Microscopic theory of the supercurrent through the superconductor-inversion layer-superconductor junctionTANAKA, Y; TSUKADA, M.Solid state communications. 1987, Vol 61, Num 7, pp 445-449, issn 0038-1098Article

Magnétorésistance positive forte de la couche d'inversion électronique dans le domaine de conductivité par activationSEMENCHINSKIJ, S. G.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 43, Num 10, pp 468-470, issn 0370-274XArticle

Inversion layer mobility of MOSFET's with nitrided oxide gate dielectricsSCHMIDT, M. A; TERRY, F. L. JR; MATHUR, B. P et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1627-1632, issn 0018-9383Article

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Normal electric field dependence of electron mobility in MOS inversion layerSHIRAHATA, M; HAMAGUCHI, C.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 1040-1044, issn 0021-4922, 1Article

Lateral motion of the inversion layer of MOS structures in regions of variable doping density and oxide thicknessHAWKINS, G. A; LAVINE, J. P; TRABKA, E. A et al.Solid-state electronics. 1986, Vol 29, Num 8, pp 815-823, issn 0038-1101Article

Temperature inversion buildup in Colorado's Eagle ValleyWHITEMAN, C. D.Meteorology and atmospheric physics (Print). 1986, Vol 35, Num 4, pp 220-226, issn 0177-7971Article

Acoustic inversions for measuring boundary layer suspended sediment processesTHORNE, Peter D; HURTHER, David; MOATE, Benjamin D et al.The Journal of the Acoustical Society of America. 2011, Vol 130, Num 3, pp 1188-1200, issn 0001-4966, 13 p.Article

NBTI mechanism in ultra-thin gate dielectric: Nitrogen-originated mechanism in SiONMITANI, Yuichiro; NAGAMINE, Makoto; SATAKE, Hideki et al.IEDm : international electron devices meeting. 2002, pp 509-512, isbn 0-7803-7462-2, 4 p.Conference Paper

Hopping magnetoconduction and the random structure in quasi one-dimensional inversion layersKALIA, R. K; XUE, W; LEE, P. A et al.Physical review letters. 1986, Vol 57, Num 13, pp 1615-1618, issn 0031-9007Article

Carrier transport modelling in the inversion layer of submicron semiconductor devicesSALA, C; MAGNUS, W; DE MEYER, K et al.Alta frequenza. 1990, Vol 1, Num 3, pp 313-317, issn 0002-6557Article

Optically induced inversion in the MIS solar cellABDOU, A. A; HABIB, S. E.-D.Solid-state electronics. 1986, Vol 29, Num 7, pp 751-758, issn 0038-1101Article

Image and exchange-correlation effects in double gate silicon-on-insulator transistorsGAMIZ, F; CARTUJO-CASSINELLO, P; JIMENEZ-MOLINOS, F et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 374-378, issn 0167-9317, 5 p.Conference Paper

In the beginning : Special issue on the fiftieth anniversary on the transistorBONDYOPADHYAY, P. K.Proceedings of the IEEE. 1998, Vol 86, Num 1, pp 63-77, issn 0018-9219Article

Mesospheric temperature inversions as seen by ISAMS in December 1991LEBLANC, T; HAUCHECORNE, A; CHANIN, M.-L et al.Geophysical research letters. 1995, Vol 22, Num 12, pp 1485-1488, issn 0094-8276Article

A high current gain Si metal insulator semiconductor tunnel emitter transistorYOSHIMOTO, T; SUZUKI, K.Japanese journal of applied physics. 1993, Vol 32, Num 2A, pp L180-L182, issn 0021-4922, 2Article

Turbulent dissipation of cold air lake in a basinPETKOVSEK, Z.Meteorology and atmospheric physics (Print). 1992, Vol 47, Num 2-4, pp 237-245, issn 0177-7971Article

Fluctuation surface states and conductivity of inversion layers in MIS structuresGERGEL', V. A; SHPATAKOVSKAYA, G. V; ALFERIEFF, M. E et al.Soviet physics, JETP. 1992, Vol 75, Num 2, pp 342-346, issn 0038-5646Article

Monte Carlo modeling of electron transport in a Si metal-oxide-semiconductor inversion layer including quantum state and bulk scatteringIMANAGA, S; HAYAFUJI, Y.Journal of applied physics. 1991, Vol 70, Num 3, pp 1522-1530, issn 0021-8979Article

A mathematical note on the slow diffusive character of the long-wave radiative transfer in the stable atmospheric nocturnal boundary layerGRISOGONO, B.Boundary - layer meteorology. 1990, Vol 52, Num 3, pp 221-225, issn 0006-8314Article

Macroscopic physics of the silicon inversion layerANCONA, M. G; TIERSTEN, H. F.Physical review. B, Condensed matter. 1987, Vol 35, Num 15, pp 7959-7965, issn 0163-1829Article

Magnetoconductance due to parallel magnetic fields in silicon inversion layersMENSZ, P. M; WHEELER, R. G.Physical review. B, Condensed matter. 1987, Vol 35, Num 6, pp 2844-2853, issn 0163-1829Article

Ship trailsSCORER, R. S.Atmospheric environment. 1987, Vol 21, Num 6, pp 1417-1425, issn 0004-6981Article

Interaction entre un nuage d'aérosol émettant de la chaleur et la couche d'inversion dans l'atmosphère (régime turbulent)INGEL, L. KH.Izvestiâ Akademii nauk SSSR. Fizika atmosfery i okeana. 1987, Vol 23, Num 4, pp 441-444, issn 0002-3515Article

Inversion criteria for the metal-insulator-semiconductor tunnel structuresWANG, S. J; FANG, B. C; TZENG, F. C et al.Journal of applied physics. 1986, Vol 60, Num 3, pp 1080-1086, issn 0021-8979Article