-88, issn 0026-2692, 34 p.Article

Equivalence and accuracy of MOSFET channel length measurement techniquesSANJAY JAIN.Japanese journal of applied physics. 1989, Vol 28, Num 2, pp 160-166, issn 0021-4922, 7 p., part 1Article

Influence of the interface and of the channel volume on 1/f noise of MOS transistors biased in the linear region at strong inversionGRABOWSKI, F.Solid-state electronics. 1988, Vol 31, Num 1, pp 115-120, issn 0038-1101Article

The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effectsSKOTNICKI, T; MERCKEL, G; PEDRON, T et al.IEEE electron device letters. 1988, Vol 9, Num 3, pp 109-112, issn 0741-3106Article

Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET'sHU, G. J; CHI CHANG; YU-TAI CHIA et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2469-2475, issn 0018-9383Article

Comparison of drain structures in n-channel MOSFET'sMIKOSHIBA, H; HORIUCHI, T; HAMANO, K et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 1, pp 140-144, issn 0018-9383Article

The role of the source and drain contacts on self-heating effect in nanowire transistorsVASILESKA, D; HOSSAIN, A; RALEVA, K et al.Journal of computational electronics (Print). 2010, Vol 9, Num 3-4, pp 180-186, issn 1569-8025, 7 p.Article

Selective oxidation fin channel MOSFETs with low source/drain series resistanceCHO, Y.-K; ROH, T. M; KWON, J.-K et al.Electronics Letters. 2007, Vol 43, Num 13, pp 734-735, issn 0013-5194, 2 p.Article

Studies on the effect of channel implantation on the drain current of a grooved-gate MOSFETMAJUMDAR, B.International journal of electronics. 1996, Vol 81, Num 2, pp 137-148, issn 0020-7217Article

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