Electron density dynamics in semiconductor lasers under relatively strong dual optical injectionAL-HOSINY, Najm M.Optics communications. 2008, Vol 281, Num 17, pp 4488-4492, issn 0030-4018, 5 p.Article

A Charge Parity AmmeterLAMBERT, Nicholas J; EDWARDS, Megan; CICCARELLI, Chiara et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1148-1152, issn 1530-6984, 5 p.Article

Low-energy spectrum of one-dimensional generalized Wigner latticeSLAVIN, V.Physica status solidi. B. Basic research. 2005, Vol 242, Num 10, pp 2033-2040, issn 0370-1972, 8 p.Article

Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopyYULEI SHI; ZHOU, Qing-Li; CUNLIN ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7385, issn 0277-786X, isbn 978-0-8194-7666-1 0-8194-7666-8, 73850B.1-73850B.6Conference Paper

Band structure and dielectric function of TlInTe₂WAKITA, K; SHIM, Y; ORUDZHEV, G et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 11, pp 2841-2844, issn 1862-6300, 4 p.Conference Paper

Carrier density saturation in a Ga_0.25In_0.75As/InP heterostructureMARTIN, T. P; MARLOW, C. A; SAMUELSON, L et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1754-1756, issn 1386-9477, 3 p.Conference Paper

Unified carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors covering SWIR, MWIR and LWIR bandsGUPTA, Sudha; BHAN, R. K; DHAR, V et al.Infrared physics & technology. 2008, Vol 51, Num 3, pp 259-262, issn 1350-4495, 4 p.Article

Nonlinear Gain in Semiconductor Ring LasersBORN, Chris; GUOHUI YUAN; ZHUORAN WANG et al.IEEE journal of quantum electronics. 2008, Vol 44, Num 11-12, pp 1055-1064, issn 0018-9197, 10 p.Article

Improved scaling rules for bandgaps in graphene nanomeshsGUIPING TANG; ZHENHUA ZHANG; XIAOQING DENG et al.Carbon (New York, NY). 2014, Vol 76, pp 348-356, issn 0008-6223, 9 p.Article

Formation of Carbonic Cluster Ions at the Ionization of Fullerenes and Multiatomic Molecules of HydrocarbonsAFROSIMOV, V. V; BASALAEV, A. A; PANOV, M. N et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2010, Vol 18, Num 1-6, pp 441-445, issn 1536-383X, 5 p.Conference Paper

The theoretical research of the carriers distribution in the semiconductor quantum dotZHAO, C; ZHAO, M; WANG, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7844, issn 0277-786X, isbn 978-0-8194-8374-4, 78441G.1-78441G.5Conference Paper

Carrier density depinning above threshold in semiconductor lasers : effects of carrier heating and spectral hole burningTSAI, C.-YI; TSAI, C.-YAO.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 4, pp 209-212, issn 1350-2433Article

Inadaptation des diagrammes d'Arrhenius, comme méthode de détermination graphique des états localisés = Inadequacy of Arrhenius plots as a graphical method for determination of localized statesONGARO, R; PILLONNET, A; MOHAMMED GAROUM et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 1, pp 129-137, issn 0022-3727Article

Calculations of electrical resistivity produced by dislocations and grain boundaries in metalsKAROLIK, A. S; LUHVICH, A. A.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 4, pp 873-886, issn 0953-8984Article

Simultaneous determination of surface potential and excess carrier concentration with the pulsed surface photovoltage methodDITTRICH, T; BRAUER, M; ELSTNER, L et al.Physica status solidi. A. Applied research. 1993, Vol 137, Num 1, pp K29-K32, issn 0031-8965Article

Interband quantum kinetics with LO-phonon scattering in a laser-pulse-excited semicondutor. I: TheoryHAUG, H.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 139-148, issn 0370-1972Conference Paper

Electromechanical Sensing of Substrate Charge Hidden under Atomic 2D CrystalsKAY, Nicholas D; ROBINSON, Benjamin J; FAL'KO, Vladimir I et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3400-3404, issn 1530-6984, 5 p.Article

Terahertz absorption by resonant plasmon excitations in grating-gated quantum wellsBARRICK, T. A; WANKE, M. C; FORTIER, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7215, issn 0277-786X, isbn 978-0-8194-7461-2 0-8194-7461-4, 1Vol, 721509.1-721509.7Conference Paper

The effects of trigger light pulses on the response speed of semi-insulating GaAs photoconductive switchesDAI, Hui-Ying; LI, Hong-Bo; XU, Jie et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7279, issn 0277-786X, isbn 978-0-8194-7538-1, 727916.1-727916.9Conference Paper

Zitterbewegung, chirality, and minimal conductivity in grapheneKATSNELSON, M. I.The European physical journal. B, Condensed matter physics. 2006, Vol 51, Num 2, pp 157-160, issn 1434-6028, 4 p.Article

Polarization dependent size of Ge nanoparticle formed by ultrafast laserMIN AH SEO; DAI SIK KIM; HYUN SUN KIM et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61290F.1-61290F.8, issn 0277-786X, isbn 0-8194-6171-7, 1VolConference Paper

Orbital ordering and valence states in (La_1+xCa_1-x)CoRuO₆ double perovskitesBOS, Jan-Willem G; ATTFIELD, J. Paul; CHAN, Ting-Shan et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014101.1-014101.5, issn 1098-0121Article

Magnetostriction and magnetotransport in bismuthMICHENAUD, J.-P; LENOIR, B; BELLOUARD, C et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 18, pp 184418.1-184418.4, issn 1098-0121Article

Whether is it possible to produce high concentrations of carriers in a semiconductor for observing the Bose condensate at room temperature?ORAEVSKY, A. N.Quantum electronics (Woodbury). 2003, Vol 33, Num 5, pp 377-379, issn 1063-7818, 3 p.Article

Charge carrier concentration and mobility of ions in a silica glassTOMOZAWA, M; SHIN, D.-W.Journal of non-crystalline solids. 1998, Vol 241, Num 2-3, pp 140-148, issn 0022-3093Article