Impregnation thermodynamics of barrier-layer capacitorsSUNDARAM, S. K.Thermochimica acta. 1988, Vol 131, pp 247-255, issn 0040-6031Article

Calculation of the leading corrections to the capacitor capacitance between two conductors separated by a small gapSEMAKHIN, A. N; SHNEERSON, G. A.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1115-1119, issn 0038-5662Article

Capacitance measurement applied to a pneumatic conveyor with very low solids loadingBECK, M. S; GREEN, R. G; PLASKOWSKI, A. B et al.Measurement science & technology (Print). 1990, Vol 1, Num 7, pp 561-564, issn 0957-0233Article

A novel digital capacitance meterTAHA, S. M. R.International journal of electronics. 1989, Vol 66, Num 2, pp 317-320, issn 0020-7217, 4 p.Article

Modeling of plasma-induced self-healing in organic dielectricsKAMMERMAIER, J; RITTMAYER, G; BIRKLE, S et al.Journal of applied physics. 1989, Vol 66, Num 4, pp 1594-1609, issn 0021-8979, 16 p.Article

The evolution of high permittivity multilayer capacitorsHERBERT, J. M.Ferroelectrics (Print). 1988, Vol 87, pp 347-351, issn 0015-0193Article

New Calibration Methods for Accurate Electrical Capacitance Tomography Measurements in Particulate-Fluid SystemsHADI, Bashar; BERRUTI, Franco; BRIENS, Cedric et al.Industrial & engineering chemistry research. 2009, Vol 48, Num 1, pp 274-280, issn 0888-5885, 7 p.Article

Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAM'sHIERGEIST, P; SPITZER, A; RÖHL, S et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 913-919, issn 0018-9383, 7 p.Article

Theory of the junction capacitance of an abrupt diodeVAN MIEGHEM, P; MERTENS, R. P; VAN OVERSTRAETEN, R. J et al.Journal of applied physics. 1990, Vol 67, Num 9, pp 4203-4211, issn 0021-8979, 1Article

Capacitance sensing drop counterKIRKBY, D. R; HILLSON, P. J; MOSSE, C. A et al.Journal of biomedical engineering. 1989, Vol 11, Num 2, pp 166-169, issn 0141-5425, 4 p.Article

A new transmission line of round conductor and parallel plane with symmetrically placed slitWEIGAN LIN.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 8, pp 739-740, issn 0018-9480Article

Effect of radiation induced defects on the capacitance of silicon detectorsDARVAS, R; MUDRIK, M; SEIDMAN, A et al.Journal of applied physics. 1992, Vol 71, Num 3, pp 1517-1521, issn 0021-8979Article

Static fringing capacitance of a dielectric loaded coaxial terminationMAHONY, J. D.IEE proceedings. Part A. Physical science, Measurements and instrumentation, Management and education, Reviews. 1988, Vol 135, Num 7, pp 448-450, issn 0143-702XArticle

Effects of reverse bias failure on surface mounted tantalum capacitorsLINAM, S. D.Microelectronics. 1986, Vol 17, Num 4, pp 49-53, issn 0026-2692Article

New long-firing materials for multilayer capacitorsYONEZAWA, M.Ferroelectrics (Print). 1986, Vol 68, Num 1-2-3-4, pp 181-189, issn 0015-0193Article

Influences of cube texture on etched foil capacitanceKUANG, F; LI, X. F; HONG, T et al.Materials and corrosion (1995). 2012, Vol 63, Num 8, pp 739-743, issn 0947-5117, 5 p.Article

Capacitance hydrophones for pressure determination in lithotripsyFILIPCZYNSKI, L; ETIENNE, J.Ultrasound in medicine & biology. 1990, Vol 16, Num 2, pp 157-165, issn 0301-5629Article

Implantation-enhanced oxidation of tantalum for capacitor structuresMOHAMMED, M. A; MORGAN, D. V; NOBES, M et al.Electronics Letters. 1989, Vol 25, Num 5, pp 329-330, issn 0013-5194, 2 p.Article

Modeling the non-quasi-static metal-semiconductor space-charge-region capacitanceLIOU, J. J; MALOCHA, D. C.Journal of applied physics. 1989, Vol 65, Num 4, pp 1782-1787, issn 0021-8979, 6 p.Article

Three-dimensional capacitance evaluation on a connection machineGUERRIERI, R; SANGIOVANNI-VINCENTELLI, A.IEEE transactions on computer-aided design of integrated circuits and systems. 1988, Vol 7, Num 11, pp 1125-1133, issn 0278-0070Article

Improved approximations for the fringing and shielded slab-line capacitancesRIBLET, H. J.IEEE transactions on microwave theory and techniques. 1986, Vol 34, Num 11, pp 1125-1130, issn 0018-9480Article

Oxidation of multiwalled carbon nanotubes by air: benefits for electric double layer capacitorsCHENSHA LI; DAZHI WANG; TONGXIANG LIANG et al.Powder technology. 2004, Vol 142, Num 2-3, pp 175-179, issn 0032-5910, 5 p.Article

Improvement of non-linear sensitivity of a capacitive type accelerometer using compensationSANTOSO, Agus; MAJLIS, Yeop.Symposium on Design, Test, Integration and Packaging of MWMS/MOEMS. 2004, pp 143-148, isbn 2-84813-026-1, 6 p.Conference Paper

A three-transistor threshold voltage model for halo processesRIOS, Rafael; SHIH, Wei-Kai; SHAH, Atul et al.IEDm : international electron devices meeting. 2002, pp 113-116, isbn 0-7803-7462-2, 4 p.Conference Paper

Anomalous capacitance-voltage behavior due to dopant segregation and carrier trapping in As-implanted polycrystalline silicon and silicided polycrystalline silicon gatesPARK, K; BATRA, S; LIN, J et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2325-2327, issn 0003-6951Article