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Instabilitäten und Durchbruch von Polycid-SiO₂-Si-Strukturen = Instability, breakdown, polysilicium, silicide MOS capacityMARKGRAF, W; HOFMANN, H.-P; BEYER, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1989, Vol 31, Num 4, pp 585-594, issn 0863-0615, 10 p.Article

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Effect of low pressure corona discharge on MOS characteristicsILA PRASAD; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 5, pp 284-286, issn 0019-5596Article

Roles of corners in matching of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 467-469, issn 0098-4094, 3 p.Article

Dielectric characteristics of fluorinated ultradry SiO₂NISHIOKA, Y; OHJI, Y; MUKAI, K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1127-1129, issn 0003-6951, 3 p.Article

Matching properties of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 465-467, issn 0098-4094, 3 p.Article

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Sur le modèle théorique du régime de déséquilibre du capacitor MOS pulsé et les techniques de mesure des paramètres de génération en semiconducteurs. I = About the theoretical model of out-of-equilibrium regime of a pulsed MOS capacitor and charge carrier generation parameter measurement techniques in semiconductors. IGRADINARU, G.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 37-45, issn 0035-4066Article

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An explanation of field-enhanced non-equilibrium transients of pulsed MOS capacitorsXIUMIAO ZHANG.Semiconductor science and technology. 1993, Vol 8, Num 4, pp 555-559, issn 0268-1242Article

Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electronsWALLACE WAN-LI LIN; CHICH-TANG SAH.Journal of applied physics. 1988, Vol 64, Num 4, pp 1950-1956, issn 0021-8979Article

Temperature dependence of the hard breakdown current of MOS capacitorsAVELLAN, Alejandro; MIRANDA, Enrique; SELL, Ben et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 463-466, isbn 88-900847-8-2, 4 p.Conference Paper

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Determining the generation lifetime in a MOS capacitor using linear sweep techniquesTAPAJNA, Milan; HARMATHA, Ladislav.Solid-state electronics. 2004, Vol 48, Num 12, pp 2339-2342, issn 0038-1101, 4 p.Article

Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materialsJACOB, A. P; MYRBERE, T; YOUSIF, M. Y. A et al.SPIE proceedings series. 2002, pp 668-671, isbn 0-8194-4500-2, 2VolConference Paper

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