Performance characteristics of a new high rate magnetron sputtering cathode = Performances d'une nouvelle cathode de pulvérisation à haute puissance à magnétronCLASS, W. H.Thin solid films. 1983, Vol 107, Num 4, pp 379-385, issn 0040-6090Article

Ion sputtering targets electrolytically prepared = Cibles de pulvérisation par ions préparées électrolytiquementJOKIC, T; GONCIC, B.Applied surface science. 1986, Vol 25, Num 1-2, pp 213-216, issn 0169-4332Article

Planarization by radio-frequency bias sputtering of aluminum as studied experimentally and by computer simulation = Aplanissement par pulvérisation haute fréquence de l'aluminium, étudié expérimentalement et par simulation sur ordinateurBADER, H. P; LARDON, M. A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 6, pp 2167-2171, issn 0734-2101Article

Macroparticle contamination in cathodic arc coatings: generation, transport and controlBOXMAN, R. L; GOLDSMITH, S.Surface & coatings technology. 1992, Vol 52, Num 1, pp 39-50, issn 0257-8972Conference Paper

A model for atomic mixing and preferential sputtering effects in SIMS depth profilingKING, B. V; TSONG, I. S. T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1443-1447, issn 0734-2101Article

Composition of magnetron-sputtered aluminum alloy filmsLIU, D. R; NORIAN, K. H.Thin solid films. 1989, Vol 173, Num 1, pp L115-L118, issn 0040-6090Article

An investigation of the sputtering process in the microwave-coupled hollow cathode discharge = Une étude du processus de pulvérisation dans la décharge d'une cathode creuse couplée microondeVIOLANTE, N; SENOFONTE, O; MARCONI, A et al.Canadian journal of spectroscopy. 1988, Vol 33, Num 2, pp 49-55, issn 0045-5105Article

Effect of segregation on preferred sputtering of alloys = Influence de la ségrégation sur la pulvérisation sélective des alliagesITOH, N; MORITA, K.Radiation effects. 1984, Vol 80, Num 3-4, pp 163-182, issn 0033-7579Article

An empirical formula for angular dependence of sputtering yields = Formule empirique pour les rendements de pulvérisation en fonction de l'angle d'incidenceYAMAMURA, Y.Radiation effects. 1984, Vol 8, Num 1-2, pp 57-72, issn 0033-7579Article

PHYSICAL PROPERTIES OF SPUTTERED CHALCOGENIDE FILMS WITH A VARIABLE CONTENT OF FEBORNSTEIN A; LEWIN I; LEREAH Y et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 866-868; BIBL. 18 REF.Article

PREFERENTIAL SPUTTERING OF BINARY COMPOUNDS: A MODEL STUDYGARRISON BJ.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 114; NO 1; PP. 23-37; BIBL. 22 REF.Article

DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERSJASTRZEBSKI L; LAGOWSKI J.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1957-1963; BIBL. 21 REF.Article

DC MAGNETRON SYSTEM FOR CATHODE SPUTTERING.KIROV KI; IVANOV NA; ATANASOVA ED et al.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 6; PP. 237-241; BIBL. 16 REF.Article

MICROPROCESSOR AUTOMATED SPUTTERING.HUTT M.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 12; PP. 74-76Article

RF SPUTTERING OF YTTRIA ON INDIUM TIN OXIDE SUBSTRATESPANICKER MPR; ESSINGER WF.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1943-1947; BIBL. 9 REF.Article

DEPTH RESOLUTION IN SPUTTER PROFILING: EVIDENCE AGAINST THE SEQUENTIAL LAYER SPUTTERING MODELWITTMAACK K; SCHULZ F.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 2; PP. 259-270; BIBL. 21 REF.Article

NOTE ON THE TIME CONSTANT FOR PREFERENTIAL BINARY SPUTTERINGCOLLINS R.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 111-116; BIBL. 1 REF.Article

CALCUL DE LA PULVERISATION D'APRES LE MODELE DES FOCUSONSKUVAKIN MV; KHARLAMOCHKIN ES; YURASOVA VE et al.1978; FIZ. TVERD. TELA; SUN; DA. 1978; VOL. 20; NO 7; PP. 2055-2061; BIBL. 18 REF.Article

SYSTEMES A MAGNETRON POUR LA PULVERISATION IONIQUE DES MATERIAUXDANILIN BS; SYRCHIN VK.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 4; PP. 7-18; BIBL. 82 REF.Article

Quelques mécanismes de la destruction d'une électrode en cuivre dans un canal MHDBEJLIS, I. P.Teplofizika vysokih temperatur. 1985, Vol 23, Num 3, pp 577-585, issn 0040-3644Article

Particle densities in high current hollow cathode dischargesKOCH, H; EICHLER, H. J.Journal of applied physics. 1983, Vol 54, Num 9, pp 4939-4946, issn 0021-8979Article

Polyurethane coating systems for cathodic electrodepositionRAMASRI, M; SRINIVASA RAO, G. S; SAMPATHKUMARAN, P. S et al.JCT, Journal of coatings technology. 1989, Vol 61, Num 777, pp 129-134, issn 0361-8773, 6 p.Article

INTERFACE COMPOSITION STUDIES OF THERMALLY OXIDIZED GAAS USING AUGER DEPTH PROFILINGXUN WANG; REYES MENA A; LICHTMAN D et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 851-854; BIBL. 13 REF.Article

INVESTIGATION OF RF SPUTTER-ETCHED SI SURFACE BY SPECTROSCOPIC ELLIPSOMETRYOHIRA F; ITAKURA M.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 398-399; BIBL. 11 REF.Article

SPUTTERING OF SI WITH KEV AR⁺ IONS. I: MEASUREMENT AND MONTE CARLO CALCULATIONS OF SPUTTERING YIELDSUK TAI KANG; SHIMIZU R; OKUTANI T et al.1979; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1979; VOL. 18; NO 9; PP. 1717-1725; BIBL. 33 REF.Article