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Improved feedback charge method for quasistatic CV measurements in semiconductorsMEGO, T. J.Review of scientific instruments. 1986, Vol 57, Num 11, pp 2798-2805, issn 0034-6748Article

Thermionic gap with a p semiconductorKAZACHKOVSKII, O. D.Atomic energy (New York, N.Y.). 2005, Vol 98, Num 3, pp 202-206, issn 1063-4258, 5 p.Article

Comparison of the temperature coefficients of the basic I-V parameters for various types of solar cellsOSTERWALD, C. R; GLATFELDER, T; BURDICK, J et al.Photovoltaic specialists conference. 19. 1987, pp 188-193Conference Paper

Conduction mechanisms in Pd/SiO2/nSi Schottky diode hydrogen detectorsPETTY, M. C.Solid-state electronics. 1986, Vol 29, Num 1, pp 89-97, issn 0038-1101Article

NbN/TaNx/NbN SNS Josephson junctions by pulsed laser depositionKAUL, Anupama B; VAN DUZER, Theodore.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 88-91, issn 1051-8223, 1Conference Paper

Monitoring current-voltage characteristics of photovoltaic modulesVAN DYK, E. E; GXASHEKA, A. R; MEYER, E. L et al.sans titre. 2002, pp 1516-1519, isbn 0-7803-7471-1, 4 p.Conference Paper

Properties of a T-shaped quantum interference 'transistor' as an electronic deviceNIKOLIC, K; SORDAN, R.International conference on microelectronic. 1997, pp 335-338, isbn 0-7803-3664-X, 2VolConference Paper

Microwave radiation control of semiconductor structures with tunnel-thin P-N-transitionsUSANOV, D. A; SKRIPAL, A. V.International conference on microelectronic. 1997, pp 249-251, isbn 0-7803-3664-X, 2VolConference Paper

Role of space charge in memory-type organic photoreceptor coated on an organic polymer electrodeNAKAZAWA, Y; HOSHINO, K; HANNA, J.-I et al.Japanese journal of applied physics. 1991, Vol 30, Num 5, pp 1002-1007, issn 0021-4922, 1Article

Verification of the Aharonov-Bohm effect in superconductors by use of a toroidal flux geometry = Vérification de l'effet Aharonov-Bohm dans les supraconducteurs par l'utilisation d'une géométrie de flux toroïdaleWALKER, I. R.Physical review. B, Condensed matter. 1986, Vol 33, Num 7, pp 5028-5029, issn 0163-1829Article

LIMITING THERMIONIC ENERGY CONVERSION CHARACTERISTICSZHEREBTSOV, V. A; KASIKOV, I. I.Atomic energy (New York, N.Y.). 2011, Vol 110, Num 1, pp 14-20, issn 1063-4258, 7 p.Article

Force dependence of RF mems switch contact heatingJENSEN, B. D; CHOW, L. W; WEBBINK, R. F et al.IEEE International Conference on Micro Electro Mechanical Systems. 2004, pp 137-140, isbn 0-7803-8265-X, 1Vol, 4 p.Conference Paper

Current-voltage characteristics from an asymptotic analysis of the MOSFET equationsCUMBERBATCH, Ellis; ABEBE, Henok; MORRIS, Hedley et al.Journal of engineering mathematics. 2001, Vol 39, Num 1-4, pp 25-46, issn 0022-0833Article

Messmethoden zur Bestimmung der Blindleistung nach Budeanu bei verzerrten Strom- und Spannungskurven = Une méthode de mesure de la puissance réactive d'après les caractéristiques de tension et de courant = A method for measuring reactive power from voltage- and current curvesSAWICKI, J.Archiv für Elektrotechnik (Berlin). 1986, Vol 69, Num 4, pp 227-238, issn 0003-9039Article

Properties of heterojunctions based on CdSGREMENOK, V. F; KOREN, N. N; KINDYAK, V. V et al.Physica status solidi. A. Applied research. 1986, Vol 97, Num 2, pp K205-K209, issn 0031-8965Article

Cross-correlated dynamic resistance of a direct current superconducting quantum interference devicePOLUSHKIN, V; GLOWACKA, D; HART, R et al.Journal of low temperature physics. 2000, Vol 118, Num 1-2, pp 105-111, issn 0022-2291Article

Potential profile of dielectrics during high-voltage pulse applicationDERVOS, C; BOURKAS, P. D; KAYAFAS, E. A et al.Physica status solidi. A. Applied research. 1989, Vol 112, Num 1, pp 123-130, issn 0031-8965Article

GaAs vertical JFET operated in bipolar mode (GaAs BMFET)SCHWEEGER, G; COCORRULLO, G; DELLA CORTE, F. G et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1097-1098, issn 0013-5194, 2 p.Article

Perovskite solid electrolytes for intermediate temperature solid oxide fuel cellsCOOK, R. L; MACDUFF, R. C; SAMMELLS, A. F et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 10, pp 3309-3310, issn 0013-4651, 2 p.Article

An advanced 0.5-μm CMOS disposable TiN LDD/salicide spacer processPFIESTER, J. R; PARRILLO, L. C; WOO, M et al.IEEE electron device letters. 1990, Vol 11, Num 7, pp 318-320, issn 0741-3106, 3 p.Article

Organic solar cells characterized by dark lock-in thermographyBACHMANN, Jonas; BUERHOP-LUTZ, Claudia; DEIBEL, Carsten et al.Solar energy materials and solar cells. 2010, Vol 94, Num 4, pp 642-647, issn 0927-0248, 6 p.Conference Paper

Novel emission degradation behavior of patterned carbon nanotubes by field emissionKIM, Do-Hyung; YANG, Hee-Sun; KANG, Hee-Dong et al.Chemical physics letters. 2003, Vol 368, Num 3-4, pp 439-444, issn 0009-2614, 6 p.Article

Non-linear current-voltage characteristics of graphite/piezoelectric compositeOTA, Toshitaka; YAMAUCHI, Naoto; DAIMON, Keiji et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2002, Vol 110, Num 4, pp 310-313, issn 0914-5400Article

Novel PV array/module I-V curve simulator circuitNAGAYOSHI, Hiroshi; ORIO, Shinji; KONO, Yuji et al.sans titre. 2002, pp 1535-1538, isbn 0-7803-7471-1, 4 p.Conference Paper

Temperature dependence of the hard breakdown current of MOS capacitorsAVELLAN, Alejandro; MIRANDA, Enrique; SELL, Ben et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 463-466, isbn 88-900847-8-2, 4 p.Conference Paper

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