Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageMONDERER, B; LAKHANI, A. A.Solid-state electronics. 1985, Vol 28, Num 5, pp 447-451, issn 0038-1101Article

Dynamic quantization of current with a doubled electron chargeMOLOTKOV, S. N; NAZIN, S. S.JETP letters. 1993, Vol 58, Num 4, pp 279-283, issn 0021-3640Article

A simple method of modelling the C-V profiles of high-low junctions and heterojunctionsMISSOUS, M; RHODERICK, E. H.Solid-state electronics. 1985, Vol 28, Num 3, pp 233-237, issn 0038-1101Article

Capacitance-voltage measurements of Au-Ge-Sn structure at liquid nitrogen temperatureSERIN, N.Journal of Technical Physics. 1983, Vol 24, Num 1, pp 121-125, issn 0324-8313Article

Caractéristiques capacité-tension sous-linéaires des jonctions p-n abruptes asymétriquesKONSTANTINOV, O. V; MEZRIN, O. A; EGOROV, B. V et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 9, pp 1589-1596, issn 0015-3222Article

Determinatoni of capture rates from non-equilibrium quasistatic C-U characteristics of MIS capacitorsBARTOS, J.Physica status solidi. A. Applied research. 1994, Vol 141, Num 1, pp 163-173, issn 0031-8965Article

Numerical solution of Poisson's equation with application to C-V analysis of III-V heterojunction capacitorsGRAY, J. L; LUNDSTROM, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 2102-2109, issn 0018-9383Article

Simple formulas for analysis of C-V characteristics of MIS capacitorJAKUBOWSKI, A; INIEWSKI, K.Solid-state electronics. 1983, Vol 26, Num 8, pp 755-756, issn 0038-1101Article

Capacité négative d'un semiconducteur photosensibleALIMPIEV, V. N; GURAL'NIK, I. P.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 676-679, issn 0015-3222Article

Effect of semiconductor thickness on capacitance-voltage characteristics of an MOS capacitorNAGAI, K; HAYASHI, Y.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1659-1660, issn 0021-4922Article

Influence of pd layer on the sensitivity of CH_x/PS/Si as structure for H₂ sensingGABOUZE, N; CHERAGA, H; BELHOUSSE, S et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 5, pp 1412-1416, issn 1862-6300, 5 p.Conference Paper

Investigation of electrical and photovoltaic behaviour of furfural resin thin film devicesSHARMA, G. D; ROY, M. S; GUPTA, S. K et al.Physica status solidi. A. Applied research. 1996, Vol 158, Num 2, pp 599-610, issn 0031-8965Article

Capacitance-voltage characteristics of GaAs-AlAs heterostructuresWOODWARD, T. K; SCHLESINGER, T. E; MCGILL, T. C et al.Applied physics letters. 1985, Vol 47, Num 6, pp 631-633, issn 0003-6951Article

Double-resonance technique for C/V measurements of semiconductor devicesDE COGAN, D; ALANI, A.Electronics Letters. 1985, Vol 21, Num 24, pp 1153-1154, issn 0013-5194Article

Determination of impurity distribution in p-type Si epitaxial layers by C-V analysis of Sm on p-type Si Schottky diodesMIKI, K; YOSHIDA, N.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L336-L338, issn 0021-4922, 2Article

Effect of AC and DC voltage on dielectric properties of CeO₂ filmsCHANDRA SHEKAR, M; HARI BABU, V.Crystal research and technology (1979). 1984, Vol 19, Num 12, pp 1649-1653, issn 0232-1300Article

Effects of leakage current on deep level transient spectroscopyCHEN, M. C; LANG, D. V; DAUTREMONT-SMITH, W. C et al.Applied physics letters. 1984, Vol 44, Num 8, pp 790-792, issn 0003-6951Article

Effect of relative humidity on current-voltage characteristics of Li-doped C uO/ZnO junctionTOYOSHIMA, Y; MIYAYAMA, M; YANAGIDA, H et al.Japanese journal of applied physics. 1983, Vol 22, Num 12, issn 0021-4922, 1933Article

Low-intensity differential photocapacitance of MOS structuresMOHAN CHANDRA, M; SURYAN, G.Solid-state electronics. 1983, Vol 26, Num 8, pp 731-737, issn 0038-1101Article

Sensing of λDNA solutions by metal-gap-semiconductor devicesHIROKANE, Takaaki; KANZAKI, Daisuke; HASHIMOTO, Hideaki et al.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 1131-1133, issn 0142-2421, 3 p.Conference Paper

Nanometer-scale characterization of lateral p-n⁺ junction by scanning capacitance microscopeTOMIYE, H; YAO, T.Applied surface science. 2000, Vol 159-60, pp 210-219, issn 0169-4332Conference Paper

Interface engineering with pseudormorphic interlayers : Ge metal-insulator-semiconductor structuresHATTANGADY, S. V; FOUNTAIN, G. G; RUDDER, R. A et al.Applied physics letters. 1990, Vol 57, Num 6, pp 581-583, issn 0003-6951Article

Electrical characteristics of Al/ZnS/p-n⁺Si diode structures for electroluminescent devicesREEHAL, H. S; THOMAS, C. B.Solid-state electronics. 1986, Vol 29, Num 4, pp 429-436, issn 0038-1101Article

In-depth profiling of sputter-induced space-charge compensation in p-silicon Schottky barriersHELLINGS, G. J. A; STRAAYER, A; KIPPERMAN, A. H. M et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2067-2071, issn 0021-8979Article

MOS capacitors on cadmium tellurideTALASEK, R. T; SYLLAIOS, A. J.Journal of the Electrochemical Society. 1985, Vol 132, Num 4, pp 887-889, issn 0013-4651Article