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X-ray analysis of GaAs surface reconstructions in H₂ and N₂ atmospheresKISKER, D. W; FUOSS, P. H; TOKUDA, K. L et al.Applied physics letters. 1990, Vol 56, Num 20, pp 2025-2027, issn 0003-6951Article

Ex-situ-Untersuchungen von molekularstrahl-abgeschiedenen Schichten auf Silicium-WafernGONZALES, P. P; BÜSCHEL, M; ZEHE, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1990, Vol 39, Num 1, pp 145-150, issn 0043-6925Conference Paper

An interfactant for metal oxide heteroepitaxy: Growth of dispersed ZrO₂(111) films on FeO(111) precovered Ru(0001)KETTELER, Guido; RANKE, Wolfgang; SCHLÖGL, Robert et al.PCCP. Physical chemistry chemical physics (Print). 2004, Vol 6, Num 2, pp 205-208, issn 1463-9076, 4 p.Article

On the energy and configuration of orthogonal misfit dislocations : MultilayersHIRTH, J. P.Scripta metallurgica et materialia. 1992, Vol 27, Num 6, pp 681-686, issn 0956-716XArticle

Quasi-epitaxial growth of diacetylene films by vacuum depositionKANETAKE, T; TOMIOKA, Y; IMAZEKI, S et al.Journal of applied physics. 1992, Vol 72, Num 3, pp 938-947, issn 0021-8979Article

Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEMHOLLINGER, G; GENDRY, M; DUVAULT, J. L et al.Applied surface science. 1992, Vol 56-58, pp 665-671, issn 0169-4332, bConference Paper

Surface composition of epitaxial films of gallium arsenide and related compounds after termination of their growth from the liquid phaseBOLKHOVITYANOV, YU. B; DOLBAK, A. E.Sugar technology reviews. 1990, Vol 119, Num 1, pp 139-144, issn 0081-9204Article

Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermographyBAU, Sandra; HULJIC, Dominik M; ISENBERG, Jörg et al.sans titre. 2002, pp 1335-1338, isbn 0-7803-7471-1, 4 p.Conference Paper

Positron beam defect profilling of silicon epitaxial layersSCHUT, H; VAN VEEN, A; VAN DE WALLE, G. F. A et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3003-3006, issn 0021-8979Article

Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysisCHIN-AN CHANG; LIU, J. C; ANGILELLO, J et al.Applied physics letters. 1990, Vol 57, Num 21, pp 2239-2240, issn 0003-6951Article

Photoelectrical and optical properties of Pb1-xMnxTe(Ga) epitaxial filmsNURIYEV, H. R; FARZALIYEV, S. S; FARADJEV, N. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 246-249, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 4 p.Conference Paper

Epitaxial technology of Si/CoSi₂/Si layers for solar cell applicationTSUJI, Yoshiko; NODA, Suguru; MIZUKAMI, Makoto et al.sans titre. 2002, pp 289-292, isbn 0-7803-7471-1, 4 p.Conference Paper

Photoemission study of a thin epitaxial InAs layer on InP(001)KANSKI, J; NILSSON, P. O; KARLSSON, U. O et al.Applied surface science. 1992, Vol 56-58, pp 604-609, issn 0169-4332, bConference Paper

The influence of the directed displacement of atomic planes on the X-ray diffraction rocking curvesFALEEV, N. N; FLAKS, L. I; KONNIKOV, S. G et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 327-337, issn 0031-8965Article

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin filmsSANDSTROM, R. L; GIESS, E. A; GALLAGHER, W. J et al.Applied physics letters. 1988, Vol 53, Num 19, pp 1874-1876, issn 0003-6951Article

Morphological stability of epitaxial thin elastic films by van der Waals forceZHAO, Ya-Pu.Archive of applied mechanics (1991). 2002, Vol 72, Num 1, pp 77-84, issn 0939-1533Article

Epitaxial growth of chloroaluminum and vanadyl phthalocyanine films on alkali halide single crystals by the molecular-beam-epitaxy techniqueHOSHI, H; MARUYAMA, Y.Journal of applied physics. 1991, Vol 69, Num 5, pp 3046-3052, issn 0021-8979Article

Identification of native vacancy complexes in As-grown GaAs liquid-phase epitaxial layersXIANG-ZHENG TU.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1533-1537, issn 0013-4651Article

Transfer of monocrystalline Si films for thin film solar cellsWEBER, K. J; STOCKS, M; BLAKERS, A. W et al.Growth, characterization and electronic applications of Si-based thin films. 2002, pp 183-196, isbn 81-7736-108-2, 14 p.Book Chapter

From sand to integrated circuits and optical wave-guides : An overview of not traditional applications of chemical reaction engineeringMASI, M; CARRA, S.La Chimica e l'industria (Milano). 1999, Vol 81, Num 7, pp 845-852, issn 0009-4315Article

Effect of surfactants on surface migration in Si MBESAKAMOTO, K; MIKI, K; SAKAMOTO, T et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 392-395, issn 0022-0248Conference Paper

On the shape of the in-phase TEAS oscillations during epitaxial growth of Pt(111)POELSEMA, B; BECKER, A. F; ROSENFELD, G et al.Surface science. 1992, Vol 272, Num 1-3, pp 269-275, issn 0039-6028Conference Paper

Weakly bound carbon monoxide at catalytically active sites on Cu(111)/Pd(111) thin filmsVOOK, R. W; ORAL, B.Applied surface science. 1992, Vol 60-61, pp 681-687, issn 0169-4332Conference Paper

Growth of epixtaxial TiN thin films on Si(100) by reactive magnetron sputteringCHOI, C.-H; HULTMAN, L; CHIOU, W.-A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 2, pp 221-227, issn 0734-211X, 1Article